NL288409A - - Google Patents

Info

Publication number
NL288409A
NL288409A NL288409DA NL288409A NL 288409 A NL288409 A NL 288409A NL 288409D A NL288409D A NL 288409DA NL 288409 A NL288409 A NL 288409A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL288409A publication Critical patent/NL288409A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL288409D 1962-02-02 NL288409A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1962S0077852 DE1236481B (en) 1962-02-02 1962-02-02 Method for producing a semiconductor arrangement by depositing the semiconductor material from the gas phase

Publications (1)

Publication Number Publication Date
NL288409A true NL288409A (en)

Family

ID=7507071

Family Applications (1)

Application Number Title Priority Date Filing Date
NL288409D NL288409A (en) 1962-02-02

Country Status (5)

Country Link
CH (1) CH408876A (en)
DE (1) DE1236481B (en)
GB (1) GB970456A (en)
NL (1) NL288409A (en)
SE (1) SE325641B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372671A (en) * 1965-05-26 1968-03-12 Westinghouse Electric Corp Apparatus for producing vapor growth of silicon crystals
JPS5277590A (en) * 1975-12-24 1977-06-30 Toshiba Corp Semiconductor producing device
NL187414C (en) * 1978-04-21 1991-09-16 Philips Nv METHOD FOR APPLYING AN EPITAXIAL LAYER

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE853926C (en) * 1949-04-02 1952-10-30 Licentia Gmbh Process for the production of dry rectifiers with silicon as a semiconducting substance
DE943422C (en) * 1949-04-02 1956-05-17 Licentia Gmbh Controlled dry rectifier, in particular with germanium, silicon or silicon carbide as semiconducting substance
BE509317A (en) * 1951-03-07 1900-01-01
DE950848C (en) * 1953-03-19 1956-10-18 Heraeus Gmbh W C Process for the production of pure silicon
DE1057845B (en) * 1954-03-10 1959-05-21 Licentia Gmbh Process for the production of monocrystalline semiconducting compounds
DE966471C (en) * 1954-07-14 1957-08-08 Heraeus Gmbh W C Process for the production of pure silicon
DE1063870B (en) * 1956-06-28 1959-08-20 Gustav Weissenberg Method and device for crucible-free growing of single crystals from high-purity silicon or germanium

Also Published As

Publication number Publication date
CH408876A (en) 1966-03-15
SE325641B (en) 1970-07-06
GB970456A (en) 1964-09-23
DE1236481B (en) 1967-03-16

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