CA1134059A - Method of providing an epitaxial layer - Google Patents
Method of providing an epitaxial layerInfo
- Publication number
- CA1134059A CA1134059A CA325,479A CA325479A CA1134059A CA 1134059 A CA1134059 A CA 1134059A CA 325479 A CA325479 A CA 325479A CA 1134059 A CA1134059 A CA 1134059A
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- susceptor
- layer
- epitaxial layer
- during
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 7
- 239000007792 gaseous phase Substances 0.000 claims abstract description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Abstract
21.2.79 PHN 9108 ABSTRACT:
Method of providing an epitaxial layer.
A method of providing an epitaxial layer from a gaseous phase on a substrate, in which a susceptor via which the substrate is heated is provided with a layer of the same material as that of which the sub-strate consists, on which layer the substrate is pro-vided, after which an etchant is passed over the sub-strate so that the side of the substrate remote from the susceptor is etched and chemical transport of the said material takes place from the susceptor to the side of the substrate facing the susceptor, and the epitaxial layer is then deposited on the side of the substrate re-mote from the susceptor, characterized in that the passing-over of the etchant is carried out in two steps, between which two steps an epitaxial growth step is in-troduced, and that during the second etching step the material deposited on the side of the substrate remote from the susceptor during the said growth step is re-moved partly and the material obtained by chemical transport on the side of the substrate facing the susceptor reaches a desired thickness.
Method of providing an epitaxial layer.
A method of providing an epitaxial layer from a gaseous phase on a substrate, in which a susceptor via which the substrate is heated is provided with a layer of the same material as that of which the sub-strate consists, on which layer the substrate is pro-vided, after which an etchant is passed over the sub-strate so that the side of the substrate remote from the susceptor is etched and chemical transport of the said material takes place from the susceptor to the side of the substrate facing the susceptor, and the epitaxial layer is then deposited on the side of the substrate re-mote from the susceptor, characterized in that the passing-over of the etchant is carried out in two steps, between which two steps an epitaxial growth step is in-troduced, and that during the second etching step the material deposited on the side of the substrate remote from the susceptor during the said growth step is re-moved partly and the material obtained by chemical transport on the side of the substrate facing the susceptor reaches a desired thickness.
Description
~34~
21.2.79 1 P~IN 9108 Method of providing an epitaxial la~er.
The invention relates to a method of providing an epitaxial laycr from a gaseous phase on a substrate, in which a susceptor ia which the substrate is heated is provided with a layer of tho same ma-terial as that of which the substrate consists, on which layer the sub-strate is provided, aft~r which an etchant is passed over the subs-trate so that the side of the substrate remote from the susceptor is etched and chemical -trans-port of the said material takes place from the susceptor to the side of the substrate facing the susceptor, and the epitaxial layer is then deposited on the side of thc substrate~remote from the susceptor.
~ method of the kind mentioned in the preamble is known ~rom J. Electrochem. Soc. Vol. 122, 15 1705 - 1709 (1975).
When depositing an epitaxial layer of semi-conductor material on a substrate of semiconductor material comprising a volatile dopant, atoms of said dopant may diffuse out of the subs-trate and land in the gaseous phase. During the deposition said atoms are in-corporated in the epitaxial layer and influence the resistance of the layer This phenomenon is known as the au-todope effect.
In order to prevent this effec-t, special measures have t-o be taken when depositing an epitaxial ~' ~
. , . .... ,. . ~ . .. .. ,. . ..... , .. , . ... ~ .. , . ,, .. _.. ......... . ...... ... ........ . ...
. ~ .
~L3~
21.2.79 ~ ~ PI~ 9~08 layer on a substrate comprising a volatile dopant.
For example, a method is used in which the substrate consisting, for example, of silicon is provid-ed, prior to the epi-taxial deposition~ on the side not to be covered by epitaxy with a layer masking against out-diffusion, for example~ of silicon dioxide or silicon nitride. This is a rather cumbersome method in which moreover the possibility exists that crystal defects are introduced.
The method mentioned in the preamble yields reproducible results only if an epi-taxial layer is de~
posited the resistivity of which need not exceed 10 to 15~2 cm.
One of the objects of the invention is to pro-vide a si.mple and reliable method in which a high-resi.st-ance epitaxial layer can be growrL irL a reproducible man-ner on a substrate having a comparatively very low resistance.
The invention is inter alia based on the re-cognition of the fact that an i.mportant improvement can be achieved if the side of the substrate remote from thesusceptor is also provided with a layer maskirLg against out-diffusion.
This is achieved by means of the method men-tioned in the preamble when, according to the invention, it is characterized in that the passing-over of the etchant is carried out in two steps, between which two steps an epitaxial growth step is introduced, and that during the second etching step the material deposited on the side of the substrate remote ~rom the susceptor dur-ing the said growth step is removed partly an~ the material obtained by chemical -transport on the side of the substrate facing the susceptor reaches a desired thickness.
The growth of an epitaxial layer of high resistance can be continued on the part of the epitaxial layer remaining on the side of the substrate remote from the susceptor after the second etching step, whi.ch part - -, -, . ~ ,.. .. !
5~
.. . . . .....
21.2.79 3 PHN 9108 compriscs a considerably smaller amount of the volatile dopant than the substrate, since from that instant the substrate is shielded from the surrounding gaseous phase.
In the method according to the invention a substrate is preferably used which consists of silicon and an epitaxial layer of silicon is deposited and the substrate comprises arsenic or boron as a dopant. For example~ an epitaxia~ layer having a high resistivity up to 100~ cm can be grown on an arsenic-doped substrate 10 having a resistivity of 1-3.10 3Q cm in a reproducible manner and with comparatively few crystal defects.
Particularly good resul-ts are obtained if during the second etching step 0.2 - 0.4/um of the material deposited during the said growth step re-mains.
The invention will ~ow be described iIl greaterdetail with reference to an embodiment and the accom-panying drawing, in which Fig. 1 is a diagrammatic sectional view o~
an epitaxial reactor in which the method according to the invention is carried out, and Fig. 2 is a diagrammatic sectional view of a device in a stage of rnanufactu:re by means of the method accordi~g to the invention.
Figure 1 shows a reactor having a quartz tube 9 and a high-frequency induction coil 10 by whlch a temperature is generated in a graphite susceptor 4 which is higher than that of its ambience.
As a result of this, a method can be per- ;
formed in said reactor for providing an epitaxial layer 1, 2 (see also Fig. 2) from a gaseous phase on a sub-strate 3, the susceptor 4 v~ which the subs-trate 3 is heated being provlded with a layer 5 of the same material as that of which the substrate 3 consists.
The substrate 3 is provided on the layer 5 a~ter which an etchant is passed over the substrate 3 so that the side 6 of the substrate 3 remote from the ausoeptor ZZ ~ 9 etched and chemlcal tr~nsport Or the sald 1.
. ~ . . . ,, ~
63~j~
21.2 79 4 ~IIN 9108 matarial takes place from the susceptor ll to the side 7 of the substrate 3 facing the susceptor l~.
The epitaxial. layer 1, 2 is then depos.ited on the side 6 of the substrate 3 remote from the susceptor 4.
~ ccording to the invention the passing-over of the etchant is carried out in..two steps, between which two steps an epitaxial growth step is introduced.
During the second etching step the material deposi.ted on the side 6 of the substrate 3 remote from the suscep-; tor 4 during the said growth step is removed partly and the material ~ obtained by chemical transport on the side 7 of the substrate 3 facing the susceptor 4 ob-tains a desired thickness.
Starting material, for example~ is a d:Lsc-shaped silicon substrate-3 having a diameter of 7.5 cm, a thicl~ness of 420/urn and a doping of arsenic atorns of 3.5010 9 per cm3 (resistivity 1.7.10 3 ~ cm). A 10/um : thick layer 5 of polysilicon is provided on the susceptor in a usual manner.
