SE325641B - - Google Patents
Info
- Publication number
- SE325641B SE325641B SE01158/63A SE115863A SE325641B SE 325641 B SE325641 B SE 325641B SE 01158/63 A SE01158/63 A SE 01158/63A SE 115863 A SE115863 A SE 115863A SE 325641 B SE325641 B SE 325641B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1962S0077852 DE1236481B (de) | 1962-02-02 | 1962-02-02 | Verfahren zur Herstellen einer Halbleiteranordnung durch Abscheiden des Halbleiterstoffes aus der Gasphase |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE325641B true SE325641B (xx) | 1970-07-06 |
Family
ID=7507071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE01158/63A SE325641B (xx) | 1962-02-02 | 1963-02-01 |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH408876A (xx) |
| DE (1) | DE1236481B (xx) |
| GB (1) | GB970456A (xx) |
| NL (1) | NL288409A (xx) |
| SE (1) | SE325641B (xx) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3372671A (en) * | 1965-05-26 | 1968-03-12 | Westinghouse Electric Corp | Apparatus for producing vapor growth of silicon crystals |
| JPS5277590A (en) * | 1975-12-24 | 1977-06-30 | Toshiba Corp | Semiconductor producing device |
| NL187414C (nl) * | 1978-04-21 | 1991-09-16 | Philips Nv | Werkwijze voor het aanbrengen van een epitaxiale laag. |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE943422C (de) * | 1949-04-02 | 1956-05-17 | Licentia Gmbh | Gesteuerter Trockengleichrichter, insbesondere mit Germanium, Silizium oder Siliziumkarbid als halbleitender Substanz |
| DE853926C (de) * | 1949-04-02 | 1952-10-30 | Licentia Gmbh | Verfahren zum Herstellen von Trockengleichrichtern mit Silizium als halbleitender Substanz |
| BE509317A (xx) * | 1951-03-07 | 1900-01-01 | ||
| DE950848C (de) * | 1953-03-19 | 1956-10-18 | Heraeus Gmbh W C | Verfahren zur Herstellung von reinem Silicium |
| DE1057845B (de) * | 1954-03-10 | 1959-05-21 | Licentia Gmbh | Verfahren zur Herstellung von einkristallinen halbleitenden Verbindungen |
| DE966471C (de) * | 1954-07-14 | 1957-08-08 | Heraeus Gmbh W C | Verfahren zur Herstellung von reinem Silicium |
| DE1063870B (de) * | 1956-06-28 | 1959-08-20 | Gustav Weissenberg | Verfahren und Vorrichtung zum tiegellosen Zuechten von Einkristallen aus hochreinem Silicium oder Germanium |
-
0
- NL NL288409D patent/NL288409A/xx unknown
-
1962
- 1962-02-02 DE DE1962S0077852 patent/DE1236481B/de active Pending
-
1963
- 1963-01-31 CH CH123363A patent/CH408876A/de unknown
- 1963-02-01 SE SE01158/63A patent/SE325641B/xx unknown
- 1963-02-01 GB GB414763A patent/GB970456A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1236481B (de) | 1967-03-16 |
| CH408876A (de) | 1966-03-15 |
| NL288409A (xx) | |
| GB970456A (en) | 1964-09-23 |