FR2318503A1 - Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire - Google Patents

Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire

Info

Publication number
FR2318503A1
FR2318503A1 FR7621993A FR7621993A FR2318503A1 FR 2318503 A1 FR2318503 A1 FR 2318503A1 FR 7621993 A FR7621993 A FR 7621993A FR 7621993 A FR7621993 A FR 7621993A FR 2318503 A1 FR2318503 A1 FR 2318503A1
Authority
FR
France
Prior art keywords
oxide
effect transistor
complementary metal
semiconductor field
transistor circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7621993A
Other languages
English (en)
French (fr)
Other versions
FR2318503B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2318503A1 publication Critical patent/FR2318503A1/fr
Application granted granted Critical
Publication of FR2318503B1 publication Critical patent/FR2318503B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
FR7621993A 1975-07-18 1976-07-19 Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire Granted FR2318503A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50087397A JPS5211872A (en) 1975-07-18 1975-07-18 Semiconductor device

Publications (2)

Publication Number Publication Date
FR2318503A1 true FR2318503A1 (fr) 1977-02-11
FR2318503B1 FR2318503B1 (enrdf_load_stackoverflow) 1980-05-16

Family

ID=13913732

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7621993A Granted FR2318503A1 (fr) 1975-07-18 1976-07-19 Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire

Country Status (6)

Country Link
JP (1) JPS5211872A (enrdf_load_stackoverflow)
CH (1) CH611739A5 (enrdf_load_stackoverflow)
DE (1) DE2632447A1 (enrdf_load_stackoverflow)
FR (1) FR2318503A1 (enrdf_load_stackoverflow)
GB (1) GB1559582A (enrdf_load_stackoverflow)
MY (1) MY8100316A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2393429A1 (fr) * 1977-06-01 1978-12-29 Hughes Microelectronics Ltd Circuit integre semi-conducteur oxyde-metal a symetrie complementaire
FR2396412A1 (enrdf_load_stackoverflow) * 1977-04-15 1979-01-26 Hitachi Ltd

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591162A (en) * 1978-12-27 1980-07-10 Fujitsu Ltd Semiconductor device
JPS58210660A (ja) * 1982-06-01 1983-12-07 Seiko Epson Corp 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE636316A (enrdf_load_stackoverflow) * 1962-08-23 1900-01-01
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2396412A1 (enrdf_load_stackoverflow) * 1977-04-15 1979-01-26 Hitachi Ltd
FR2393429A1 (fr) * 1977-06-01 1978-12-29 Hughes Microelectronics Ltd Circuit integre semi-conducteur oxyde-metal a symetrie complementaire

Also Published As

Publication number Publication date
DE2632447A1 (de) 1977-01-20
JPS626347B2 (enrdf_load_stackoverflow) 1987-02-10
CH611739A5 (en) 1979-06-15
GB1559582A (en) 1980-01-23
FR2318503B1 (enrdf_load_stackoverflow) 1980-05-16
MY8100316A (en) 1981-12-31
JPS5211872A (en) 1977-01-29

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