MY8100316A - A complementary mosfet device - Google Patents
A complementary mosfet deviceInfo
- Publication number
- MY8100316A MY8100316A MY8100316A MY8100316A MY8100316A MY 8100316 A MY8100316 A MY 8100316A MY 8100316 A MY8100316 A MY 8100316A MY 8100316 A MY8100316 A MY 8100316A MY 8100316 A MY8100316 A MY 8100316A
- Authority
- MY
- Malaysia
- Prior art keywords
- mosfet device
- complementary mosfet
- complementary
- mosfet
- Prior art date
Links
- 230000000295 complement effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50087397A JPS5211872A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY8100316A true MY8100316A (en) | 1981-12-31 |
Family
ID=13913732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MY8100316A MY8100316A (en) | 1975-07-18 | 1981-12-30 | A complementary mosfet device |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5211872A (en) |
| CH (1) | CH611739A5 (en) |
| DE (1) | DE2632447A1 (en) |
| FR (1) | FR2318503A1 (en) |
| GB (1) | GB1559582A (en) |
| MY (1) | MY8100316A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53128281A (en) * | 1977-04-15 | 1978-11-09 | Hitachi Ltd | Insulated gate field effect type semiconductor device for large power |
| GB1549130A (en) * | 1977-06-01 | 1979-08-01 | Hughes Microelectronics Ltd Cm | Monolithic integrated circuit |
| JPS5591162A (en) * | 1978-12-27 | 1980-07-10 | Fujitsu Ltd | Semiconductor device |
| JPS58210660A (en) * | 1982-06-01 | 1983-12-07 | Seiko Epson Corp | Semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE636316A (en) * | 1962-08-23 | 1900-01-01 | ||
| US3916430A (en) * | 1973-03-14 | 1975-10-28 | Rca Corp | System for eliminating substrate bias effect in field effect transistor circuits |
-
1975
- 1975-07-18 JP JP50087397A patent/JPS5211872A/en active Granted
-
1976
- 1976-07-14 GB GB2928276A patent/GB1559582A/en not_active Expired
- 1976-07-19 CH CH923676A patent/CH611739A5/en not_active IP Right Cessation
- 1976-07-19 DE DE19762632447 patent/DE2632447A1/en not_active Ceased
- 1976-07-19 FR FR7621993A patent/FR2318503A1/en active Granted
-
1981
- 1981-12-30 MY MY8100316A patent/MY8100316A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH611739A5 (en) | 1979-06-15 |
| GB1559582A (en) | 1980-01-23 |
| DE2632447A1 (en) | 1977-01-20 |
| FR2318503B1 (en) | 1980-05-16 |
| JPS626347B2 (en) | 1987-02-10 |
| JPS5211872A (en) | 1977-01-29 |
| FR2318503A1 (en) | 1977-02-11 |
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