NL7804268A - PROCEDURE FOR APPLYING AN EPITAXIAL LAYER. - Google Patents

PROCEDURE FOR APPLYING AN EPITAXIAL LAYER.

Info

Publication number
NL7804268A
NL7804268A NL7804268A NL7804268A NL7804268A NL 7804268 A NL7804268 A NL 7804268A NL 7804268 A NL7804268 A NL 7804268A NL 7804268 A NL7804268 A NL 7804268A NL 7804268 A NL7804268 A NL 7804268A
Authority
NL
Netherlands
Prior art keywords
procedure
applying
epitaxial layer
epitaxial
layer
Prior art date
Application number
NL7804268A
Other languages
Dutch (nl)
Other versions
NL187414C (en
NL187414B (en
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE7804268,A priority Critical patent/NL187414C/en
Priority to CA325,479A priority patent/CA1134059A/en
Priority to AU46046/79A priority patent/AU523988B2/en
Priority to JP4850279A priority patent/JPS54141560A/en
Priority to IT21949/79A priority patent/IT1112317B/en
Priority to GB7913398A priority patent/GB2019644B/en
Priority to DE2915883A priority patent/DE2915883C2/en
Priority to FR7910090A priority patent/FR2423865A1/en
Publication of NL7804268A publication Critical patent/NL7804268A/en
Publication of NL187414B publication Critical patent/NL187414B/en
Application granted granted Critical
Publication of NL187414C publication Critical patent/NL187414C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
NLAANVRAGE7804268,A 1978-04-21 1978-04-21 METHOD FOR APPLYING AN EPITAXIAL LAYER NL187414C (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NLAANVRAGE7804268,A NL187414C (en) 1978-04-21 1978-04-21 METHOD FOR APPLYING AN EPITAXIAL LAYER
AU46046/79A AU523988B2 (en) 1978-04-21 1979-04-12 Depositing epitaxial layer from gaseous phase
CA325,479A CA1134059A (en) 1978-04-21 1979-04-12 Method of providing an epitaxial layer
IT21949/79A IT1112317B (en) 1978-04-21 1979-04-18 METHOD TO CREATE AN EPITAXIAL LAYER
JP4850279A JPS54141560A (en) 1978-04-21 1979-04-18 Method of forming epitaxial layer
GB7913398A GB2019644B (en) 1978-04-21 1979-04-18 Producing epitaxial layers
DE2915883A DE2915883C2 (en) 1978-04-21 1979-04-19 Method for applying an epitaxial layer
FR7910090A FR2423865A1 (en) 1978-04-21 1979-04-20 PROCESS FOR THE APPLICATION OF AN EPITAXIAL COAT ON A SUBSTRATE FROM A GAS PHASE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7804268,A NL187414C (en) 1978-04-21 1978-04-21 METHOD FOR APPLYING AN EPITAXIAL LAYER

Publications (3)

Publication Number Publication Date
NL7804268A true NL7804268A (en) 1979-10-23
NL187414B NL187414B (en) 1991-04-16
NL187414C NL187414C (en) 1991-09-16

Family

ID=19830695

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7804268,A NL187414C (en) 1978-04-21 1978-04-21 METHOD FOR APPLYING AN EPITAXIAL LAYER

Country Status (8)

Country Link
JP (1) JPS54141560A (en)
AU (1) AU523988B2 (en)
CA (1) CA1134059A (en)
DE (1) DE2915883C2 (en)
FR (1) FR2423865A1 (en)
GB (1) GB2019644B (en)
IT (1) IT1112317B (en)
NL (1) NL187414C (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0671770B1 (en) * 1993-02-09 2000-08-02 GENERAL SEMICONDUCTOR, Inc. Multilayer epitaxy for a silicon diode
JP6477210B2 (en) * 2015-04-30 2019-03-06 株式会社Sumco Method of manufacturing epitaxial silicon wafer
JP6358472B2 (en) * 2015-06-08 2018-07-18 信越半導体株式会社 Epitaxial wafer manufacturing method
JP6447960B2 (en) * 2016-04-01 2019-01-09 信越半導体株式会社 Manufacturing method of silicon epitaxial wafer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL288409A (en) * 1962-02-02
DE2547692C3 (en) * 1975-10-24 1979-10-31 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method for manufacturing a semiconductor device

Also Published As

Publication number Publication date
JPS5538819B2 (en) 1980-10-07
AU523988B2 (en) 1982-08-26
IT7921949A0 (en) 1979-04-18
DE2915883C2 (en) 1987-01-22
DE2915883A1 (en) 1979-10-31
NL187414C (en) 1991-09-16
JPS54141560A (en) 1979-11-02
AU4604679A (en) 1979-10-25
GB2019644A (en) 1979-10-31
IT1112317B (en) 1986-01-13
GB2019644B (en) 1982-09-29
NL187414B (en) 1991-04-16
CA1134059A (en) 1982-10-19
FR2423865B1 (en) 1984-07-27
FR2423865A1 (en) 1979-11-16

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee