CH611739A5 - CMOS Semiconductor circuit - Google Patents

CMOS Semiconductor circuit

Info

Publication number
CH611739A5
CH611739A5 CH923676A CH923676A CH611739A5 CH 611739 A5 CH611739 A5 CH 611739A5 CH 923676 A CH923676 A CH 923676A CH 923676 A CH923676 A CH 923676A CH 611739 A5 CH611739 A5 CH 611739A5
Authority
CH
Switzerland
Prior art keywords
semiconductor circuit
cmos semiconductor
cmos
circuit
semiconductor
Prior art date
Application number
CH923676A
Inventor
Kazuo Satou
Mitsuhiko Ueno
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Publication of CH611739A5 publication Critical patent/CH611739A5/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
CH923676A 1975-07-18 1976-07-19 CMOS Semiconductor circuit CH611739A5 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50087397A JPS5211872A (en) 1975-07-18 1975-07-18 Semiconductor device

Publications (1)

Publication Number Publication Date
CH611739A5 true CH611739A5 (en) 1979-06-15

Family

ID=13913732

Family Applications (1)

Application Number Title Priority Date Filing Date
CH923676A CH611739A5 (en) 1975-07-18 1976-07-19 CMOS Semiconductor circuit

Country Status (6)

Country Link
JP (1) JPS5211872A (en)
CH (1) CH611739A5 (en)
DE (1) DE2632447A1 (en)
FR (1) FR2318503A1 (en)
GB (1) GB1559582A (en)
MY (1) MY8100316A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128281A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit
JPS5591162A (en) * 1978-12-27 1980-07-10 Fujitsu Ltd Semiconductor device
JPS58210660A (en) * 1982-06-01 1983-12-07 Seiko Epson Corp Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE636317A (en) * 1962-08-23 1900-01-01
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits

Also Published As

Publication number Publication date
GB1559582A (en) 1980-01-23
FR2318503B1 (en) 1980-05-16
FR2318503A1 (en) 1977-02-11
JPS626347B2 (en) 1987-02-10
JPS5211872A (en) 1977-01-29
MY8100316A (en) 1981-12-31
DE2632447A1 (en) 1977-01-20

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Legal Events

Date Code Title Description
PL Patent ceased