FR2412944A1 - Ensemble combine monolithique de deux transistors bipolaires complementaires - Google Patents

Ensemble combine monolithique de deux transistors bipolaires complementaires

Info

Publication number
FR2412944A1
FR2412944A1 FR7835227A FR7835227A FR2412944A1 FR 2412944 A1 FR2412944 A1 FR 2412944A1 FR 7835227 A FR7835227 A FR 7835227A FR 7835227 A FR7835227 A FR 7835227A FR 2412944 A1 FR2412944 A1 FR 2412944A1
Authority
FR
France
Prior art keywords
bipolar transistors
complementary bipolar
combined set
collector
monolithic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7835227A
Other languages
English (en)
Other versions
FR2412944B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2412944A1 publication Critical patent/FR2412944A1/fr
Application granted granted Critical
Publication of FR2412944B1 publication Critical patent/FR2412944B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7308—Schottky transistors

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Logic Circuits (AREA)

Abstract

L'INVENTION CONCERNE UN ENSEMBLE COMBINE MONOLITHIQUE DE DEUX TRANSISTORS BIPOLAIRES COMPLEMENTAIRES. DANS CET ENSEMBLE DE DEUX TRANSISTORS COMPLEMENTAIRES T, T MUNIS DE ZONES DE COLLECTEUR 6 MENAGEES DANS UNE COUCHE SEMI-CONDUCTRICE 1, LA ZONE DE COLLECTEUR 6 DU TRANSISTOR VERTICAL T EST ETENDUE AU MOYEN D'UNE COUCHE 7 POSSEDANT LE TYPE DE CONDUCTIVITE DE LA ZONE DE COLLECTEUR 6 ET A LA SURFACE DE LAQUELLE EST REALISEE L'ELECTRODE DE COLLECTEUR CONSTITUEE SOUS LA FORME D'UN CONTACT SCHOTTKY SD. APPLICATION NOTAMMENT AUX CIRCUITS MONOLITHIQUES INTEGRES A SEMI-CONDUCTEURS.
FR7835227A 1977-12-23 1978-12-14 Ensemble combine monolithique de deux transistors bipolaires complementaires Granted FR2412944A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2757762A DE2757762C2 (de) 1977-12-23 1977-12-23 Monolithische Kombination zweier komplementärer Bipolartransistoren

Publications (2)

Publication Number Publication Date
FR2412944A1 true FR2412944A1 (fr) 1979-07-20
FR2412944B1 FR2412944B1 (fr) 1982-11-19

Family

ID=6027148

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7835227A Granted FR2412944A1 (fr) 1977-12-23 1978-12-14 Ensemble combine monolithique de deux transistors bipolaires complementaires

Country Status (5)

Country Link
US (1) US4220961A (fr)
JP (1) JPS5496980A (fr)
DE (1) DE2757762C2 (fr)
FR (1) FR2412944A1 (fr)
GB (1) GB2011167B (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291322A (en) * 1979-07-30 1981-09-22 Bell Telephone Laboratories, Incorporated Structure for shallow junction MOS circuits
DE2951915A1 (de) * 1979-12-21 1981-07-02 Siemens AG, 1000 Berlin und 8000 München Integrierbare halbleiterspeicherzelle
DE3000491A1 (de) * 1980-01-08 1981-07-09 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierbare logikzelle
JPS5728352A (en) * 1980-07-28 1982-02-16 Toshiba Corp Semiconductor integrated circuit and manufacture thereof
US4908679A (en) * 1981-01-23 1990-03-13 National Semiconductor Corporation Low resistance Schottky diode on polysilicon/metal-silicide
EP0057135B1 (fr) * 1981-01-23 1985-09-04 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Diode Schottky à faible résistance sur polysilicium/siliciure de métal
US4425379A (en) * 1981-02-11 1984-01-10 Fairchild Camera & Instrument Corporation Polycrystalline silicon Schottky diode array
US4628339A (en) * 1981-02-11 1986-12-09 Fairchild Camera & Instr. Corp. Polycrystalline silicon Schottky diode array
US5148256A (en) * 1981-02-23 1992-09-15 Unisys Corporation Digital computer having an interconnect mechanism stacked above a semiconductor substrate
US4418468A (en) * 1981-05-08 1983-12-06 Fairchild Camera & Instrument Corporation Process for fabricating a logic structure utilizing polycrystalline silicon Schottky diodes
US4539742A (en) * 1981-06-22 1985-09-10 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
US4543595A (en) * 1982-05-20 1985-09-24 Fairchild Camera And Instrument Corporation Bipolar memory cell
US4624863A (en) * 1982-05-20 1986-11-25 Fairchild Semiconductor Corporation Method of fabricating Schottky diodes and electrical interconnections in semiconductor structures
DE3219598A1 (de) * 1982-05-25 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Schottky-leistungsdiode
US4843448A (en) * 1988-04-18 1989-06-27 The United States Of America As Represented By The Secretary Of The Navy Thin-film integrated injection logic
US5225359A (en) * 1990-08-17 1993-07-06 National Semiconductor Corporation Method of fabricating Schottky barrier diodes and Schottky barrier diode-clamped transistors
US5109256A (en) * 1990-08-17 1992-04-28 National Semiconductor Corporation Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication
EP0881688A1 (fr) * 1997-05-30 1998-12-02 STMicroelectronics S.r.l. Dispositif électronique latéral bipolaire du type pnp
US8168466B2 (en) * 2007-06-01 2012-05-01 Semiconductor Components Industries, Llc Schottky diode and method therefor
RU2629657C2 (ru) * 2016-02-24 2017-08-30 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводникового прибора
US11205717B2 (en) * 2016-09-30 2021-12-21 Intel Corporation Epitaxially fabricated heterojunction bipolar transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135289A (ja) * 1974-09-20 1976-03-25 Hitachi Ltd Handotaisochi

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/77 *
EXBK/78 *

Also Published As

Publication number Publication date
US4220961A (en) 1980-09-02
GB2011167B (en) 1982-03-24
DE2757762A1 (de) 1979-06-28
JPS5496980A (en) 1979-07-31
FR2412944B1 (fr) 1982-11-19
DE2757762C2 (de) 1985-03-07
GB2011167A (en) 1979-07-04

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Legal Events

Date Code Title Description
ST Notification of lapse