DE2654677A1 - Elektronische schaltungseinheit - Google Patents

Elektronische schaltungseinheit

Info

Publication number
DE2654677A1
DE2654677A1 DE19762654677 DE2654677A DE2654677A1 DE 2654677 A1 DE2654677 A1 DE 2654677A1 DE 19762654677 DE19762654677 DE 19762654677 DE 2654677 A DE2654677 A DE 2654677A DE 2654677 A1 DE2654677 A1 DE 2654677A1
Authority
DE
Germany
Prior art keywords
zone
gate electrode
circuit unit
electronic circuit
unit according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19762654677
Other languages
German (de)
English (en)
Inventor
Shojiro Asai
Kenji Kaneko
Toshiaki Masuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2654677A1 publication Critical patent/DE2654677A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
DE19762654677 1975-12-05 1976-12-02 Elektronische schaltungseinheit Withdrawn DE2654677A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50143995A JPS5268382A (en) 1975-12-05 1975-12-05 Semiconductor circuit unit

Publications (1)

Publication Number Publication Date
DE2654677A1 true DE2654677A1 (de) 1977-06-08

Family

ID=15351851

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762654677 Withdrawn DE2654677A1 (de) 1975-12-05 1976-12-02 Elektronische schaltungseinheit

Country Status (4)

Country Link
US (1) US4089022A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5268382A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2654677A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7613529A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2411512A1 (fr) * 1977-12-06 1979-07-06 Lardy Jean Louis Porte logique a transistor mos multidrain
EP0019560A1 (fr) * 1979-05-21 1980-11-26 ETAT FRANCAIS repr. par le Secrétaire d'Etat aux Postes & Télécommunications (Centre National d'Etudes des Télécommunications) Perfectionnements aux portes logiques à transistors MOS multidrains
FR2497404A1 (fr) * 1980-12-29 1982-07-02 Thomson Csf Transistor mos a fonctionnement bipolaire en saturation

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS554097Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1977-05-18 1980-01-30
DE2947311C2 (de) * 1978-11-24 1982-04-01 Hitachi, Ltd., Tokyo Integrierte Halbleiterschaltung
US4441117A (en) * 1981-07-27 1984-04-03 Intersil, Inc. Monolithically merged field effect transistor and bipolar junction transistor
CH648434A5 (fr) * 1982-04-23 1985-03-15 Centre Electron Horloger Dispositif semiconducteur presentant une caracteristique de fonctionnement d'un transistor bipolaire et circuit m0s incorporant un tel dispositif.
US4590664A (en) * 1983-07-29 1986-05-27 Harris Corporation Method of fabricating low noise reference diodes and transistors
EP0165995A1 (en) * 1983-12-29 1986-01-02 Semi Processes Inc. A programmable logic array circuit
US6232822B1 (en) * 1988-01-08 2001-05-15 Kabushiki Kaisha Toshiba Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism
US5079606A (en) * 1989-01-26 1992-01-07 Casio Computer Co., Ltd. Thin-film memory element
JPH03203095A (ja) * 1989-12-28 1991-09-04 Texas Instr Japan Ltd 半導体記憶装置
US5315143A (en) * 1992-04-28 1994-05-24 Matsushita Electric Industrial Co., Ltd. High density integrated semiconductor device
US5614424A (en) * 1996-01-16 1997-03-25 Taiwan Semiconductor Manufacturing Company Ltd. Method for fabricating an accumulated-base bipolar junction transistor
US6245607B1 (en) 1998-12-28 2001-06-12 Industrial Technology Research Institute Buried channel quasi-unipolar transistor
US7029981B2 (en) * 2004-06-25 2006-04-18 Intersil Americas, Inc. Radiation hardened bipolar junction transistor
JP5019850B2 (ja) * 2006-11-07 2012-09-05 日本信号株式会社 カレントミラー回路の利得制御装置
WO2009019866A1 (ja) * 2007-08-07 2009-02-12 Kaori Takakubo 半導体装置及びその駆動方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
DE1803032A1 (de) * 1967-10-13 1969-05-22 Rca Corp Steuerbares Halbleiterbauelement
DE2143029A1 (de) * 1970-09-18 1972-03-23 Rca Corp Halbleiterschaltungsbaustein

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3974515A (en) * 1974-09-12 1976-08-10 Rca Corporation IGFET on an insulating substrate
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
DE1803032A1 (de) * 1967-10-13 1969-05-22 Rca Corp Steuerbares Halbleiterbauelement
DE2143029A1 (de) * 1970-09-18 1972-03-23 Rca Corp Halbleiterschaltungsbaustein

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"IBM TDB", Bd. 10, No. 7, 1967, S. 1032 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2411512A1 (fr) * 1977-12-06 1979-07-06 Lardy Jean Louis Porte logique a transistor mos multidrain
EP0019560A1 (fr) * 1979-05-21 1980-11-26 ETAT FRANCAIS repr. par le Secrétaire d'Etat aux Postes & Télécommunications (Centre National d'Etudes des Télécommunications) Perfectionnements aux portes logiques à transistors MOS multidrains
FR2457605A2 (fr) * 1979-05-21 1980-12-19 France Etat Perfectionnements aux portes logiques a transistors mos multidrains
FR2497404A1 (fr) * 1980-12-29 1982-07-02 Thomson Csf Transistor mos a fonctionnement bipolaire en saturation
EP0055644A1 (fr) * 1980-12-29 1982-07-07 Thomson-Csf Transistor MOS à fonctionnement bipolaire en saturation

Also Published As

Publication number Publication date
NL7613529A (nl) 1977-06-07
JPS5751952B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-11-05
US4089022A (en) 1978-05-09
JPS5268382A (en) 1977-06-07

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBE

8136 Disposal/non-payment of the fee for publication/grant