JPS5538819B2 - - Google Patents
Info
- Publication number
- JPS5538819B2 JPS5538819B2 JP4850279A JP4850279A JPS5538819B2 JP S5538819 B2 JPS5538819 B2 JP S5538819B2 JP 4850279 A JP4850279 A JP 4850279A JP 4850279 A JP4850279 A JP 4850279A JP S5538819 B2 JPS5538819 B2 JP S5538819B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7804268,A NL187414C (en) | 1978-04-21 | 1978-04-21 | METHOD FOR APPLYING AN EPITAXIAL LAYER |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54141560A JPS54141560A (en) | 1979-11-02 |
| JPS5538819B2 true JPS5538819B2 (en) | 1980-10-07 |
Family
ID=19830695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4850279A Granted JPS54141560A (en) | 1978-04-21 | 1979-04-18 | Method of forming epitaxial layer |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS54141560A (en) |
| AU (1) | AU523988B2 (en) |
| CA (1) | CA1134059A (en) |
| DE (1) | DE2915883A1 (en) |
| FR (1) | FR2423865A1 (en) |
| GB (1) | GB2019644B (en) |
| IT (1) | IT1112317B (en) |
| NL (1) | NL187414C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0671770B1 (en) * | 1993-02-09 | 2000-08-02 | GENERAL SEMICONDUCTOR, Inc. | Multilayer epitaxy for a silicon diode |
| JP6477210B2 (en) * | 2015-04-30 | 2019-03-06 | 株式会社Sumco | Method of manufacturing epitaxial silicon wafer |
| JP6358472B2 (en) * | 2015-06-08 | 2018-07-18 | 信越半導体株式会社 | Epitaxial wafer manufacturing method |
| JP6447960B2 (en) * | 2016-04-01 | 2019-01-09 | 信越半導体株式会社 | Manufacturing method of silicon epitaxial wafer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL288409A (en) * | 1962-02-02 | |||
| DE2547692C3 (en) * | 1975-10-24 | 1979-10-31 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Method for manufacturing a semiconductor device |
-
1978
- 1978-04-21 NL NLAANVRAGE7804268,A patent/NL187414C/en not_active IP Right Cessation
-
1979
- 1979-04-12 CA CA325,479A patent/CA1134059A/en not_active Expired
- 1979-04-12 AU AU46046/79A patent/AU523988B2/en not_active Ceased
- 1979-04-18 GB GB7913398A patent/GB2019644B/en not_active Expired
- 1979-04-18 IT IT21949/79A patent/IT1112317B/en active
- 1979-04-18 JP JP4850279A patent/JPS54141560A/en active Granted
- 1979-04-19 DE DE19792915883 patent/DE2915883A1/en active Granted
- 1979-04-20 FR FR7910090A patent/FR2423865A1/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2423865B1 (en) | 1984-07-27 |
| IT7921949A0 (en) | 1979-04-18 |
| AU523988B2 (en) | 1982-08-26 |
| NL187414C (en) | 1991-09-16 |
| NL7804268A (en) | 1979-10-23 |
| GB2019644B (en) | 1982-09-29 |
| DE2915883A1 (en) | 1979-10-31 |
| NL187414B (en) | 1991-04-16 |
| CA1134059A (en) | 1982-10-19 |
| IT1112317B (en) | 1986-01-13 |
| JPS54141560A (en) | 1979-11-02 |
| GB2019644A (en) | 1979-10-31 |
| DE2915883C2 (en) | 1987-01-22 |
| FR2423865A1 (en) | 1979-11-16 |
| AU4604679A (en) | 1979-10-25 |