DE2632447A1 - Cmos-halbleitervorrichtung - Google Patents

Cmos-halbleitervorrichtung

Info

Publication number
DE2632447A1
DE2632447A1 DE19762632447 DE2632447A DE2632447A1 DE 2632447 A1 DE2632447 A1 DE 2632447A1 DE 19762632447 DE19762632447 DE 19762632447 DE 2632447 A DE2632447 A DE 2632447A DE 2632447 A1 DE2632447 A1 DE 2632447A1
Authority
DE
Germany
Prior art keywords
area
transistor
current
protective layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19762632447
Other languages
German (de)
English (en)
Inventor
Kazuo Satou
Mitsuhiko Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of DE2632447A1 publication Critical patent/DE2632447A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19762632447 1975-07-18 1976-07-19 Cmos-halbleitervorrichtung Ceased DE2632447A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50087397A JPS5211872A (en) 1975-07-18 1975-07-18 Semiconductor device

Publications (1)

Publication Number Publication Date
DE2632447A1 true DE2632447A1 (de) 1977-01-20

Family

ID=13913732

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762632447 Ceased DE2632447A1 (de) 1975-07-18 1976-07-19 Cmos-halbleitervorrichtung

Country Status (6)

Country Link
JP (1) JPS5211872A (enrdf_load_stackoverflow)
CH (1) CH611739A5 (enrdf_load_stackoverflow)
DE (1) DE2632447A1 (enrdf_load_stackoverflow)
FR (1) FR2318503A1 (enrdf_load_stackoverflow)
GB (1) GB1559582A (enrdf_load_stackoverflow)
MY (1) MY8100316A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0013482A3 (en) * 1978-12-27 1980-10-15 Fujitsu Limited Complementary metal-oxide semiconductor

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128281A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit
JPS58210660A (ja) * 1982-06-01 1983-12-07 Seiko Epson Corp 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3226611A (en) * 1962-08-23 1965-12-28 Motorola Inc Semiconductor device
DE2411839A1 (de) * 1973-03-14 1974-09-26 Rca Corp Integrierte feldeffekttransistorschaltung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3226611A (en) * 1962-08-23 1965-12-28 Motorola Inc Semiconductor device
DE2411839A1 (de) * 1973-03-14 1974-09-26 Rca Corp Integrierte feldeffekttransistorschaltung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
US-Z.: "IEEE J. of Sol.-St. Circ.", Bd. SC-9, No. 3, Juni 1974, S. 103-110 *
US-Z.: "Microelectronics and Reliability", Bd. 13, Okt. 1974, S. 363-372 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0013482A3 (en) * 1978-12-27 1980-10-15 Fujitsu Limited Complementary metal-oxide semiconductor

Also Published As

Publication number Publication date
FR2318503A1 (fr) 1977-02-11
FR2318503B1 (enrdf_load_stackoverflow) 1980-05-16
JPS5211872A (en) 1977-01-29
GB1559582A (en) 1980-01-23
JPS626347B2 (enrdf_load_stackoverflow) 1987-02-10
CH611739A5 (en) 1979-06-15
MY8100316A (en) 1981-12-31

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZ

8131 Rejection