CH611739A5 - CMOS Semiconductor circuit - Google Patents

CMOS Semiconductor circuit

Info

Publication number
CH611739A5
CH611739A5 CH923676A CH923676A CH611739A5 CH 611739 A5 CH611739 A5 CH 611739A5 CH 923676 A CH923676 A CH 923676A CH 923676 A CH923676 A CH 923676A CH 611739 A5 CH611739 A5 CH 611739A5
Authority
CH
Switzerland
Prior art keywords
semiconductor circuit
cmos semiconductor
cmos
circuit
semiconductor
Prior art date
Application number
CH923676A
Other languages
English (en)
Inventor
Kazuo Satou
Mitsuhiko Ueno
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Publication of CH611739A5 publication Critical patent/CH611739A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
CH923676A 1975-07-18 1976-07-19 CMOS Semiconductor circuit CH611739A5 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50087397A JPS5211872A (en) 1975-07-18 1975-07-18 Semiconductor device

Publications (1)

Publication Number Publication Date
CH611739A5 true CH611739A5 (en) 1979-06-15

Family

ID=13913732

Family Applications (1)

Application Number Title Priority Date Filing Date
CH923676A CH611739A5 (en) 1975-07-18 1976-07-19 CMOS Semiconductor circuit

Country Status (6)

Country Link
JP (1) JPS5211872A (enrdf_load_stackoverflow)
CH (1) CH611739A5 (enrdf_load_stackoverflow)
DE (1) DE2632447A1 (enrdf_load_stackoverflow)
FR (1) FR2318503A1 (enrdf_load_stackoverflow)
GB (1) GB1559582A (enrdf_load_stackoverflow)
MY (1) MY8100316A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128281A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit
JPS5591162A (en) * 1978-12-27 1980-07-10 Fujitsu Ltd Semiconductor device
JPS58210660A (ja) * 1982-06-01 1983-12-07 Seiko Epson Corp 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE636316A (enrdf_load_stackoverflow) * 1962-08-23 1900-01-01
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits

Also Published As

Publication number Publication date
FR2318503A1 (fr) 1977-02-11
DE2632447A1 (de) 1977-01-20
JPS626347B2 (enrdf_load_stackoverflow) 1987-02-10
GB1559582A (en) 1980-01-23
FR2318503B1 (enrdf_load_stackoverflow) 1980-05-16
MY8100316A (en) 1981-12-31
JPS5211872A (en) 1977-01-29

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Legal Events

Date Code Title Description
PL Patent ceased