During the first etching step there is etched for 2 minutes with 1 percent hydrogen chloride in hydro-gen at -approximately 1200 C. During this step approxi-mately 0.41um is etched from the side 6 of -the substrate 3 and a 2/u~m thick layer is transported from the layer : 5 to the si.de 7.
During this etching treatment, arsenic is re-leased in the apparatus.
The said transport takes place under the in-fluence of an approximately 15 C temperature diff`erence between the susceptor l~ and the substrate 3.
~ rinsing treatment with hydrogen at 1200C
for 5 minutes is then carried ou-t and the temperature is reduced to 1150C.
In the subsequent growth step, a 1.3/um thick epitaxial layer is deposited on the side 6 of the sub-strate from a gaseous mixture of trichlorosilane (Si~Cl3) and hydrogen in a usual manner at 1150~C. ......
... ... . . ,, . . .. . _ , .. . . .. ........ . . . . .. .. .... .. .. ... . .. . ..
..... .... .. .... .. .. . . ...... ... ...... . . . ...... . . . _ 21.2.79 5 PHN 910~
In the last-mentioned layer a concentration o~ arsenic ...
atoms usual in known methocls is i.ncorporated from arsenic atorns present in the apparatus and still diffusing out of the substrate. The thickness of the layer 8 increases only slightly.
Another rinsing treatment with hydrogen for 5 minutes is then carried out while the temperature is raised to 1200C.
In the second etching step there is then etched for 5 minutes w:ith 1 percent hydrogen chloride in hydro-gen at approximately 1200C. During this step, so much of the epitaxial layer of the side 6 of the substrate is etched away that a 0~3/um thick layer 1 remains.
This layer 1 serves as a mask against out-dif~usion during the subsequent epitaxial growth on the side 6 of the substrate 3.
During -this etching step, less contamination o.f the apparatus occurs than in the first etching step, since the arsenic concentration of the layer to be etched is lower than that of the substrate.
During this etching step the layer 8 obtains a thic.kness of approximately 7/um.
Subsequently there is rinsed with hydrogen ` for 5 minutes and the temperature is decreased ~rom , 25 1200C t.Q 1~150~. , An epitaxial layer 2 of a desired thickness is then grown at 1150 C from a usual gas mixture of trichlorosilane and hydrogen. This layer is little con-taminated with arsenic and has a resistivity of 100 - 300 ohm cm without any addition.
By the addition of phosphine (PH3) to the epitaxial gas mixture, the layer 2 may be given a desired resistivity below lO0 ohm cm.
By the addit~.on o~ other dopants the layer 2 may also be given another conductivity type with the desired resistivity.
Epitaxial gas mixture o-ther than those mention ed may also be used~ as well as other substrat~s, for 5~
21.2.79 6 PHN 9108 example doped with boron (resistivity 10-20.10 3Q crn)0 -Frorn this it will be obvious that many varia-tions rnay be used without departing ~rom the scope of thi.s invention.
~O
.
.. .. .. . .
21.2.79 1 P~IN 9108 Method of providing an epitaxial la~er.
The invention relates to a method of providing an epitaxial laycr from a gaseous phase on a substrate, in which a susceptor ia which the substrate is heated is provided with a layer of tho same ma-terial as that of which the substrate consists, on which layer the sub-strate is provided, aft~r which an etchant is passed over the subs-trate so that the side of the substrate remote from the susceptor is etched and chemical -trans-port of the said material takes place from the susceptor to the side of the substrate facing the susceptor, and the epitaxial layer is then deposited on the side of thc substrate~remote from the susceptor.
~ method of the kind mentioned in the preamble is known ~rom J. Electrochem. Soc. Vol. 122, 15 1705 - 1709 (1975).
When depositing an epitaxial layer of semi-conductor material on a substrate of semiconductor material comprising a volatile dopant, atoms of said dopant may diffuse out of the subs-trate and land in the gaseous phase. During the deposition said atoms are in-corporated in the epitaxial layer and influence the resistance of the layer This phenomenon is known as the au-todope effect.
