FR2393429A1 - Circuit integre semi-conducteur oxyde-metal a symetrie complementaire - Google Patents

Circuit integre semi-conducteur oxyde-metal a symetrie complementaire

Info

Publication number
FR2393429A1
FR2393429A1 FR7816071A FR7816071A FR2393429A1 FR 2393429 A1 FR2393429 A1 FR 2393429A1 FR 7816071 A FR7816071 A FR 7816071A FR 7816071 A FR7816071 A FR 7816071A FR 2393429 A1 FR2393429 A1 FR 2393429A1
Authority
FR
France
Prior art keywords
complementary
symetry
integrated circuit
semiconductor oxide
metal integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7816071A
Other languages
English (en)
Other versions
FR2393429B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hughes Microelectronics Ltd
Original Assignee
Hughes Microelectronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Microelectronics Ltd filed Critical Hughes Microelectronics Ltd
Publication of FR2393429A1 publication Critical patent/FR2393429A1/fr
Application granted granted Critical
Publication of FR2393429B1 publication Critical patent/FR2393429B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention concerne les circuits électroniques intégrés. Sur un substrat comprenant deux transistors MOS complémentaires, on prévoit une région supplémentaire en matériau du second type de conductivité formée dans le substrat entre les transistors précités, le fonctionnement de cette région supplémentaire étant tel qu'elle élimine les phénomènes de conduction bipolaire susceptibles d'établir un courant de réaction dans le substrat entre les transistors.
FR7816071A 1977-06-01 1978-05-30 Circuit integre semi-conducteur oxyde-metal a symetrie complementaire Granted FR2393429A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB23248/77A GB1549130A (en) 1977-06-01 1977-06-01 Monolithic integrated circuit

Publications (2)

Publication Number Publication Date
FR2393429A1 true FR2393429A1 (fr) 1978-12-29
FR2393429B1 FR2393429B1 (fr) 1983-03-18

Family

ID=10192584

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7816071A Granted FR2393429A1 (fr) 1977-06-01 1978-05-30 Circuit integre semi-conducteur oxyde-metal a symetrie complementaire

Country Status (4)

Country Link
US (1) US4173767A (fr)
DE (1) DE2822094A1 (fr)
FR (1) FR2393429A1 (fr)
GB (1) GB1549130A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591162A (en) * 1978-12-27 1980-07-10 Fujitsu Ltd Semiconductor device
US4320409A (en) * 1980-05-01 1982-03-16 Bell Telephone Laboratories, Incorporated Complementary field-effect transistor integrated circuit device
JPS5873147A (ja) * 1981-10-27 1983-05-02 Mitsubishi Electric Corp 半導体集積回路装置
US4797724A (en) * 1982-06-30 1989-01-10 Honeywell Inc. Reducing bipolar parasitic effects in IGFET devices
JPS5955073A (ja) * 1982-09-24 1984-03-29 Fujitsu Ltd 半導体装置
US4683488A (en) * 1984-03-29 1987-07-28 Hughes Aircraft Company Latch-up resistant CMOS structure for VLSI including retrograded wells
US4757363A (en) * 1984-09-14 1988-07-12 Harris Corporation ESD protection network for IGFET circuits with SCR prevention guard rings
ES2048049B1 (es) * 1991-09-05 1995-12-16 Alcatel Standard Electrica Procedimiento para la extraccion de un reloj en los sistemas de comunicaciones digitales en rafagas
DE19545554A1 (de) * 1995-12-06 1997-06-12 Siemens Ag CMOS-Anordnung
US8482029B2 (en) * 2011-05-27 2013-07-09 Infineon Technologies Austria Ag Semiconductor device and integrated circuit including the semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2044027A1 (de) * 1969-09-05 1971-03-25 Hitachi Ltd Halbleiteranordnung zur Unterdrückung der Stör MOSFET Bildung bei integrierten Schaltungen
FR2106614A1 (fr) * 1970-09-18 1972-05-05 Rca Corp
US3720848A (en) * 1971-07-01 1973-03-13 Motorola Inc Solid-state relay
FR2318503A1 (fr) * 1975-07-18 1977-02-11 Tokyo Shibaura Electric Co Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1263817A (en) * 1969-11-10 1972-02-16 Marconi Co Ltd Improvements in or relating to integrated circuits
US3641511A (en) * 1970-02-06 1972-02-08 Westinghouse Electric Corp Complementary mosfet integrated circuit memory
US3959812A (en) * 1973-02-26 1976-05-25 Hitachi, Ltd. High-voltage semiconductor integrated circuit
US3955210A (en) * 1974-12-30 1976-05-04 International Business Machines Corporation Elimination of SCR structure
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element
GB1559581A (en) * 1975-07-18 1980-01-23 Tokyo Shibaura Electric Co Complementary mosfet device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2044027A1 (de) * 1969-09-05 1971-03-25 Hitachi Ltd Halbleiteranordnung zur Unterdrückung der Stör MOSFET Bildung bei integrierten Schaltungen
FR2106614A1 (fr) * 1970-09-18 1972-05-05 Rca Corp
US3720848A (en) * 1971-07-01 1973-03-13 Motorola Inc Solid-state relay
FR2318503A1 (fr) * 1975-07-18 1977-02-11 Tokyo Shibaura Electric Co Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *

Also Published As

Publication number Publication date
FR2393429B1 (fr) 1983-03-18
US4173767A (en) 1979-11-06
DE2822094C2 (fr) 1990-09-27
DE2822094A1 (de) 1978-12-14
GB1549130A (en) 1979-08-01

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