GB2019644A - Producing epitaxial layers - Google Patents

Producing epitaxial layers

Info

Publication number
GB2019644A
GB2019644A GB7913398A GB7913398A GB2019644A GB 2019644 A GB2019644 A GB 2019644A GB 7913398 A GB7913398 A GB 7913398A GB 7913398 A GB7913398 A GB 7913398A GB 2019644 A GB2019644 A GB 2019644A
Authority
GB
United Kingdom
Prior art keywords
layer
etching step
epitaxial layers
gas etching
producing epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7913398A
Other versions
GB2019644B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB2019644A publication Critical patent/GB2019644A/en
Application granted granted Critical
Publication of GB2019644B publication Critical patent/GB2019644B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Abstract

Autodoping of an epitaxial layer during vapour phase deposition is reduced by removing part of an initially deposited layer 1 by gas etching before depositing the high resistivity layer 2. An initial gas etching step cleans the upper face 6 of substance 3 and simultaneously covers the lower face 7 with a semiconductor layer 8 by a transport reaction utilising as source a layer of the semiconductor material provided on the surface of the heating susceptor (4) on which the substrate rests. Layer 8 is increased in thickness during the second etching step. <IMAGE>
GB7913398A 1978-04-21 1979-04-18 Producing epitaxial layers Expired GB2019644B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7804268,A NL187414C (en) 1978-04-21 1978-04-21 METHOD FOR APPLYING AN EPITAXIAL LAYER

Publications (2)

Publication Number Publication Date
GB2019644A true GB2019644A (en) 1979-10-31
GB2019644B GB2019644B (en) 1982-09-29

Family

ID=19830695

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7913398A Expired GB2019644B (en) 1978-04-21 1979-04-18 Producing epitaxial layers

Country Status (8)

Country Link
JP (1) JPS54141560A (en)
AU (1) AU523988B2 (en)
CA (1) CA1134059A (en)
DE (1) DE2915883A1 (en)
FR (1) FR2423865A1 (en)
GB (1) GB2019644B (en)
IT (1) IT1112317B (en)
NL (1) NL187414C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0671770A1 (en) * 1993-02-09 1995-09-13 Gi Corporation Multilayer epitaxy for a silicon diode

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6477210B2 (en) * 2015-04-30 2019-03-06 株式会社Sumco Method of manufacturing epitaxial silicon wafer
JP6358472B2 (en) * 2015-06-08 2018-07-18 信越半導体株式会社 Epitaxial wafer manufacturing method
JP6447960B2 (en) * 2016-04-01 2019-01-09 信越半導体株式会社 Manufacturing method of silicon epitaxial wafer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL288409A (en) * 1962-02-02
DE2547692C3 (en) * 1975-10-24 1979-10-31 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method for manufacturing a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0671770A1 (en) * 1993-02-09 1995-09-13 Gi Corporation Multilayer epitaxy for a silicon diode

Also Published As

Publication number Publication date
JPS54141560A (en) 1979-11-02
IT7921949A0 (en) 1979-04-18
AU523988B2 (en) 1982-08-26
JPS5538819B2 (en) 1980-10-07
GB2019644B (en) 1982-09-29
NL187414B (en) 1991-04-16
CA1134059A (en) 1982-10-19
DE2915883C2 (en) 1987-01-22
NL7804268A (en) 1979-10-23
AU4604679A (en) 1979-10-25
DE2915883A1 (en) 1979-10-31
FR2423865B1 (en) 1984-07-27
IT1112317B (en) 1986-01-13
FR2423865A1 (en) 1979-11-16
NL187414C (en) 1991-09-16

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930418