GB1588843A - Etching composition - Google Patents
Etching composition Download PDFInfo
- Publication number
- GB1588843A GB1588843A GB44639/77A GB4463977A GB1588843A GB 1588843 A GB1588843 A GB 1588843A GB 44639/77 A GB44639/77 A GB 44639/77A GB 4463977 A GB4463977 A GB 4463977A GB 1588843 A GB1588843 A GB 1588843A
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- Prior art keywords
- composition
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- silicon
- ammonium
- etching
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- 238000005530 etching Methods 0.000 title claims description 51
- 239000000203 mixture Substances 0.000 title claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000000243 solution Substances 0.000 claims description 38
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 14
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 13
- 239000006172 buffering agent Substances 0.000 claims description 10
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical group [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- -1 ammonium fluoride compound Chemical class 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 125000002084 dioxo-lambda(5)-bromanyloxy group Chemical group *OBr(=O)=O 0.000 claims description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000007800 oxidant agent Substances 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 230000002378 acidificating effect Effects 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 241001311547 Patina Species 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 150000002221 fluorine Chemical class 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical group [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 239000008366 buffered solution Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Detergent Compositions (AREA)
Description
(54) AN ETCHING COMPOSITION
(71) We, INTERNATIONAL BUSINESS MACHINES CORPORATION, a Corporation organized and existing under the laws of the State of New York in the United States of
America, of Armonk, New York 10504, United States of America do hereby declare the invention for which we pray that a patent may be granted to us, and the method by which it is to be performed, to be particularly described in and by the following statement:
This invention relates to a silicon etching composition.
Conventional silicon etchants are classified as acidic or basic. Acidic etchants include solutions of nitric acid and hydrofluoric acid. Acidic silicon etchants employ a strong oxidizing agent which produce etching rates too fast for good control. Acidic silicon etchants are generally non-selective between silicon and phosphosilicate glass (PSG), and frequently etch PSG at a much faster rate than silicon. The strong oxidant present results in the uncontrolled formation of silicon dioxide layer on the silicon which results in extended exposure of uncovered surfaces to the etchant thereby resulting in a pitted surface. On the other hand, conventional basic silicon etchants generally contain a basic oxidant and a complexing agent which attacks organic photresists, therefore requiring the necessity of an oxide mask. One of the disadvantages of an oxide mask is that it leaves a "shelf" at the edges of the etched region which can result in shorting and occlusion problems.
According to the invention there is provided a silicon etching composition, comprising an ammonium fluoride compound R4NHyFy+l, where y equals 0 or 1 and R is an organic radical or a hydrogen radical, and either oxygen or a compound capable of providing oxygen atoms, said solution being maintained at a pH from 6 to 8.2.
The resulting etching solution preferentially etches silicon with respect to phosphosilicate glass, will not attack organic photoresist, does not result in silicon surface pitting, and has soluble reaction products.
The invention will now be described by way of example with reference to the accompanying drawings, in which:
Figure 1A is a graphical illustration of the etching rate for silicon in an etching solution of ammonium fluoride and hydrogen peroxide verses quantity of buffering agents, ammonium hydrogen phosphate;
Figure 1B is a graphical illustration of the etching rate for SiO2 and PSG in an etching solution of ammonium fluoride and hydrogen peroxide verses quantity of buffering agents, ammonium hydrogen phosphate;
Figure 2 is a graphical illustration of the relative etching rate of silicon and phosphosilicate glass over a pH range illustrating the relatively enhanced etching rate of silicon with respect to PSG for a relatively neutral pH for the etching solution; and
Figure 3 is a graphical representation of the relative etching rates of silicon, phosphosilicate glass, and silicon dioxide at various temperatures for one embodiment of the etching solution composed of one part ammonium fluoride, one part hydrogen peroxide to one part water.
In its broadest concept, the inventive silicon etchant solution is an aqueous solution of fluoride ions and a source of oxygen atoms maintained at a relatively neutral pH of from 6 to 8.2. The mechanism for the etching reaction is as follows. A silicon surface exposed to the ambient normally acquires patina of silicon dioxide. By immersing such a silicon surface in an aqueous solution of a fluoride ion, the fluoride ion combines with the silicon dioxide patina yielding a silicon hexafluoride reaction product which is soluble in water such as is shown in the following Equation 1.
After the silicon surface has been exposed, a source of oxygen atoms in the aqueous solution yields oxygen which combines with the silicon yielding a silicon oxide intermediate compound such as is shown in the following Equation 2.
lhe silicon oxide intermediate compound then reacts with the fluoride ions in the aqueous solution yielding once again, silicon hexafluoride as is shown in the following
Equation 3.
