FR2378355A1 - Film de transition, mince, entre un film d'aluminium et un film indium-cuivre - Google Patents

Film de transition, mince, entre un film d'aluminium et un film indium-cuivre

Info

Publication number
FR2378355A1
FR2378355A1 FR7737554A FR7737554A FR2378355A1 FR 2378355 A1 FR2378355 A1 FR 2378355A1 FR 7737554 A FR7737554 A FR 7737554A FR 7737554 A FR7737554 A FR 7737554A FR 2378355 A1 FR2378355 A1 FR 2378355A1
Authority
FR
France
Prior art keywords
film
thin
indium
copper
transition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7737554A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2378355A1 publication Critical patent/FR2378355A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

a. Moyen de connection dans le domaine des circuits réalisés en film mince, dans lequel les contacts en indium-cuivre touchent les sources et drains des transistors. b. Moyen caractérisé par des surfaces transitoires en forme de film mince en cuivre, entre les conducteurs en aluminium et les contacts de source et de drain. c. L'invention concerne la fabrication des semi-conducteurs.
FR7737554A 1977-01-26 1977-12-13 Film de transition, mince, entre un film d'aluminium et un film indium-cuivre Withdrawn FR2378355A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/762,546 US4115799A (en) 1977-01-26 1977-01-26 Thin film copper transition between aluminum and indium copper films

Publications (1)

Publication Number Publication Date
FR2378355A1 true FR2378355A1 (fr) 1978-08-18

Family

ID=25065370

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7737554A Withdrawn FR2378355A1 (fr) 1977-01-26 1977-12-13 Film de transition, mince, entre un film d'aluminium et un film indium-cuivre

Country Status (6)

Country Link
US (1) US4115799A (fr)
JP (1) JPS5394188A (fr)
DE (1) DE2802822A1 (fr)
FR (1) FR2378355A1 (fr)
GB (1) GB1558055A (fr)
NL (1) NL7714469A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2474763A1 (fr) * 1979-12-13 1981-07-31 Energy Conversion Devices Inc Transistor a film mince

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140781A (ja) * 1982-02-17 1983-08-20 株式会社日立製作所 画像表示装置
US5019807A (en) * 1984-07-25 1991-05-28 Staplevision, Inc. Display screen
FR2593630B1 (fr) * 1986-01-27 1988-03-18 Maurice Francois Ecran d'affichage a matrice active a resistance de drain et procedes de fabrication de cet ecran
JPS6319876A (ja) * 1986-07-11 1988-01-27 Fuji Xerox Co Ltd 薄膜トランジスタ装置
US5032883A (en) * 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
US5229644A (en) * 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
US5166085A (en) * 1987-09-09 1992-11-24 Casio Computer Co., Ltd. Method of manufacturing a thin film transistor
US5327001A (en) * 1987-09-09 1994-07-05 Casio Computer Co., Ltd. Thin film transistor array having single light shield layer over transistors and gate and drain lines
US4990460A (en) * 1989-01-27 1991-02-05 Nec Corporation Fabrication method for thin film field effect transistor array suitable for liquid crystal display

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3313959A (en) * 1966-08-08 1967-04-11 Hughes Aircraft Co Thin-film resonance device
GB1161647A (en) * 1967-08-04 1969-08-13 Rca Corp Thin Film Field-Effect Solid State Devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3483038A (en) * 1967-01-05 1969-12-09 Rca Corp Integrated array of thin-film photovoltaic cells and method of making same
JPS4913914B1 (fr) * 1969-12-25 1974-04-03
US3840695A (en) * 1972-10-10 1974-10-08 Westinghouse Electric Corp Liquid crystal image display panel with integrated addressing circuitry
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
US4000842A (en) * 1975-06-02 1977-01-04 National Semiconductor Corporation Copper-to-gold thermal compression gang bonding of interconnect leads to semiconductive devices
US4040073A (en) * 1975-08-29 1977-08-02 Westinghouse Electric Corporation Thin film transistor and display panel using the transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3313959A (en) * 1966-08-08 1967-04-11 Hughes Aircraft Co Thin-film resonance device
GB1161647A (en) * 1967-08-04 1969-08-13 Rca Corp Thin Film Field-Effect Solid State Devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2474763A1 (fr) * 1979-12-13 1981-07-31 Energy Conversion Devices Inc Transistor a film mince

Also Published As

Publication number Publication date
JPS5394188A (en) 1978-08-17
DE2802822C2 (fr) 1987-08-13
US4115799A (en) 1978-09-19
NL7714469A (nl) 1978-07-28
GB1558055A (en) 1979-12-19
JPS628953B2 (fr) 1987-02-25
DE2802822A1 (de) 1978-07-27

Similar Documents

Publication Publication Date Title
FR2360174A1 (fr) Boitier de circuit integre et son procede de fabrication
JPS5435689A (en) Semiconductor integrated circuit device
FR2378355A1 (fr) Film de transition, mince, entre un film d'aluminium et un film indium-cuivre
IT7820179A0 (it) Metodo di regolazione delle correnti di dispersione di transistori ad effetto di campo, aporta isolata, a silicio su zaffiro.
FR2393473A1 (fr) Dispositif de commutation, en particulier fonctionnant par effet de proximite, muni d'un boitier perfectionne
FR2364564A1 (fr) Circuit de compensation du courant de decalage dans un demodulateur synchrone a multiplieur, notamment un demodulateur stereophonique multiplex
JPS53128251A (en) Source follwoer circuit
JPS5439573A (en) Compound semiconductor device
BE759308A (fr) Circuit hydraulique d'actionnement d'engin a deux instruments de travail, notamment de terrassement
IT7923489A0 (it) Miglioramenti della conduttivita'elettrica di leghe di alluminio per aggiunta di ittrio.
JPS5310283A (en) 54)mos type semiconductor integrated circuit
FR2320015A1 (fr) Circuit de conference pour centraux telephoniques de commutation de type numerique
IT7824434A0 (it) Disposizione circuitale di transistori connessi in serie.
JPS5238889A (en) Vertical junction type field effect transistor
DE68905210T2 (de) Hochstrom-duennfilmtransistor.
JPS5320776A (en) Production of metal insulation film semiconductor device
FR2377123A1 (fr) Circuit logique integre
BE858671A (fr) Perfectionnements aux etages de commutation electroniques
SU655856A1 (ru) Торцевое уплотнение
JPS53100780A (en) Complementary type mos transistor
JPS5214363A (en) Can-sealed power transistor
JPS5423478A (en) Semiconductor device of field effect type
FR2506541A1 (fr) Amplificateur a transistor fonctionnant en hyperfrequence en regime impulsionnel
JPS5439580A (en) Semiconductor device
JPS5432274A (en) Junction type field effect transistor

Legal Events

Date Code Title Description
ST Notification of lapse
AR Application made for restoration
DI Inadmissibility of an action of restoration