FR2411512A1 - Porte logique a transistor mos multidrain - Google Patents
Porte logique a transistor mos multidrainInfo
- Publication number
- FR2411512A1 FR2411512A1 FR7736720A FR7736720A FR2411512A1 FR 2411512 A1 FR2411512 A1 FR 2411512A1 FR 7736720 A FR7736720 A FR 7736720A FR 7736720 A FR7736720 A FR 7736720A FR 2411512 A1 FR2411512 A1 FR 2411512A1
- Authority
- FR
- France
- Prior art keywords
- door
- transistor
- zone
- multidrain
- logic door
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
- H03K19/09414—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
- H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
A.PORTE LOGIQUE A STRUCTURE INTEGREE MOS MONOCANALE COMPRENANT UN TRANSISTOR INVERSEUR DU TYPE A ENRICHISSEMENT ET UN TRANSISTOR DE CHARGE. B.LE TRANSISTOR INVERSEUR COMPORTE UNE PLURALITE DE ZONES DE DRAIN EN NOMBRE EGAL A LA SORTANCE DE LA PORTE. LA ZONE DE GRILLE DU TRANSISTOR INVERSEUR ENTOURE COMPLETEMENT CHAQUE ZONE DE DRAIN CONSTITUANT L'UNE DES SORTIES DE LA PORTE LOGIQUE, EST ENTOUREE COMPLETEMENT PAR LA ZONE DE SOURCE DU TRANSISTOR INVERSEUR, EST RELIEE AU MOINS A LA ZONE DE SOURCE DU TRANSISTOR DE CHARGE ET CONSTITUE PAR SON CONTACT L'ENTREE UNIQUE DE LADITE PORTE LOGIQUE. LES CONNEXIONS DE LIAISONS EXTERNES A L'ENTREE ET AUX SORTIES DE LA PORTE REALISENT DES ET CABLES. C.CIRCUIT INTEGRE DU TYPE MOS.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7736720A FR2411512A1 (fr) | 1977-12-06 | 1977-12-06 | Porte logique a transistor mos multidrain |
GB7845314A GB2015251B (en) | 1977-12-06 | 1978-11-20 | Logic gate having a multi-drain mos transistor |
DE19782851954 DE2851954A1 (de) | 1977-12-06 | 1978-12-01 | Logisches schaltungsglied mit mos- transistoren |
US05/966,502 US4219828A (en) | 1977-12-06 | 1978-12-04 | Multidrain metal-oxide-semiconductor field-effect |
ES475716A ES475716A1 (es) | 1977-12-06 | 1978-12-05 | Puerta logica |
CA317,435A CA1111514A (fr) | 1977-12-06 | 1978-12-05 | Dispositif mos a effet de champ a drains multiples |
NL7811887A NL7811887A (nl) | 1977-12-06 | 1978-12-05 | Poortschakeling. |
JP15013578A JPS5487076A (en) | 1977-12-06 | 1978-12-06 | Multiidrain metal oxide semiconductor fet element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7736720A FR2411512A1 (fr) | 1977-12-06 | 1977-12-06 | Porte logique a transistor mos multidrain |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2411512A1 true FR2411512A1 (fr) | 1979-07-06 |
FR2411512B1 FR2411512B1 (fr) | 1982-10-15 |
Family
ID=9198517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7736720A Granted FR2411512A1 (fr) | 1977-12-06 | 1977-12-06 | Porte logique a transistor mos multidrain |
Country Status (8)
Country | Link |
---|---|
US (1) | US4219828A (fr) |
JP (1) | JPS5487076A (fr) |
CA (1) | CA1111514A (fr) |
DE (1) | DE2851954A1 (fr) |
ES (1) | ES475716A1 (fr) |
FR (1) | FR2411512A1 (fr) |
GB (1) | GB2015251B (fr) |
NL (1) | NL7811887A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0035453A1 (fr) * | 1980-03-04 | 1981-09-09 | Thomson-Csf | Structure de transistor à effet de champ à grille isolée, et application à une réalisation de portes logiques |
