JPS5268382A - Semiconductor circuit unit - Google Patents

Semiconductor circuit unit

Info

Publication number
JPS5268382A
JPS5268382A JP50143995A JP14399575A JPS5268382A JP S5268382 A JPS5268382 A JP S5268382A JP 50143995 A JP50143995 A JP 50143995A JP 14399575 A JP14399575 A JP 14399575A JP S5268382 A JPS5268382 A JP S5268382A
Authority
JP
Japan
Prior art keywords
circuit unit
semiconductor circuit
operating
power consumption
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50143995A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5751952B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Shojiro Asai
Toshiaki Masuhara
Kenji Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50143995A priority Critical patent/JPS5268382A/ja
Priority to US05/744,864 priority patent/US4089022A/en
Priority to DE19762654677 priority patent/DE2654677A1/de
Priority to NL7613529A priority patent/NL7613529A/xx
Publication of JPS5268382A publication Critical patent/JPS5268382A/ja
Publication of JPS5751952B2 publication Critical patent/JPS5751952B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP50143995A 1975-12-05 1975-12-05 Semiconductor circuit unit Granted JPS5268382A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP50143995A JPS5268382A (en) 1975-12-05 1975-12-05 Semiconductor circuit unit
US05/744,864 US4089022A (en) 1975-12-05 1976-11-24 Electron device
DE19762654677 DE2654677A1 (de) 1975-12-05 1976-12-02 Elektronische schaltungseinheit
NL7613529A NL7613529A (nl) 1975-12-05 1976-12-03 Actieve elektronische inrichting.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50143995A JPS5268382A (en) 1975-12-05 1975-12-05 Semiconductor circuit unit

Publications (2)

Publication Number Publication Date
JPS5268382A true JPS5268382A (en) 1977-06-07
JPS5751952B2 JPS5751952B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-11-05

Family

ID=15351851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50143995A Granted JPS5268382A (en) 1975-12-05 1975-12-05 Semiconductor circuit unit

Country Status (4)

Country Link
US (1) US4089022A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5268382A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2654677A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7613529A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53158725U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1977-05-18 1978-12-12
JPS58207672A (ja) * 1982-04-23 1983-12-03 サ−トル・エレクトロニク・オルロジユ−ル・ソシエテ・アノニム 半導体装置
JP2008118497A (ja) * 2006-11-07 2008-05-22 Nippon Signal Co Ltd:The カレントミラー回路及びカレントミラー回路の利得制御装置

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2411512A1 (fr) * 1977-12-06 1979-07-06 Lardy Jean Louis Porte logique a transistor mos multidrain
DE2947311C2 (de) * 1978-11-24 1982-04-01 Hitachi, Ltd., Tokyo Integrierte Halbleiterschaltung
FR2457605A2 (fr) * 1979-05-21 1980-12-19 France Etat Perfectionnements aux portes logiques a transistors mos multidrains
FR2497404A1 (fr) * 1980-12-29 1982-07-02 Thomson Csf Transistor mos a fonctionnement bipolaire en saturation
US4441117A (en) * 1981-07-27 1984-04-03 Intersil, Inc. Monolithically merged field effect transistor and bipolar junction transistor
US4590664A (en) * 1983-07-29 1986-05-27 Harris Corporation Method of fabricating low noise reference diodes and transistors
EP0165995A1 (en) * 1983-12-29 1986-01-02 Semi Processes Inc. A programmable logic array circuit
US6232822B1 (en) * 1988-01-08 2001-05-15 Kabushiki Kaisha Toshiba Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism
US5079606A (en) * 1989-01-26 1992-01-07 Casio Computer Co., Ltd. Thin-film memory element
JPH03203095A (ja) * 1989-12-28 1991-09-04 Texas Instr Japan Ltd 半導体記憶装置
US5315143A (en) * 1992-04-28 1994-05-24 Matsushita Electric Industrial Co., Ltd. High density integrated semiconductor device
US5614424A (en) * 1996-01-16 1997-03-25 Taiwan Semiconductor Manufacturing Company Ltd. Method for fabricating an accumulated-base bipolar junction transistor
US6245607B1 (en) 1998-12-28 2001-06-12 Industrial Technology Research Institute Buried channel quasi-unipolar transistor
US7029981B2 (en) * 2004-06-25 2006-04-18 Intersil Americas, Inc. Radiation hardened bipolar junction transistor
WO2009019866A1 (ja) * 2007-08-07 2009-02-12 Kaori Takakubo 半導体装置及びその駆動方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
GB1217880A (en) * 1967-10-13 1970-12-31 Rca Corp Lateral transistor with auxiliary control electrode
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US3974515A (en) * 1974-09-12 1976-08-10 Rca Corporation IGFET on an insulating substrate
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53158725U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1977-05-18 1978-12-12
JPS58207672A (ja) * 1982-04-23 1983-12-03 サ−トル・エレクトロニク・オルロジユ−ル・ソシエテ・アノニム 半導体装置
JP2008118497A (ja) * 2006-11-07 2008-05-22 Nippon Signal Co Ltd:The カレントミラー回路及びカレントミラー回路の利得制御装置

Also Published As

Publication number Publication date
DE2654677A1 (de) 1977-06-08
NL7613529A (nl) 1977-06-07
JPS5751952B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-11-05
US4089022A (en) 1978-05-09

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