NL7613529A - Actieve elektronische inrichting. - Google Patents
Actieve elektronische inrichting.Info
- Publication number
- NL7613529A NL7613529A NL7613529A NL7613529A NL7613529A NL 7613529 A NL7613529 A NL 7613529A NL 7613529 A NL7613529 A NL 7613529A NL 7613529 A NL7613529 A NL 7613529A NL 7613529 A NL7613529 A NL 7613529A
- Authority
- NL
- Netherlands
- Prior art keywords
- electronic device
- active electronic
- active
- electronic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50143995A JPS5268382A (en) | 1975-12-05 | 1975-12-05 | Semiconductor circuit unit |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7613529A true NL7613529A (nl) | 1977-06-07 |
Family
ID=15351851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7613529A NL7613529A (nl) | 1975-12-05 | 1976-12-03 | Actieve elektronische inrichting. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4089022A (nl) |
JP (1) | JPS5268382A (nl) |
DE (1) | DE2654677A1 (nl) |
NL (1) | NL7613529A (nl) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS554097Y2 (nl) * | 1977-05-18 | 1980-01-30 | ||
FR2411512A1 (fr) * | 1977-12-06 | 1979-07-06 | Lardy Jean Louis | Porte logique a transistor mos multidrain |
DE2947311C2 (de) * | 1978-11-24 | 1982-04-01 | Hitachi, Ltd., Tokyo | Integrierte Halbleiterschaltung |
FR2457605A2 (fr) * | 1979-05-21 | 1980-12-19 | France Etat | Perfectionnements aux portes logiques a transistors mos multidrains |
FR2497404A1 (fr) * | 1980-12-29 | 1982-07-02 | Thomson Csf | Transistor mos a fonctionnement bipolaire en saturation |
US4441117A (en) * | 1981-07-27 | 1984-04-03 | Intersil, Inc. | Monolithically merged field effect transistor and bipolar junction transistor |
CH648434A5 (fr) * | 1982-04-23 | 1985-03-15 | Centre Electron Horloger | Dispositif semiconducteur presentant une caracteristique de fonctionnement d'un transistor bipolaire et circuit m0s incorporant un tel dispositif. |
US4590664A (en) * | 1983-07-29 | 1986-05-27 | Harris Corporation | Method of fabricating low noise reference diodes and transistors |
EP0165995A1 (en) * | 1983-12-29 | 1986-01-02 | Semi Processes Inc. | A programmable logic array circuit |
US6232822B1 (en) * | 1988-01-08 | 2001-05-15 | Kabushiki Kaisha Toshiba | Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism |
US5079606A (en) * | 1989-01-26 | 1992-01-07 | Casio Computer Co., Ltd. | Thin-film memory element |
JPH03203095A (ja) * | 1989-12-28 | 1991-09-04 | Texas Instr Japan Ltd | 半導体記憶装置 |
US5315143A (en) * | 1992-04-28 | 1994-05-24 | Matsushita Electric Industrial Co., Ltd. | High density integrated semiconductor device |
US5614424A (en) * | 1996-01-16 | 1997-03-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for fabricating an accumulated-base bipolar junction transistor |
US6245607B1 (en) | 1998-12-28 | 2001-06-12 | Industrial Technology Research Institute | Buried channel quasi-unipolar transistor |
US7029981B2 (en) * | 2004-06-25 | 2006-04-18 | Intersil Americas, Inc. | Radiation hardened bipolar junction transistor |
JP5019850B2 (ja) * | 2006-11-07 | 2012-09-05 | 日本信号株式会社 | カレントミラー回路の利得制御装置 |
WO2009019866A1 (ja) * | 2007-08-07 | 2009-02-12 | Kaori Takakubo | 半導体装置及びその駆動方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2900531A (en) * | 1957-02-28 | 1959-08-18 | Rca Corp | Field-effect transistor |
GB1217880A (en) * | 1967-10-13 | 1970-12-31 | Rca Corp | Lateral transistor with auxiliary control electrode |
US3673428A (en) * | 1970-09-18 | 1972-06-27 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
US3974515A (en) * | 1974-09-12 | 1976-08-10 | Rca Corporation | IGFET on an insulating substrate |
US3967295A (en) * | 1975-04-03 | 1976-06-29 | Rca Corporation | Input transient protection for integrated circuit element |
-
1975
- 1975-12-05 JP JP50143995A patent/JPS5268382A/ja active Granted
-
1976
- 1976-11-24 US US05/744,864 patent/US4089022A/en not_active Expired - Lifetime
- 1976-12-02 DE DE19762654677 patent/DE2654677A1/de not_active Withdrawn
- 1976-12-03 NL NL7613529A patent/NL7613529A/nl not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPS5751952B2 (nl) | 1982-11-05 |
DE2654677A1 (de) | 1977-06-08 |
JPS5268382A (en) | 1977-06-07 |
US4089022A (en) | 1978-05-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
BV | The patent application has lapsed |