GB1559582A - Complementary mosfet device - Google Patents
Complementary mosfet device Download PDFInfo
- Publication number
- GB1559582A GB1559582A GB29282/76A GB2928276A GB1559582A GB 1559582 A GB1559582 A GB 1559582A GB 29282/76 A GB29282/76 A GB 29282/76A GB 2928276 A GB2928276 A GB 2928276A GB 1559582 A GB1559582 A GB 1559582A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- sources
- current
- transistor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000295 complement effect Effects 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 230000003321 amplification Effects 0.000 claims description 40
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 40
- 230000003071 parasitic effect Effects 0.000 claims description 34
- 230000008878 coupling Effects 0.000 claims description 32
- 238000010168 coupling process Methods 0.000 claims description 32
- 238000005859 coupling reaction Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 abstract description 64
- 230000001960 triggered effect Effects 0.000 abstract 1
- 230000002159 abnormal effect Effects 0.000 description 56
- 238000010586 diagram Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000002459 sustained effect Effects 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241001080526 Vertica Species 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50087397A JPS5211872A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1559582A true GB1559582A (en) | 1980-01-23 |
Family
ID=13913732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB29282/76A Expired GB1559582A (en) | 1975-07-18 | 1976-07-14 | Complementary mosfet device |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5211872A (enrdf_load_stackoverflow) |
| CH (1) | CH611739A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2632447A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2318503A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1559582A (enrdf_load_stackoverflow) |
| MY (1) | MY8100316A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53128281A (en) * | 1977-04-15 | 1978-11-09 | Hitachi Ltd | Insulated gate field effect type semiconductor device for large power |
| GB1549130A (en) * | 1977-06-01 | 1979-08-01 | Hughes Microelectronics Ltd Cm | Monolithic integrated circuit |
| JPS5591162A (en) * | 1978-12-27 | 1980-07-10 | Fujitsu Ltd | Semiconductor device |
| JPS58210660A (ja) * | 1982-06-01 | 1983-12-07 | Seiko Epson Corp | 半導体装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE636316A (enrdf_load_stackoverflow) * | 1962-08-23 | 1900-01-01 | ||
| US3916430A (en) * | 1973-03-14 | 1975-10-28 | Rca Corp | System for eliminating substrate bias effect in field effect transistor circuits |
-
1975
- 1975-07-18 JP JP50087397A patent/JPS5211872A/ja active Granted
-
1976
- 1976-07-14 GB GB29282/76A patent/GB1559582A/en not_active Expired
- 1976-07-19 DE DE19762632447 patent/DE2632447A1/de not_active Ceased
- 1976-07-19 CH CH923676A patent/CH611739A5/xx not_active IP Right Cessation
- 1976-07-19 FR FR7621993A patent/FR2318503A1/fr active Granted
-
1981
- 1981-12-30 MY MY316/81A patent/MY8100316A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2318503A1 (fr) | 1977-02-11 |
| DE2632447A1 (de) | 1977-01-20 |
| JPS626347B2 (enrdf_load_stackoverflow) | 1987-02-10 |
| CH611739A5 (en) | 1979-06-15 |
| FR2318503B1 (enrdf_load_stackoverflow) | 1980-05-16 |
| MY8100316A (en) | 1981-12-31 |
| JPS5211872A (en) | 1977-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4100561A (en) | Protective circuit for MOS devices | |
| KR100237262B1 (ko) | 반도체 장치내에서 사용하기 위한 입력/출력 보호장치 | |
| US4698655A (en) | Overvoltage and overtemperature protection circuit | |
| US4152717A (en) | Complementary MOSFET device | |
| US3940785A (en) | Semiconductor I.C. with protection against reversed power supply | |
| JPH0347593B2 (enrdf_load_stackoverflow) | ||
| US7075123B2 (en) | Semiconductor input protection circuit | |
| US4543593A (en) | Semiconductor protective device | |
| US4261004A (en) | Semiconductor device | |
| JP3325396B2 (ja) | 半導体集積回路 | |
| US4302875A (en) | Complementary MOSFET device and method of manufacturing the same | |
| US4103181A (en) | Monolithic integrated transistor and protective circuit therefor | |
| US4168442A (en) | CMOS FET device with abnormal current flow prevention | |
| GB1559582A (en) | Complementary mosfet device | |
| US4149176A (en) | Complementary MOSFET device | |
| US4109272A (en) | Lateral bipolar transistor | |
| JPH049378B2 (enrdf_load_stackoverflow) | ||
| US4167747A (en) | Complementary mosfet device and method of manufacturing the same | |
| JPH05505060A (ja) | 低トリガ電圧ｓｃｒ保護装置及び構造 | |
| US3260900A (en) | Temperature compensating barrier layer semiconductor | |
| GB1559581A (en) | Complementary mosfet device | |
| US3877059A (en) | Single diffused monolithic darlington circuit and method of manufacture thereof | |
| US3453505A (en) | Integrated complementary transistor circuit | |
| US3936862A (en) | MISFET and method of manufacture | |
| JP3425574B2 (ja) | 半導体集積回路の入出力保護装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19960713 |