FR2273370A1 - Thin layer particle sensor mfg method - uses doped material held rigidly by a semiconductor disc - Google Patents

Thin layer particle sensor mfg method - uses doped material held rigidly by a semiconductor disc

Info

Publication number
FR2273370A1
FR2273370A1 FR7418635A FR7418635A FR2273370A1 FR 2273370 A1 FR2273370 A1 FR 2273370A1 FR 7418635 A FR7418635 A FR 7418635A FR 7418635 A FR7418635 A FR 7418635A FR 2273370 A1 FR2273370 A1 FR 2273370A1
Authority
FR
France
Prior art keywords
thin layer
particle sensor
doped material
material held
held rigidly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7418635A
Other languages
French (fr)
Other versions
FR2273370B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7418635A priority Critical patent/FR2273370A1/en
Publication of FR2273370A1 publication Critical patent/FR2273370A1/en
Application granted granted Critical
Publication of FR2273370B1 publication Critical patent/FR2273370B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/129—Diode type sensors, e.g. gas sensitive Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01052—Tellurium [Te]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

The basic 'N' doped semiconductor slab (1) is etched or ground by chemical/mechanical action. The material chosen has a resistivity between 100 and 1000 ohms/cm and is set in a ring (2) of semiconductor having a resistivity of 0.001 ohms/cm to 0.1 ohms/cm. The two elements are bonded together using, preferably, some epoxy resin (5) before polymerisation. The sandwich is set in a shaped stiffening ring (8) of an insulating material having the same coefficient of expansion as the semiconductor, the lower surface of which has an inversion layer (11) and a cover layer (11) and a cover layer (12) of gold.
FR7418635A 1974-05-29 1974-05-29 Thin layer particle sensor mfg method - uses doped material held rigidly by a semiconductor disc Granted FR2273370A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7418635A FR2273370A1 (en) 1974-05-29 1974-05-29 Thin layer particle sensor mfg method - uses doped material held rigidly by a semiconductor disc

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7418635A FR2273370A1 (en) 1974-05-29 1974-05-29 Thin layer particle sensor mfg method - uses doped material held rigidly by a semiconductor disc

Publications (2)

Publication Number Publication Date
FR2273370A1 true FR2273370A1 (en) 1975-12-26
FR2273370B1 FR2273370B1 (en) 1978-11-17

Family

ID=9139407

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7418635A Granted FR2273370A1 (en) 1974-05-29 1974-05-29 Thin layer particle sensor mfg method - uses doped material held rigidly by a semiconductor disc

Country Status (1)

Country Link
FR (1) FR2273370A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2400258A1 (en) * 1977-08-11 1979-03-09 Bbc Brown Boveri & Cie FIELD-EFFECT AND CHEMICAL SENSITIVITY TRANSISTOR AND ITS EMBODIMENT PROCESS
FR2411490A1 (en) * 1977-12-08 1979-07-06 Univ Pennsylvania ELECTRICAL DEVICE CHEMOSENSITIVE STRUCTURE AND ITS MANUFACTURING PROCESS
CN106680330A (en) * 2017-01-22 2017-05-17 东南大学 Method for carrying out on-site evaluation on expansion property of expansive soil by utilizing electrical resistivity

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2400258A1 (en) * 1977-08-11 1979-03-09 Bbc Brown Boveri & Cie FIELD-EFFECT AND CHEMICAL SENSITIVITY TRANSISTOR AND ITS EMBODIMENT PROCESS
FR2411490A1 (en) * 1977-12-08 1979-07-06 Univ Pennsylvania ELECTRICAL DEVICE CHEMOSENSITIVE STRUCTURE AND ITS MANUFACTURING PROCESS
CN106680330A (en) * 2017-01-22 2017-05-17 东南大学 Method for carrying out on-site evaluation on expansion property of expansive soil by utilizing electrical resistivity
CN106680330B (en) * 2017-01-22 2019-03-19 东南大学 A method of swelled ground expansion character field evaluation is carried out with resistivity

Also Published As

Publication number Publication date
FR2273370B1 (en) 1978-11-17

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