Thus, the etching of the silicon surface proceeds. The etching rate of the silicon as a function of pH of the solution is illustrated in Figure 2, wherein, to a 100 ml solution of 1 to 1 ammonium fluoride and hydrogen peroxide there was added a 25 ml solution of ammonium hydrogen phosphate, progressively reducing the pH of the etching solution. It is seen that the etching rate for the silicon increases as the pH of the solution decreases with a range of from 8.2 to 6.
Phosphosilicate glass is etched in the inventive etching solution by the following mechanism. Phosphosilicate glass can be represented as in Equation 4.
SiO2 P205, y = .02 - .06 (4)
Fluoride ions react with the phosphosilicate glass as expressed in Equation 4, so as to yield silicon hexafluoride directly, as is shown in Equation 5.
No source of oxygen atoms is necessary in the mechanism for etching the phosphosilicate glass. Figure 1B illustrates the etching rate of phosphosilicate glass in an etching solution similar to that used for Figure 1A without the necessity of the presence of hydrogen peroxide, illustrating the increased etching rate of phosphosilicate glass as the pH is reduced by the addition of ammonium hydrogen phosphate. The addition of hydrogen peroxide to the aqueous solution of ammonium fluoride will not affect the etching rate of phosphosilicate glass.
Figure 2 illustrates the relative etching rate for silicon and phosphosilicate glass over a broad range of pH values for an etching solution of ammonium fluoride and hydrogen peroxide. It is to be noted that the relative etching rate of PSG is reduced to less than that for silicon at a pH value of approximately 6 and that practical etching rates for the silicon, which now exceeds that for PSG, extend from a pH of about 6 up to a pH of about approximately 8.2. Figure 3 is a detailed illustration of the relative etching rates of silicon as shown by the dot symbol, of PSG as shown by the x symbol and for silicon dioxide as shown by the circle symbol.
The approximate proportion of fluoride ions to oxygen atoms necessary for the silicon etching process, whose mechanism is denoted in equations 2 and 3 above, is approximately six parts of fluoride ions per two part oxygen atom.
In the ammonium fluoride compound having the generalized formula R4NHyFy+l where y equals zero or one and R can be an organic radical or a hydrogen radical, the four organic radicals need not be identical but can be drawn from two or more different substituents.
Generally this composition can be characterized as a quaternary ammonium hydrofluoride.
Another possible type of fluorine salt can be a simple quaternary ammonium fluoride of the generalized composition R4NF where R, once again can be an organic radical or hydrogen radical and the organic radicals need not all be identical.
Suitable oxygen containing oxidants which can be employed in the etching formulation can include hydrogen peroxide, gaseous oxygen, gaseous ozone.
Still other suitable oxygen containing oxidants can include: H2BO3-, CH3COO-, H2AsO4-, HAsO42-, As043-, NO2-, So32-, H2PO4-, HPo42-, PO43-, S042-, C032-, HCO3-, HCOO-, Cl04-, OCI- C6H5COO-, MnO4-, Cr2O,-, IO3-, BrO3-, Hf-citrate-, H-citrate-, citrate3-, oxalate2- tartrate2-, malonate2-, succinate2-, or
phthalate2- radical.
The most suitable solvent for the reaction product silicon hexafluoride is water.
However, the surface tension of the gaseous reaction products in the product can be modified by the addition of suitable alcohol such as isopropyl alcohol.
The pH value of the solution must be maintained between a value of 6 and the value of 8.2 illustrated in Figure 2 so as to maintain an enhanced etching rate of silicon with respect of that for phosphosilicate glass. The means for adjusting the pH to the range of between 6 and 8.2 is by the addition of the suitable buffering agent which is optional. For those combinations of the fluorine salt and the oxygen containing oxidant which have a pH between 6 and 8.2, no buffering agent will be necessary. Suitable buffering agents can be for example, ammonium hydrogen phosphate which, as is shown in Figures 2A and 2B, can be added to modify the pH of the solution.
Still other buffer solutions having the pH of between 5 and 9 can be employed to bring basic or acidic etching solutions, respectively, into the desirable pH range of between 6 and 8.2.
The following are examples of etching compositions and their resulting etching rates for silicon and phosphosilicate glass.
Example 1
An aqueous solution of ammonium fluoride and hydrogen peroxide containing one part 40% concentrated ammonium fluoride, one part 30% concentrated hydrogen peroxide to one part water is prepared. The resulting solution has a pH of between 8.0 and 8.2. Thus, no additional buffering agent is required. A silicon surface having phosphosilicate glass structures thereon is etched at a temperature of approximately 60"C. The relative etching rates are approximately 300A per minute for silicon and approximately 180A per minute for phosphosilicate glass.
Example 2
The solution of Example 1 can be buffered by the addition of 30 grams of ammonium hydrogen phosphate to one liter of the solution of Example 1 to adjust the pH thereof to between 6.7 and 7.2. The resulting etching rate for silicon at 40"C is 1,000 per minute and that for PSG at 40"C is 200A per minute. It is seen that the silicon etching rate is approximately five times that of phosphosilicate glass for this buffered solution at this temperature.
Example 3
The pH solution described in Example 2 can be brought to almost exactly neutrality of the pH of approximately 7.2 by the addition of a small amount of concentration ammonium hydroxide. For example, 10 ml of concentrated ammonium hydroxide is added to one liter of the solution described in Example 2, which yields an etch rate for silicon at 40"C at 800A per minute and a corresponding etch rate of phosphosilicate glass at 400C of 150A per minute.
Example 4
In the compositions of other Examples 1, 2 or 3, the oxidant hydrogen peroxide can have substituted for it a gaseous oxygen or ozone which is bubbled into the solution by a conventional bubbler. The advantage of using a bubbler as the source of gaseous oxygen or ozone is that over a long etching period, as for example, approximately four hours, conducted at a relatively high temperature of above approximately 60"C, the hydrogen peroxide has a tendency to dissociate itself and therefore its concentration can vary. By using a bubbler, the concentration of the oxygen reactant can be maintained at a relatively constant level over the entire duration of the etching process.
Example 5
Each of the solutions of Examples 1, 2 or 4 can have the ammonium fluoride reactant substituted by ammonium hydrofluoride.
The resulting etchant has an enhanced etching rate for silicon over that for phosphosilicate glass, does not attack organic photoresists, does not result in silicon surface pitting, and has soluble reaction products, all advantages which are important to obtaining a high degree of control over the silicon etching process.
WHAT WE CLAIM IS:
1. A silicon etching composition, comprising an ammonium fluoride compound
R4NHyFy+1, where y equals 0 or 1 and R is an organic radical or a hydrogen radical, and either oxygen or a compound capable of providing oxygen atoms, said solution being maintained at a pH from 6 to 8.2.
2. A composition as claimed in claim 1, wherein said oxygen atoms are provided by hydrogen peroxide.
3. A composition as claimed in claim 1, wherein said oxygen atoms are derived from gaseous oxygen or ozone.
4. A composition as claimed in claim 1, wherein said oxygen atoms are derived from oxygen containing compound having HBO,-, CH3COO- H2AsO4, HAsO42- As043-, NO2-, S0,2-, H2pO41-, HPO42-, PO43-, SO4, CO3--, HCO-, HCOO-, CIO4-,
OCI-, C6HsCOO-, MnO4, Cr2O7-, IO-. BrO3-, H2- citrate-, H-citrate-, citrate- -, oxalate 2-, tartrate2- malonate2-, succinate2- or phthalate2- radical.
5. A composition as claimed in any one of the preceding claims, including a buffering agent to control the pH of the etching solution between a value of 6 and 8.2.
6. A composition as claimed in claim 5, wherein said buffering agent is ammonium hydrogen phosphate or a solution of ammonium hydrogen phosphate and ammonium hydroxide.
7. A composition as claimed in claim 1, wherein said solution includes two parts of 40% concentrated ammonium fluoride, two parts of 30% hydrogen peroxide, and one part water.
8. A composition as claimed in claim 7, including monobasic ammonium phosphate.
9. A composition as claimed in claim 1, wherein said solution includes two parts 40% concentrated ammonium fluoride, two parts 30% hydrogen peroxide, and one part of a solution consisting of X percent of an aqueous solution of 23 grams of monobasic ammonium phosphate per 100 ml of water and Y percent of water, where X + Y = 100.
10. A silicon etching composition substantially as hereinbefore described in any one of the above examples.
**WARNING** end of DESC field may overlap start of CLMS **.
Claims (10)
1. A silicon etching composition, comprising an ammonium fluoride compound
R4NHyFy+1, where y equals 0 or 1 and R is an organic radical or a hydrogen radical, and either oxygen or a compound capable of providing oxygen atoms, said solution being maintained at a pH from 6 to 8.2.
2. A composition as claimed in claim 1, wherein said oxygen atoms are provided by hydrogen peroxide.
3. A composition as claimed in claim 1, wherein said oxygen atoms are derived from gaseous oxygen or ozone.
4. A composition as claimed in claim 1, wherein said oxygen atoms are derived from oxygen containing compound having HBO,-, CH3COO- H2AsO4, HAsO42- As043-, NO2-, S0,2-, H2pO41-, HPO42-, PO43-, SO4, CO3--, HCO-, HCOO-, CIO4-,
OCI-, C6HsCOO-, MnO4, Cr2O7-, IO-. BrO3-, H2- citrate-, H-citrate-, citrate- -, oxalate 2-, tartrate2- malonate2-, succinate2- or phthalate2- radical.
5. A composition as claimed in any one of the preceding claims, including a buffering agent to control the pH of the etching solution between a value of 6 and 8.2.
