FR2365213A1 - Transistor bipolaire lateral et circuits utilisant ce transistor - Google Patents

Transistor bipolaire lateral et circuits utilisant ce transistor

Info

Publication number
FR2365213A1
FR2365213A1 FR7628318A FR7628318A FR2365213A1 FR 2365213 A1 FR2365213 A1 FR 2365213A1 FR 7628318 A FR7628318 A FR 7628318A FR 7628318 A FR7628318 A FR 7628318A FR 2365213 A1 FR2365213 A1 FR 2365213A1
Authority
FR
France
Prior art keywords
transistor
circuits
bipolar transistor
side bipolar
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7628318A
Other languages
English (en)
Other versions
FR2365213B1 (fr
Inventor
Gerard Nuzillat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7628318A priority Critical patent/FR2365213A1/fr
Priority to GB3900577A priority patent/GB1593063A/en
Priority to JP52113174A priority patent/JPS6028395B2/ja
Priority to DE19772742361 priority patent/DE2742361A1/de
Publication of FR2365213A1 publication Critical patent/FR2365213A1/fr
Application granted granted Critical
Publication of FR2365213B1 publication Critical patent/FR2365213B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

L'invention a pour objet un transistor bipolaire latéral. Dans le collecteur de type P est diffusée une zone de type N+. Un contact met au même potentiel la surface des collecteurs et la totalité de la zone N+. Cette disposition permet d'améliorer le gain de tels transistors. L'application s'applique à toutes les logiques intégrées utilisant de tels transistors.
FR7628318A 1976-09-21 1976-09-21 Transistor bipolaire lateral et circuits utilisant ce transistor Granted FR2365213A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7628318A FR2365213A1 (fr) 1976-09-21 1976-09-21 Transistor bipolaire lateral et circuits utilisant ce transistor
GB3900577A GB1593063A (en) 1976-09-21 1977-09-19 Bipolar lateral transistor
JP52113174A JPS6028395B2 (ja) 1976-09-21 1977-09-20 バイポ−ララテラルトランジスタ
DE19772742361 DE2742361A1 (de) 1976-09-21 1977-09-20 Bipolarer lateraler transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7628318A FR2365213A1 (fr) 1976-09-21 1976-09-21 Transistor bipolaire lateral et circuits utilisant ce transistor

Publications (2)

Publication Number Publication Date
FR2365213A1 true FR2365213A1 (fr) 1978-04-14
FR2365213B1 FR2365213B1 (fr) 1979-01-12

Family

ID=9177896

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7628318A Granted FR2365213A1 (fr) 1976-09-21 1976-09-21 Transistor bipolaire lateral et circuits utilisant ce transistor

Country Status (4)

Country Link
JP (1) JPS6028395B2 (fr)
DE (1) DE2742361A1 (fr)
FR (1) FR2365213A1 (fr)
GB (1) GB1593063A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008399A1 (fr) * 1978-08-17 1980-03-05 Siemens Aktiengesellschaft Circuit semiconducteur intégré monolithique comportant au moins un transistor latéral
FR2592525A1 (fr) * 1985-12-31 1987-07-03 Radiotechnique Compelec Procede de fabrication d'un transistor lateral integre et circuit integre le comprenant
EP0782197A1 (fr) * 1995-12-29 1997-07-02 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Dispositif électronique intégré ayant des courants parasitiques réduits et procédé correspondant

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50105209A (fr) * 1974-01-25 1975-08-19
JPS6165762U (fr) * 1984-10-03 1986-05-06

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967307A (en) * 1973-07-30 1976-06-29 Signetics Corporation Lateral bipolar transistor for integrated circuits and method for forming the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008399A1 (fr) * 1978-08-17 1980-03-05 Siemens Aktiengesellschaft Circuit semiconducteur intégré monolithique comportant au moins un transistor latéral
FR2592525A1 (fr) * 1985-12-31 1987-07-03 Radiotechnique Compelec Procede de fabrication d'un transistor lateral integre et circuit integre le comprenant
EP0228748A1 (fr) * 1985-12-31 1987-07-15 Philips Composants Procédé de fabrication d'un transistor latéral intégré et circuit intégré le comprenant
EP0782197A1 (fr) * 1995-12-29 1997-07-02 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Dispositif électronique intégré ayant des courants parasitiques réduits et procédé correspondant
US5763934A (en) * 1995-12-29 1998-06-09 Co.Ri.M.Me-Consorzio Per La Ricerca Sulla Microelectronica Nel Integrated electronic device with reduced parasitic currents, and corresponding methods

Also Published As

Publication number Publication date
GB1593063A (en) 1981-07-15
JPS5339082A (en) 1978-04-10
DE2742361C2 (fr) 1989-03-09
FR2365213B1 (fr) 1979-01-12
DE2742361A1 (de) 1978-03-23
JPS6028395B2 (ja) 1985-07-04

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