FR2493076A1 (fr) * | 1980-10-24 | 1982-04-30 | Majos Jacques | Perfectionnements aux portes logiques a structure integree mos |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4462041A (en) * | 1981-03-20 | 1984-07-24 | Harris Corporation | High speed and current gain insulated gate field effect transistors |
FR2517491A1 (fr) * | 1981-11-27 | 1983-06-03 | Labo Electronique Physique | Combineur-melangeur a transistor double source |
NL8303834A (nl) * | 1983-11-08 | 1985-06-03 | Philips Nv | Halfgeleiderinrichting. |
NL8401117A (nl) * | 1984-04-09 | 1985-11-01 | Philips Nv | Halfgeleiderinrichting met veldeffekttransistors met geisoleerde poortelektrode. |
US4641047A (en) * | 1984-07-02 | 1987-02-03 | Motorola, Inc. | Complex direct coupled transistor logic |
US4680484A (en) * | 1984-10-19 | 1987-07-14 | Trw Inc. | Wired-AND FET logic gate |
TW287307B (fr) * | 1992-04-14 | 1996-10-01 | Philips Electronics Nv | |
JP3346193B2 (ja) * | 1996-11-18 | 2002-11-18 | 松下電器産業株式会社 | 電力増幅器 |
JP3379376B2 (ja) * | 1997-03-14 | 2003-02-24 | 松下電器産業株式会社 | 電界効果トランジスタおよびそれを用いた電力増幅器 |
KR100945467B1 (ko) * | 2001-10-09 | 2010-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스위칭소자, 표시장치, 그 스위칭소자를 사용한 발광장치및 반도체장치 |
JP4202012B2 (ja) | 2001-11-09 | 2008-12-24 | 株式会社半導体エネルギー研究所 | 発光装置及び電流記憶回路 |
JP4046267B2 (ja) * | 2002-03-26 | 2008-02-13 | 株式会社半導体エネルギー研究所 | 表示装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2654677A1 (de) * | 1975-12-05 | 1977-06-08 | Hitachi Ltd | Elektronische schaltungseinheit |
FR2335052A1 (fr) * | 1975-12-09 | 1977-07-08 | Zaidan Hojin Handotai Kenkyu | Circuit integre |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4015278A (en) * | 1974-11-26 | 1977-03-29 | Fujitsu Ltd. | Field effect semiconductor device |
-
1977
- 1977-12-06 FR FR7736720A patent/FR2411512A1/fr active Granted
-
1978
- 1978-11-20 GB GB7845314A patent/GB2015251B/en not_active Expired
- 1978-12-01 DE DE19782851954 patent/DE2851954A1/de not_active Withdrawn
- 1978-12-04 US US05/966,502 patent/US4219828A/en not_active Expired - Lifetime
- 1978-12-05 ES ES475716A patent/ES475716A1/es not_active Expired
- 1978-12-05 CA CA317,435A patent/CA1111514A/fr not_active Expired
- 1978-12-05 NL NL7811887A patent/NL7811887A/xx not_active Application Discontinuation
- 1978-12-06 JP JP15013578A patent/JPS5487076A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2654677A1 (de) * | 1975-12-05 | 1977-06-08 | Hitachi Ltd | Elektronische schaltungseinheit |
FR2335052A1 (fr) * | 1975-12-09 | 1977-07-08 | Zaidan Hojin Handotai Kenkyu | Circuit integre |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0035453A1 (fr) * | 1980-03-04 | 1981-09-09 | Thomson-Csf | Structure de transistor à effet de champ à grille isolée, et application à une réalisation de portes logiques |
FR2493076A1 (fr) * | 1980-10-24 | 1982-04-30 | Majos Jacques | Perfectionnements aux portes logiques a structure integree mos |
Also Published As
Publication number | Publication date |
---|---|
FR2411512B1 (fr) | 1982-10-15 |
US4219828A (en) | 1980-08-26 |
GB2015251A (en) | 1979-09-05 |
ES475716A1 (es) | 1979-04-16 |
DE2851954A1 (de) | 1979-06-07 |
GB2015251B (en) | 1982-03-03 |
CA1111514A (fr) | 1981-10-27 |
NL7811887A (nl) | 1979-06-08 |
JPS5487076A (en) | 1979-07-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse |