FR2400258A1 - Transistor a effet de champ et a sensibilite chimique et son procede de realisation - Google Patents

Transistor a effet de champ et a sensibilite chimique et son procede de realisation

Info

Publication number
FR2400258A1
FR2400258A1 FR7823610A FR7823610A FR2400258A1 FR 2400258 A1 FR2400258 A1 FR 2400258A1 FR 7823610 A FR7823610 A FR 7823610A FR 7823610 A FR7823610 A FR 7823610A FR 2400258 A1 FR2400258 A1 FR 2400258A1
Authority
FR
France
Prior art keywords
type
conductivity
effect
field
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7823610A
Other languages
English (en)
Other versions
FR2400258B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
BBC Brown Boveri AG Germany
Original Assignee
BBC Brown Boveri AG Switzerland
BBC Brown Boveri AG Germany
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland, BBC Brown Boveri AG Germany filed Critical BBC Brown Boveri AG Switzerland
Publication of FR2400258A1 publication Critical patent/FR2400258A1/fr
Application granted granted Critical
Publication of FR2400258B1 publication Critical patent/FR2400258B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Ceramic Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Molecular Biology (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Transistor à effet de champ formé d'un corps semiconducteur d'un premier type de conductivité et à deux zones de diffusion, c'est-à-dire une source et un drain d'un second type de conductivité et de polarité opposée à celle du premier, ces zones étant reliées à des pistes conductrices destinees à former des contacts avec des connexions. Les pistes conductrices 9, 10 sont des régions fortement dopées du second type de conductivité qui aboutissent à des régions 4 et 5 de même type de conductivité qui sont décalées par rapport à la source 6 et au drain 7, ces régions 4 et 5 traversant le corps semiconducteur 1 jusqu'à son dos sur lequel les contacts sont formés. Application en particulier aux transistors à sensibilité ionique, par exemple pour mesures de pH.
FR7823610A 1977-08-11 1978-08-10 Transistor a effet de champ et a sensibilite chimique et son procede de realisation Granted FR2400258A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772736200 DE2736200A1 (de) 1977-08-11 1977-08-11 Chemisch sensitiver feldeffekt- transistor und verfahren zur herstellung desselben

Publications (2)

Publication Number Publication Date
FR2400258A1 true FR2400258A1 (fr) 1979-03-09
FR2400258B1 FR2400258B1 (fr) 1982-11-19

Family

ID=6016147

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7823610A Granted FR2400258A1 (fr) 1977-08-11 1978-08-10 Transistor a effet de champ et a sensibilite chimique et son procede de realisation

Country Status (5)

Country Link
US (1) US4232326A (fr)
JP (1) JPS5430896A (fr)
DE (1) DE2736200A1 (fr)
FR (1) FR2400258A1 (fr)
GB (1) GB1586389A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2478880A1 (fr) * 1980-03-19 1981-09-25 Olympus Optical Co Capteur ionique et son procede de fabrication
EP0063455A1 (fr) * 1981-04-09 1982-10-27 Ciba Corning Diagnostics Corp. Procédé de fabrication de dispositifs de groupes microélectroniques scellés, chimiquement sensibles
EP0149330A1 (fr) * 1983-12-08 1985-07-24 General Signal Corporation Capteur ISFET et procédé de fabrication
EP0467479A1 (fr) * 1990-07-17 1992-01-22 Priva Agro Holding B.V. Appareil pour la mesure de la concentration d'une substance chimique dans un fluide

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2096824A (en) * 1981-04-09 1982-10-20 Sibbald Alastair Chemically sensitive field effect transistor
IT1224606B (it) * 1988-10-10 1990-10-04 Eniricerche Spa Sensore chimico monolitico a membrana ione selettiva di tipo chemfet eprocedimento per la sua realizzazione
US5068205A (en) * 1989-05-26 1991-11-26 General Signal Corporation Header mounted chemically sensitive ISFET and method of manufacture
US5202752A (en) * 1990-05-16 1993-04-13 Nec Corporation Monolithic integrated circuit device
US5625209A (en) * 1992-08-26 1997-04-29 Texas Instruments Incorporated Silicon based sensor apparatus
US5965933A (en) * 1996-05-28 1999-10-12 Young; William R. Semiconductor packaging apparatus
EP1199751A3 (fr) * 1998-06-30 2005-12-07 Micronas GmbH Agencement de puce électronique
DE19829121C2 (de) * 1998-06-30 2000-06-08 Micronas Intermetall Gmbh Anordnung mit einer Substratplatte und einem Chip
DE19861113C2 (de) * 1998-06-30 2000-11-02 Micronas Intermetall Gmbh Anordnung mit einer Substratplatte und einem Chip
US7053439B2 (en) * 2002-10-29 2006-05-30 Edwin Kan Chemoreceptive semiconductor structure
DE102014115980B4 (de) * 2014-11-03 2022-06-23 Infineon Technologies Ag Gerät zum Analysieren der Ionenkinetik in Dielektrika

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2273370A1 (en) * 1974-05-29 1975-12-26 Radiotechnique Compelec Thin layer particle sensor mfg method - uses doped material held rigidly by a semiconductor disc
US3982268A (en) * 1973-10-30 1976-09-21 General Electric Company Deep diode lead throughs

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4097314A (en) * 1976-12-30 1978-06-27 Rca Corp. Method of making a sapphire gate transistor
US4158807A (en) * 1977-04-25 1979-06-19 Massachusetts Institute Of Technology Gapped gate charge-flow transistor with a thin film sensor having two modes of conduction within the gapped gate used to sense a property of the ambient environment
US4148046A (en) * 1978-01-16 1979-04-03 Honeywell Inc. Semiconductor apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982268A (en) * 1973-10-30 1976-09-21 General Electric Company Deep diode lead throughs
FR2273370A1 (en) * 1974-05-29 1975-12-26 Radiotechnique Compelec Thin layer particle sensor mfg method - uses doped material held rigidly by a semiconductor disc

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/71 *
EXBK/76 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2478880A1 (fr) * 1980-03-19 1981-09-25 Olympus Optical Co Capteur ionique et son procede de fabrication
EP0063455A1 (fr) * 1981-04-09 1982-10-27 Ciba Corning Diagnostics Corp. Procédé de fabrication de dispositifs de groupes microélectroniques scellés, chimiquement sensibles
EP0149330A1 (fr) * 1983-12-08 1985-07-24 General Signal Corporation Capteur ISFET et procédé de fabrication
EP0467479A1 (fr) * 1990-07-17 1992-01-22 Priva Agro Holding B.V. Appareil pour la mesure de la concentration d'une substance chimique dans un fluide
WO1992001930A1 (fr) * 1990-07-17 1992-02-06 Priva Agro Holding B.V. Appareil permettant de mesurer la concentration d'un compose chimique dans un fluide

Also Published As

Publication number Publication date
US4232326A (en) 1980-11-04
JPS5430896A (en) 1979-03-07
DE2736200A1 (de) 1979-02-22
GB1586389A (en) 1981-03-18
FR2400258B1 (fr) 1982-11-19

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