In order to prevent this effec-t, special measures have t-o be taken when depositing an epitaxial ~' ~
. , . .... ,. . ~ . .. .. ,. . ..... , .. , . ... ~ .. , . ,, .. _.. ......... . ...... ... ........ . ...
. ~ .
~L3~
21.2.79 ~ ~ PI~ 9~08 layer on a substrate comprising a volatile dopant.
For example, a method is used in which the substrate consisting, for example, of silicon is provid-ed, prior to the epi-taxial deposition~ on the side not to be covered by epitaxy with a layer masking against out-diffusion, for example~ of silicon dioxide or silicon nitride. This is a rather cumbersome method in which moreover the possibility exists that crystal defects are introduced.
The method mentioned in the preamble yields reproducible results only if an epi-taxial layer is de~
posited the resistivity of which need not exceed 10 to 15~2 cm.
One of the objects of the invention is to pro-vide a si.mple and reliable method in which a high-resi.st-ance epitaxial layer can be growrL irL a reproducible man-ner on a substrate having a comparatively very low resistance.
The invention is inter alia based on the re-cognition of the fact that an i.mportant improvement can be achieved if the side of the substrate remote from thesusceptor is also provided with a layer maskirLg against out-diffusion.
This is achieved by means of the method men-tioned in the preamble when, according to the invention, it is characterized in that the passing-over of the etchant is carried out in two steps, between which two steps an epitaxial growth step is introduced, and that during the second etching step the material deposited on the side of the substrate remote ~rom the susceptor dur-ing the said growth step is removed partly an~ the material obtained by chemical -transport on the side of the substrate facing the susceptor reaches a desired thickness.
The growth of an epitaxial layer of high resistance can be continued on the part of the epitaxial layer remaining on the side of the substrate remote from the susceptor after the second etching step, whi.ch part - -, -, . ~ ,.. .. !
5~
.. . . . .....
21.2.79 3 PHN 9108 compriscs a considerably smaller amount of the volatile dopant than the substrate, since from that instant the substrate is shielded from the surrounding gaseous phase.
In the method according to the invention a substrate is preferably used which consists of silicon and an epitaxial layer of silicon is deposited and the substrate comprises arsenic or boron as a dopant. For example~ an epitaxia~ layer having a high resistivity up to 100~ cm can be grown on an arsenic-doped substrate 10 having a resistivity of 1-3.10 3Q cm in a reproducible manner and with comparatively few crystal defects.
Particularly good resul-ts are obtained if during the second etching step 0.2 - 0.4/um of the material deposited during the said growth step re-mains.
The invention will ~ow be described iIl greaterdetail with reference to an embodiment and the accom-panying drawing, in which Fig. 1 is a diagrammatic sectional view o~
an epitaxial reactor in which the method according to the invention is carried out, and Fig. 2 is a diagrammatic sectional view of a device in a stage of rnanufactu:re by means of the method accordi~g to the invention.
Figure 1 shows a reactor having a quartz tube 9 and a high-frequency induction coil 10 by whlch a temperature is generated in a graphite susceptor 4 which is higher than that of its ambience.
As a result of this, a method can be per- ;
formed in said reactor for providing an epitaxial layer 1, 2 (see also Fig. 2) from a gaseous phase on a sub-strate 3, the susceptor 4 v~ which the subs-trate 3 is heated being provlded with a layer 5 of the same material as that of which the substrate 3 consists.
The substrate 3 is provided on the layer 5 a~ter which an etchant is passed over the substrate 3 so that the side 6 of the substrate 3 remote from the ausoeptor ZZ ~ 9 etched and chemlcal tr~nsport Or the sald 1.
. ~ . . . ,, ~
63~j~
21.2 79 4 ~IIN 9108 matarial takes place from the susceptor ll to the side 7 of the substrate 3 facing the susceptor l~.
The epitaxial. layer 1, 2 is then depos.ited on the side 6 of the substrate 3 remote from the susceptor 4.
~ ccording to the invention the passing-over of the etchant is carried out in..two steps, between which two steps an epitaxial growth step is introduced.
