FR2374396A1 - Composition de decapage du silicium - Google Patents
Composition de decapage du siliciumInfo
- Publication number
- FR2374396A1 FR2374396A1 FR7733078A FR7733078A FR2374396A1 FR 2374396 A1 FR2374396 A1 FR 2374396A1 FR 7733078 A FR7733078 A FR 7733078A FR 7733078 A FR7733078 A FR 7733078A FR 2374396 A1 FR2374396 A1 FR 2374396A1
- Authority
- FR
- France
- Prior art keywords
- pickling composition
- silicon
- composition
- silicon pickling
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- 238000005554 pickling Methods 0.000 title 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- -1 fluoride ions Chemical class 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 125000004430 oxygen atom Chemical group O* 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Detergent Compositions (AREA)
Abstract
Composition de décapage du silicium. Cette composition comprend des ions fluorure et des atomes d'oxygène dans une solution aqueuse dont le pH est compris entre 6 et 8,2. Application à la fabrication des dispositifs à semi-conducteurs.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75161976A | 1976-12-17 | 1976-12-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2374396A1 true FR2374396A1 (fr) | 1978-07-13 |
FR2374396B1 FR2374396B1 (fr) | 1980-08-08 |
Family
ID=25022795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7733078A Granted FR2374396A1 (fr) | 1976-12-17 | 1977-10-24 | Composition de decapage du silicium |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5376139A (fr) |
DE (1) | DE2752482A1 (fr) |
FR (1) | FR2374396A1 (fr) |
GB (1) | GB1588843A (fr) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0019468A1 (fr) * | 1979-05-18 | 1980-11-26 | Fujitsu Limited | Procédé de traitement superficiel d'un substrat semiconducteur |
EP0032174B1 (fr) * | 1979-12-20 | 1984-07-25 | Ibm Deutschland Gmbh | Procédé de dopage de corps de silicium par diffusion de bore et application de ce procédé pour la fabrication des zônes de base de transistors bipolaires |
EP0140347A2 (fr) * | 1983-10-28 | 1985-05-08 | Union Carbide Corporation | Solution fluorescente de fluorure corrosif |
EP0278628A2 (fr) * | 1987-01-27 | 1988-08-17 | Olin Corporation | Solutions d'attaque chimique de surfaces contenant du fluorure d'ammonium |
EP0499488A2 (fr) * | 1991-02-15 | 1992-08-19 | Canon Kabushiki Kaisha | Solution d'attaque pour attaquer le silicium poreux, méthode d'attaque utilisant ladite solution, et procédé de préparation d'un composant semi-conducteur utilisant ladite solution |
EP0534474A2 (fr) * | 1991-09-27 | 1993-03-31 | Canon Kabushiki Kaisha | Substrat de silicon et son procédé de fabrication |
US6171512B1 (en) | 1991-02-15 | 2001-01-09 | Canon Kabushiki Kaisha | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6022521U (ja) * | 1983-07-19 | 1985-02-16 | 横浜ゴム株式会社 | 防舷装置 |
WO2006054996A1 (fr) * | 2004-11-19 | 2006-05-26 | Honeywell International Inc. | Produits chimiques pour enlèvement sélectif pour applications semi-conductrices, procédés de fabrication et utilisations idoines |
JP5017709B2 (ja) * | 2006-09-07 | 2012-09-05 | ジルトロニック アクチエンゲゼルシャフト | シリコンウェーハのエッチング方法および半導体シリコンウェーハの製造方法 |
JP6941959B2 (ja) | 2017-03-31 | 2021-09-29 | 関東化学株式会社 | エッチング液組成物およびエッチング方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2847287A (en) * | 1956-07-20 | 1958-08-12 | Bell Telephone Labor Inc | Etching processes and solutions |
DE1080697B (de) * | 1957-08-07 | 1960-04-28 | Western Electric Co | Verfahren zur Herstellung von Halbleiterkoerpern einer Halbleiteranordnung |
FR1266612A (fr) * | 1960-06-02 | 1961-07-17 | Solutions d'attaque chimiques pour le traitement en surface des matériaux semiconducteurs | |
US3158517A (en) * | 1959-11-05 | 1964-11-24 | Telefunken Gmbh | Process for forming recesses in semiconductor bodies |
US3773578A (en) * | 1970-12-01 | 1973-11-20 | Us Army | Method of continuously etching a silicon substrate |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50341A (fr) * | 1973-05-07 | 1975-01-06 | ||
JPS509268A (fr) * | 1973-05-30 | 1975-01-30 |
-
1977
- 1977-10-24 FR FR7733078A patent/FR2374396A1/fr active Granted
- 1977-10-26 GB GB44639/77A patent/GB1588843A/en not_active Expired
- 1977-11-11 JP JP13483877A patent/JPS5376139A/ja active Granted
- 1977-11-24 DE DE19772752482 patent/DE2752482A1/de not_active Ceased
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2847287A (en) * | 1956-07-20 | 1958-08-12 | Bell Telephone Labor Inc | Etching processes and solutions |
DE1080697B (de) * | 1957-08-07 | 1960-04-28 | Western Electric Co | Verfahren zur Herstellung von Halbleiterkoerpern einer Halbleiteranordnung |
US3158517A (en) * | 1959-11-05 | 1964-11-24 | Telefunken Gmbh | Process for forming recesses in semiconductor bodies |
FR1266612A (fr) * | 1960-06-02 | 1961-07-17 | Solutions d'attaque chimiques pour le traitement en surface des matériaux semiconducteurs | |
US3773578A (en) * | 1970-12-01 | 1973-11-20 | Us Army | Method of continuously etching a silicon substrate |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0019468A1 (fr) * | 1979-05-18 | 1980-11-26 | Fujitsu Limited | Procédé de traitement superficiel d'un substrat semiconducteur |
EP0032174B1 (fr) * | 1979-12-20 | 1984-07-25 | Ibm Deutschland Gmbh | Procédé de dopage de corps de silicium par diffusion de bore et application de ce procédé pour la fabrication des zônes de base de transistors bipolaires |
EP0140347A2 (fr) * | 1983-10-28 | 1985-05-08 | Union Carbide Corporation | Solution fluorescente de fluorure corrosif |
EP0140347A3 (en) * | 1983-10-28 | 1986-06-25 | Union Carbide Corporation | Fluorescent corrosive fluoride solution |
EP0278628A2 (fr) * | 1987-01-27 | 1988-08-17 | Olin Corporation | Solutions d'attaque chimique de surfaces contenant du fluorure d'ammonium |
EP0278628A3 (en) * | 1987-01-27 | 1989-03-22 | Olin Corporation | Etching solutions containing ammonium fluoride |
EP0499488A2 (fr) * | 1991-02-15 | 1992-08-19 | Canon Kabushiki Kaisha | Solution d'attaque pour attaquer le silicium poreux, méthode d'attaque utilisant ladite solution, et procédé de préparation d'un composant semi-conducteur utilisant ladite solution |
EP0499488A3 (fr) * | 1991-02-15 | 1995-03-01 | Canon Kk | |
US5767020A (en) * | 1991-02-15 | 1998-06-16 | Canon Kabushiki Kaisha | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
US6171512B1 (en) | 1991-02-15 | 2001-01-09 | Canon Kabushiki Kaisha | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
US6238586B1 (en) | 1991-02-15 | 2001-05-29 | Canon Kabushiki Kaisha | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
US6254794B1 (en) | 1991-02-15 | 2001-07-03 | Canon Kabushiki Kaisha | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
EP0534474A2 (fr) * | 1991-09-27 | 1993-03-31 | Canon Kabushiki Kaisha | Substrat de silicon et son procédé de fabrication |
EP0534474A3 (en) * | 1991-09-27 | 1993-04-21 | Canon Kabushiki Kaisha | Si substrate and method of processing the same |
Also Published As
Publication number | Publication date |
---|---|
GB1588843A (en) | 1981-04-29 |
FR2374396B1 (fr) | 1980-08-08 |
JPS5376139A (en) | 1978-07-06 |
JPS5550112B2 (fr) | 1980-12-16 |
DE2752482A1 (de) | 1978-06-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |