GB2016208A - Integrated circuit including a resistive element - Google Patents

Integrated circuit including a resistive element

Info

Publication number
GB2016208A
GB2016208A GB7902423A GB7902423A GB2016208A GB 2016208 A GB2016208 A GB 2016208A GB 7902423 A GB7902423 A GB 7902423A GB 7902423 A GB7902423 A GB 7902423A GB 2016208 A GB2016208 A GB 2016208A
Authority
GB
United Kingdom
Prior art keywords
sheet
integrated circuit
resistivity zone
resistive element
circuit including
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB7902423A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB2016208A publication Critical patent/GB2016208A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

An integrated circuit includes a resistive element in which a high- sheet-resistivity zone (11) connects two spaced-apart zones (12, 13). A conductive field plate (15) overlies the high- sheet-resistivity zone (11) and is insulated from it by a composite insulating layer (16, 17). The field plate (15) is connected to a node of the circuit and stabilises the resistance of the element by inhibiting depletion or inversion of surface regions of the high-sheet- resistivity zone (11). A suitable node is one (13) of the spaced-apart zones, preferably the one which in use is the more negative, in the case of a P-type high- sheet-resistivity zone. The invention is particularly applicable to linear integrated circuits where stable resistances are required. <IMAGE>
GB7902423A 1978-01-25 1979-01-23 Integrated circuit including a resistive element Pending GB2016208A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87217378A 1978-01-25 1978-01-25

Publications (1)

Publication Number Publication Date
GB2016208A true GB2016208A (en) 1979-09-19

Family

ID=25358994

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7902423A Pending GB2016208A (en) 1978-01-25 1979-01-23 Integrated circuit including a resistive element

Country Status (8)

Country Link
JP (1) JPS54121083A (en)
BE (1) BE873652A (en)
DE (1) DE2902494A1 (en)
FR (1) FR2415878A1 (en)
GB (1) GB2016208A (en)
IT (1) IT7967158A0 (en)
NL (1) NL7900530A (en)
SE (1) SE7900379L (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2262188A (en) * 1988-11-22 1993-06-09 Seiko Epson Corp A high precision semiconductor device
EP1184910A2 (en) * 2000-08-30 2002-03-06 Agere Systems Guardian Corporation Field plated resistor with enhanced routing area thereover
EP1184909A2 (en) * 2000-08-30 2002-03-06 Agere Systems Guardian Corporation Method of manufacturing an integrated circuit

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2430092A1 (en) * 1978-06-29 1980-01-25 Ibm France METHOD FOR CORRECTING THE VOLTAGE COEFFICIENT OF SEMICONDUCTOR, DIFFUSED OR IMPLANTED RESISTORS AND RESISTORS THUS OBTAINED
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
JPS5864059A (en) * 1981-10-14 1983-04-16 Hitachi Ltd High withstand resistance element

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3683491A (en) * 1970-11-12 1972-08-15 Carroll E Nelson Method for fabricating pinched resistor semiconductor structure
US4058887A (en) * 1971-02-19 1977-11-22 Ibm Corporation Method for forming a transistor comprising layers of silicon dioxide and silicon nitride
US3873372A (en) * 1973-07-09 1975-03-25 Ibm Method for producing improved transistor devices
DE2435606C3 (en) * 1974-07-24 1979-03-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Series connection of field effect transistors for the realization of a high-ohmic linear resistance
US4001612A (en) * 1975-12-17 1977-01-04 International Business Machines Corporation Linear resistance element for lsi circuitry
FR2351505A1 (en) * 1976-05-13 1977-12-09 Ibm France PROCEDURE FOR CORRECTING THE TENSION COEFFICIENT OF SEMICONDUCTOR, IMPLANTED OR DIFFUSED RESISTORS

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2262188A (en) * 1988-11-22 1993-06-09 Seiko Epson Corp A high precision semiconductor device
GB2262188B (en) * 1988-11-22 1993-09-15 Seiko Epson Corp A high precision semiconductor resistor device
GB2232530B (en) * 1988-11-22 1993-09-22 Seiko Epson Corp A high precision semiconductor resistor device
EP1184910A2 (en) * 2000-08-30 2002-03-06 Agere Systems Guardian Corporation Field plated resistor with enhanced routing area thereover
EP1184909A2 (en) * 2000-08-30 2002-03-06 Agere Systems Guardian Corporation Method of manufacturing an integrated circuit
EP1184909A3 (en) * 2000-08-30 2004-10-13 Agere Systems Guardian Corporation Method of manufacturing an integrated circuit
EP1184910A3 (en) * 2000-08-30 2004-10-13 Agere Systems Guardian Corporation Field plated resistor with enhanced routing area thereover
US7439146B1 (en) 2000-08-30 2008-10-21 Agere Systems Inc. Field plated resistor with enhanced routing area thereover
KR100870256B1 (en) * 2000-08-30 2008-11-25 에이저 시스템즈 가디언 코포레이션 Field Plated Resistor with Enhanced Routing Area Thereover

Also Published As

Publication number Publication date
FR2415878A1 (en) 1979-08-24
NL7900530A (en) 1979-07-27
IT7967158A0 (en) 1979-01-24
JPS54121083A (en) 1979-09-19
BE873652A (en) 1979-05-16
SE7900379L (en) 1979-07-26
DE2902494A1 (en) 1979-07-26

Similar Documents

Publication Publication Date Title
SE7906961L (en) INSULATING BERORGAN
IT8020435A0 (en) COMPOSITION OF VULCANIZABLE AND ELECTRICALLY CONDUCTIVE LIQUID ORGANOPOLYSILOXANE.
IL67928A (en) Circuit protection devices comprising ptc conductive polymer elements
ES526676A0 (en) IMPROVEMENTS IN AN ELECTRONIC CIRCUIT ESPECIALLY LIMITING THE OUTPUT CURRENT OF AN OUTPUT TRANSISTOR.
JPS5291472A (en) Voltage detection circuit
SE7407961L (en)
KR900017197A (en) High voltage spiral resistor
GB2016208A (en) Integrated circuit including a resistive element
ES262256Y (en) AN ELECTRICAL ELEMENT OF RESISTANCE HEATING.
JPS5277684A (en) Exeternal wiring of integrated circuit
DE3580877D1 (en) ELECTRICAL CIRCUITS AND COMPONENTS.
DE69108502D1 (en) Insulating element and electrical components made of it.
JPS5481086A (en) Semiconductor integrated circuit
DE59003026D1 (en) Electrically insulating circuit carrier with integrated coolants.
SE411156B (en) KIT FOR STABILIZATION OF THE RESISTANCE OF GOLD-PLATED ELECTRICAL CONTACTS
JPS5374261A (en) Constant voltage equipment
JPS57162356A (en) Integrated circuit device
JPS5353262A (en) Manufacture of semiconductor device
ATE6972T1 (en) CIRCUIT ARRANGEMENT FOR AN ELECTRONIC DIRECT CURRENT TELEGRAPHIC TRANSMITTER.
JPS539484A (en) Integrated circuit device
JPS538139A (en) Electrophotographic light sensitive element
NO153512C (en) CONTROL CIRCUIT FOR SHUNTED VOLTAGES, AND THE USE OF IT IN ELECTRONIC TELEPHONE CIRCUITS.
JPS5338945A (en) Multiplication circuit containing field-effect transistor
JPS5217846A (en) Liquid crystal indicator
KR840004843A (en) Characteristic switching circuit