6. A composition as claimed in claim 5, wherein said buffering agent is ammonium hydrogen phosphate or a solution of ammonium hydrogen phosphate and ammonium hydroxide.
7. A composition as claimed in claim 1, wherein said solution includes two parts of 40% concentrated ammonium fluoride, two parts of 30% hydrogen peroxide, and one part water.
8. A composition as claimed in claim 7, including monobasic ammonium phosphate.
9. A composition as claimed in claim 1, wherein said solution includes two parts 40% concentrated ammonium fluoride, two parts 30% hydrogen peroxide, and one part of a solution consisting of X percent of an aqueous solution of 23 grams of monobasic ammonium phosphate per 100 ml of water and Y percent of water, where X + Y = 100.
10. A silicon etching composition substantially as hereinbefore described in any one of the above examples.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75161976A | 1976-12-17 | 1976-12-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1588843A true GB1588843A (en) | 1981-04-29 |
Family
ID=25022795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB44639/77A Expired GB1588843A (en) | 1976-12-17 | 1977-10-26 | Etching composition |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5376139A (en) |
| DE (1) | DE2752482A1 (en) |
| FR (1) | FR2374396A1 (en) |
| GB (1) | GB1588843A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1824945A1 (en) * | 2004-11-19 | 2007-08-29 | Honeywell International Inc. | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
| EP1898454A3 (en) * | 2006-09-07 | 2008-06-04 | Siltronic AG | Alkaline etching solution for semiconductor wafer and alkaline etching method |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55153338A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Surface treatment of semiconductor substrate |
| DE2951292A1 (en) * | 1979-12-20 | 1981-07-02 | Ibm Deutschland Gmbh, 7000 Stuttgart | METHOD FOR DOPING SILICON BODIES BY DIFFUSING BOR |
| JPS6022521U (en) * | 1983-07-19 | 1985-02-16 | 横浜ゴム株式会社 | fender |
| US4536322A (en) * | 1983-10-28 | 1985-08-20 | Union Carbide Corporation | Fluorescent corrosive fluoride solution |
| CA1313612C (en) * | 1987-01-27 | 1993-02-16 | Michael Scardera | Etching solutions containing ammonium fluoride |
| MY114349A (en) * | 1991-02-15 | 2002-10-31 | Canon Kk | Etching solution for etching porous silicon, etching method using the etching solution and method of prepa- ring semiconductor member using the etching solution |
| US6171512B1 (en) | 1991-02-15 | 2001-01-09 | Canon Kabushiki Kaisha | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
| DE69232347T2 (en) * | 1991-09-27 | 2002-07-11 | Canon K.K., Tokio/Tokyo | Process for treating a silicon substrate |
| JP6941959B2 (en) | 2017-03-31 | 2021-09-29 | 関東化学株式会社 | Etching liquid composition and etching method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2847287A (en) * | 1956-07-20 | 1958-08-12 | Bell Telephone Labor Inc | Etching processes and solutions |
| DE1287009C2 (en) * | 1957-08-07 | 1975-01-09 | Western Electric Co. Inc., New York, N.Y. (V.St.A.) | Process for the production of semiconducting bodies |
| NL257610A (en) * | 1959-11-05 | |||
| FR1266612A (en) * | 1960-06-02 | 1961-07-17 | Etching solutions for the surface treatment of semiconductor materials | |
| US3773578A (en) * | 1970-12-01 | 1973-11-20 | Us Army | Method of continuously etching a silicon substrate |
| JPS50341A (en) * | 1973-05-07 | 1975-01-06 | ||
| JPS509268A (en) * | 1973-05-30 | 1975-01-30 |
-
1977
- 1977-10-24 FR FR7733078A patent/FR2374396A1/en active Granted
- 1977-10-26 GB GB44639/77A patent/GB1588843A/en not_active Expired
- 1977-11-11 JP JP13483877A patent/JPS5376139A/en active Granted
- 1977-11-24 DE DE19772752482 patent/DE2752482A1/en not_active Ceased
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1824945A1 (en) * | 2004-11-19 | 2007-08-29 | Honeywell International Inc. | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
| EP1824945A4 (en) * | 2004-11-19 | 2008-08-06 | Honeywell Int Inc | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
| EP1898454A3 (en) * | 2006-09-07 | 2008-06-04 | Siltronic AG | Alkaline etching solution for semiconductor wafer and alkaline etching method |
| US7780868B2 (en) | 2006-09-07 | 2010-08-24 | Siltronic Ag | Alkaline etching solution for semiconductor wafers and alkaline etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2752482A1 (en) | 1978-06-22 |
| JPS5550112B2 (en) | 1980-12-16 |
| JPS5376139A (en) | 1978-07-06 |
| FR2374396B1 (en) | 1980-08-08 |
| FR2374396A1 (en) | 1978-07-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |