NL187414B - METHOD FOR APPLYING AN EPITAXIAL LAYER - Google Patents
METHOD FOR APPLYING AN EPITAXIAL LAYERInfo
- Publication number
- NL187414B NL187414B NLAANVRAGE7804268,A NL7804268A NL187414B NL 187414 B NL187414 B NL 187414B NL 7804268 A NL7804268 A NL 7804268A NL 187414 B NL187414 B NL 187414B
- Authority
- NL
- Netherlands
- Prior art keywords
- applying
- epitaxial layer
- epitaxial
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE7804268,A NL187414C (en) | 1978-04-21 | 1978-04-21 | METHOD FOR APPLYING AN EPITAXIAL LAYER |
CA325,479A CA1134059A (en) | 1978-04-21 | 1979-04-12 | Method of providing an epitaxial layer |
AU46046/79A AU523988B2 (en) | 1978-04-21 | 1979-04-12 | Depositing epitaxial layer from gaseous phase |
IT21949/79A IT1112317B (en) | 1978-04-21 | 1979-04-18 | METHOD TO CREATE AN EPITAXIAL LAYER |
GB7913398A GB2019644B (en) | 1978-04-21 | 1979-04-18 | Producing epitaxial layers |
JP4850279A JPS54141560A (en) | 1978-04-21 | 1979-04-18 | Method of forming epitaxial layer |
DE19792915883 DE2915883A1 (en) | 1978-04-21 | 1979-04-19 | METHOD OF APPLYING AN EPITACTIC LAYER |
FR7910090A FR2423865A1 (en) | 1978-04-21 | 1979-04-20 | PROCESS FOR THE APPLICATION OF AN EPITAXIAL COAT ON A SUBSTRATE FROM A GAS PHASE |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE7804268,A NL187414C (en) | 1978-04-21 | 1978-04-21 | METHOD FOR APPLYING AN EPITAXIAL LAYER |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7804268A NL7804268A (en) | 1979-10-23 |
NL187414B true NL187414B (en) | 1991-04-16 |
NL187414C NL187414C (en) | 1991-09-16 |
Family
ID=19830695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7804268,A NL187414C (en) | 1978-04-21 | 1978-04-21 | METHOD FOR APPLYING AN EPITAXIAL LAYER |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS54141560A (en) |
AU (1) | AU523988B2 (en) |
CA (1) | CA1134059A (en) |
DE (1) | DE2915883A1 (en) |
FR (1) | FR2423865A1 (en) |
GB (1) | GB2019644B (en) |
IT (1) | IT1112317B (en) |
NL (1) | NL187414C (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0671770B1 (en) * | 1993-02-09 | 2000-08-02 | GENERAL SEMICONDUCTOR, Inc. | Multilayer epitaxy for a silicon diode |
JP6477210B2 (en) * | 2015-04-30 | 2019-03-06 | 株式会社Sumco | Method of manufacturing epitaxial silicon wafer |
JP6358472B2 (en) * | 2015-06-08 | 2018-07-18 | 信越半導体株式会社 | Epitaxial wafer manufacturing method |
JP6447960B2 (en) * | 2016-04-01 | 2019-01-09 | 信越半導体株式会社 | Manufacturing method of silicon epitaxial wafer |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL288409A (en) * | 1962-02-02 | |||
DE2547692C3 (en) * | 1975-10-24 | 1979-10-31 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Method for manufacturing a semiconductor device |
-
1978
- 1978-04-21 NL NLAANVRAGE7804268,A patent/NL187414C/en not_active IP Right Cessation
-
1979
- 1979-04-12 CA CA325,479A patent/CA1134059A/en not_active Expired
- 1979-04-12 AU AU46046/79A patent/AU523988B2/en not_active Ceased
- 1979-04-18 IT IT21949/79A patent/IT1112317B/en active
- 1979-04-18 GB GB7913398A patent/GB2019644B/en not_active Expired
- 1979-04-18 JP JP4850279A patent/JPS54141560A/en active Granted
- 1979-04-19 DE DE19792915883 patent/DE2915883A1/en active Granted
- 1979-04-20 FR FR7910090A patent/FR2423865A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS54141560A (en) | 1979-11-02 |
IT7921949A0 (en) | 1979-04-18 |
AU523988B2 (en) | 1982-08-26 |
JPS5538819B2 (en) | 1980-10-07 |
GB2019644B (en) | 1982-09-29 |
CA1134059A (en) | 1982-10-19 |
DE2915883C2 (en) | 1987-01-22 |
NL7804268A (en) | 1979-10-23 |
AU4604679A (en) | 1979-10-25 |
DE2915883A1 (en) | 1979-10-31 |
FR2423865B1 (en) | 1984-07-27 |
IT1112317B (en) | 1986-01-13 |
FR2423865A1 (en) | 1979-11-16 |
GB2019644A (en) | 1979-10-31 |
NL187414C (en) | 1991-09-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |