DE2800924C2 - Logische integrierte Schaltung - Google Patents
Logische integrierte SchaltungInfo
- Publication number
- DE2800924C2 DE2800924C2 DE2800924A DE2800924A DE2800924C2 DE 2800924 C2 DE2800924 C2 DE 2800924C2 DE 2800924 A DE2800924 A DE 2800924A DE 2800924 A DE2800924 A DE 2800924A DE 2800924 C2 DE2800924 C2 DE 2800924C2
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- gate
- transistor
- integrated circuit
- switching transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 15
- 230000000295 complement effect Effects 0.000 claims description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 230000010354 integration Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
- H03K19/09414—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU772441813A SU602056A1 (ru) | 1977-01-10 | 1977-01-10 | Интегральный инвертор |
| SU772441910A SU633395A1 (ru) | 1977-01-10 | 1977-01-10 | Интегральна логическа схема |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2800924A1 DE2800924A1 (de) | 1978-07-20 |
| DE2800924C2 true DE2800924C2 (de) | 1982-10-28 |
Family
ID=26665610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2800924A Expired DE2800924C2 (de) | 1977-01-10 | 1978-01-10 | Logische integrierte Schaltung |
Country Status (10)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4698653A (en) * | 1979-10-09 | 1987-10-06 | Cardwell Jr Walter T | Semiconductor devices controlled by depletion regions |
| US4638344A (en) * | 1979-10-09 | 1987-01-20 | Cardwell Jr Walter T | Junction field-effect transistor controlled by merged depletion regions |
| JPH0760997B2 (ja) * | 1986-06-09 | 1995-06-28 | 日本テキサス・インスツルメンツ株式会社 | 高耐圧出力回路 |
| JP3300593B2 (ja) * | 1995-06-15 | 2002-07-08 | 株式会社東芝 | 半導体集積回路装置 |
| US6737301B2 (en) | 2000-07-13 | 2004-05-18 | Isothermal Systems Research, Inc. | Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor |
| FI20150334A (fi) | 2015-01-14 | 2016-07-15 | Artto Mikael Aurola | Paranneltu puolijohdekokoonpano |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4065680A (en) * | 1974-07-11 | 1977-12-27 | Signetics Corporation | Collector-up logic transmission gates |
| DE2509530C2 (de) * | 1975-03-05 | 1985-05-23 | Ibm Deutschland Gmbh, 7000 Stuttgart | Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren |
| JPS608628B2 (ja) * | 1976-07-05 | 1985-03-04 | ヤマハ株式会社 | 半導体集積回路装置 |
| US4053923A (en) * | 1976-09-23 | 1977-10-11 | Motorola, Inc. | Integrated logic elements with improved speed-power characteristics |
-
1977
- 1977-12-13 CH CH1526877A patent/CH631298A5/de not_active IP Right Cessation
-
1978
- 1978-01-03 US US05/866,626 patent/US4175240A/en not_active Expired - Lifetime
- 1978-01-04 PL PL1978203794A patent/PL114678B1/pl unknown
- 1978-01-05 NL NL7800133A patent/NL7800133A/xx active Search and Examination
- 1978-01-05 CS CS78114A patent/CS201645B1/cs unknown
- 1978-01-06 DD DD78203132A patent/DD134585A1/xx unknown
- 1978-01-09 FR FR7800440A patent/FR2377094A1/fr active Granted
- 1978-01-10 JP JP146678A patent/JPS53111287A/ja active Pending
- 1978-01-10 GB GB901/78A patent/GB1557657A/en not_active Expired
- 1978-01-10 DE DE2800924A patent/DE2800924C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| PL114678B1 (en) | 1981-02-28 |
| PL203794A1 (pl) | 1978-10-23 |
| JPS53111287A (en) | 1978-09-28 |
| GB1557657A (en) | 1979-12-12 |
| NL7800133A (nl) | 1978-07-12 |
| DD134585A1 (de) | 1979-03-07 |
| FR2377094B1 (US08080257-20111220-C00005.png) | 1980-05-16 |
| FR2377094A1 (fr) | 1978-08-04 |
| CS201645B1 (en) | 1980-11-28 |
| US4175240A (en) | 1979-11-20 |
| CH631298A5 (de) | 1982-07-30 |
| DE2800924A1 (de) | 1978-07-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAR | Request for search filed | ||
| OC | Search report available | ||
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: VON FUENER, A., DIPL.-CHEM. DR.RER.NAT. EBBINGHAUS, D., DIPL.-ING. FINCK, K., DIPL.-ING. DR.-ING., PAT.-ANW., 8000 MUENCHEN |
|
| 8363 | Opposition against the patent | ||
| 8365 | Fully valid after opposition proceedings | ||
| 8339 | Ceased/non-payment of the annual fee |