During the second etching step the material deposi.ted on the side 6 of the substrate 3 remote from the suscep-; tor 4 during the said growth step is removed partly and the material ~ obtained by chemical transport on the side 7 of the substrate 3 facing the susceptor 4 ob-tains a desired thickness.
Starting material, for example~ is a d:Lsc-shaped silicon substrate-3 having a diameter of 7.5 cm, a thicl~ness of 420/urn and a doping of arsenic atorns of 3.5010 9 per cm3 (resistivity 1.7.10 3 ~ cm). A 10/um : thick layer 5 of polysilicon is provided on the susceptor in a usual manner.
During the first etching step there is etched for 2 minutes with 1 percent hydrogen chloride in hydro-gen at -approximately 1200 C. During this step approxi-mately 0.41um is etched from the side 6 of -the substrate 3 and a 2/u~m thick layer is transported from the layer : 5 to the si.de 7.
During this etching treatment, arsenic is re-leased in the apparatus.
The said transport takes place under the in-fluence of an approximately 15 C temperature diff`erence between the susceptor l~ and the substrate 3.
~ rinsing treatment with hydrogen at 1200C
for 5 minutes is then carried ou-t and the temperature is reduced to 1150C.
In the subsequent growth step, a 1.3/um thick epitaxial layer is deposited on the side 6 of the sub-strate from a gaseous mixture of trichlorosilane (Si~Cl3) and hydrogen in a usual manner at 1150~C. ......
... ... . . ,, . . .. . _ , .. . . .. ........ . . . . .. .. .... .. .. ... . .. . ..
..... .... .. .... .. .. . . ...... ... ...... . . . ...... . . . _ 21.2.79 5 PHN 910~
In the last-mentioned layer a concentration o~ arsenic ...
atoms usual in known methocls is i.ncorporated from arsenic atorns present in the apparatus and still diffusing out of the substrate. The thickness of the layer 8 increases only slightly.
Another rinsing treatment with hydrogen for 5 minutes is then carried out while the temperature is raised to 1200C.
In the second etching step there is then etched for 5 minutes w:ith 1 percent hydrogen chloride in hydro-gen at approximately 1200C. During this step, so much of the epitaxial layer of the side 6 of the substrate is etched away that a 0~3/um thick layer 1 remains.
This layer 1 serves as a mask against out-dif~usion during the subsequent epitaxial growth on the side 6 of the substrate 3.
During -this etching step, less contamination o.f the apparatus occurs than in the first etching step, since the arsenic concentration of the layer to be etched is lower than that of the substrate.
During this etching step the layer 8 obtains a thic.kness of approximately 7/um.
Subsequently there is rinsed with hydrogen ` for 5 minutes and the temperature is decreased ~rom , 25 1200C t.Q 1~150~. , An epitaxial layer 2 of a desired thickness is then grown at 1150 C from a usual gas mixture of trichlorosilane and hydrogen. This layer is little con-taminated with arsenic and has a resistivity of 100 - 300 ohm cm without any addition.
By the addition of phosphine (PH3) to the epitaxial gas mixture, the layer 2 may be given a desired resistivity below lO0 ohm cm.
By the addit~.on o~ other dopants the layer 2 may also be given another conductivity type with the desired resistivity.
Epitaxial gas mixture o-ther than those mention ed may also be used~ as well as other substrat~s, for 5~
21.2.79 6 PHN 9108 example doped with boron (resistivity 10-20.10 3Q crn)0 -Frorn this it will be obvious that many varia-tions rnay be used without departing ~rom the scope of thi.s invention.
~O
.
.. .. .. . .
Claims (4)
THE EMBODIMENTS OF THE INVENTION IN WHICH AN EXCLUSIVE PRO-PERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. A method of providing an epitaxial layer from a gaseous phase on a substrate, in which a susceptor via which the substrate is heated is provided with a layer of the same material as that of which the substrate consists, on which layer the substrate is provided, after which an etchant is passed over the substrate so that the side of the substrate remote from the susceptor is etched and chemical transport of the said material takes place from the susceptor to the side of the substrate facing the susceptor, and the epitaxial layer is then deposited on the side of the substrate remote from the susceptor, characterized in that the passing-over of the etchant is carried out in two steps, between which two steps an epitaxial growth step is introduced, and that during the second etching step the material deposited on the side of the substrate remote from the susceptor during the said growth step is removed partly and the material obtained by chemical transport on the side of the substrate facing the susceptor reaches a desired thickness.
2. A method as claimed in Claim 1, characterized in that a substrate is used which consists of silicon and an epitaxial layer of silicon is deposited.
3. A method as claimed in Claim 2, characterized in that the substrate comprises arsenic or boron as a dopant.
4. A method as claimed in Claim 1, 2 or 3, charac-terized in that during the second etching step 0.2-0.4 µm of the material deposited during the said growth step remains.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7804268,A NL187414C (en) | 1978-04-21 | 1978-04-21 | METHOD FOR APPLYING AN EPITAXIAL LAYER |
| NL7804268 | 1978-04-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1134059A true CA1134059A (en) | 1982-10-19 |
Family
ID=19830695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA325,479A Expired CA1134059A (en) | 1978-04-21 | 1979-04-12 | Method of providing an epitaxial layer |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS54141560A (en) |
| AU (1) | AU523988B2 (en) |
| CA (1) | CA1134059A (en) |
| DE (1) | DE2915883C2 (en) |
| FR (1) | FR2423865A1 (en) |
| GB (1) | GB2019644B (en) |
| IT (1) | IT1112317B (en) |
| NL (1) | NL187414C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0671770B1 (en) * | 1993-02-09 | 2000-08-02 | GENERAL SEMICONDUCTOR, Inc. | Multilayer epitaxy for a silicon diode |
| JP6477210B2 (en) * | 2015-04-30 | 2019-03-06 | 株式会社Sumco | Method of manufacturing epitaxial silicon wafer |
| JP6358472B2 (en) * | 2015-06-08 | 2018-07-18 | 信越半導体株式会社 | Epitaxial wafer manufacturing method |
| JP6447960B2 (en) * | 2016-04-01 | 2019-01-09 | 信越半導体株式会社 | Manufacturing method of silicon epitaxial wafer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL288409A (en) * | 1962-02-02 | |||
| DE2547692C3 (en) * | 1975-10-24 | 1979-10-31 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Method for manufacturing a semiconductor device |
-
1978
- 1978-04-21 NL NLAANVRAGE7804268,A patent/NL187414C/en not_active IP Right Cessation
-
1979
- 1979-04-12 AU AU46046/79A patent/AU523988B2/en not_active Ceased
- 1979-04-12 CA CA325,479A patent/CA1134059A/en not_active Expired
- 1979-04-18 JP JP4850279A patent/JPS54141560A/en active Granted
- 1979-04-18 IT IT21949/79A patent/IT1112317B/en active
- 1979-04-18 GB GB7913398A patent/GB2019644B/en not_active Expired
- 1979-04-19 DE DE2915883A patent/DE2915883C2/en not_active Expired
- 1979-04-20 FR FR7910090A patent/FR2423865A1/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5538819B2 (en) | 1980-10-07 |
| AU523988B2 (en) | 1982-08-26 |
| IT7921949A0 (en) | 1979-04-18 |
| DE2915883C2 (en) | 1987-01-22 |
| DE2915883A1 (en) | 1979-10-31 |
| NL187414C (en) | 1991-09-16 |
| JPS54141560A (en) | 1979-11-02 |
| AU4604679A (en) | 1979-10-25 |
| GB2019644A (en) | 1979-10-31 |
| IT1112317B (en) | 1986-01-13 |
| GB2019644B (en) | 1982-09-29 |
| NL187414B (en) | 1991-04-16 |
| FR2423865B1 (en) | 1984-07-27 |
| NL7804268A (en) | 1979-10-23 |
| FR2423865A1 (en) | 1979-11-16 |
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