JPS5496980A - Complementary bipolar transistor device - Google Patents
Complementary bipolar transistor deviceInfo
- Publication number
- JPS5496980A JPS5496980A JP16091278A JP16091278A JPS5496980A JP S5496980 A JPS5496980 A JP S5496980A JP 16091278 A JP16091278 A JP 16091278A JP 16091278 A JP16091278 A JP 16091278A JP S5496980 A JPS5496980 A JP S5496980A
- Authority
- JP
- Japan
- Prior art keywords
- bipolar transistor
- transistor device
- complementary bipolar
- complementary
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000295 complement effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7308—Schottky transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2757762A DE2757762C2 (de) | 1977-12-23 | 1977-12-23 | Monolithische Kombination zweier komplementärer Bipolartransistoren |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5496980A true JPS5496980A (en) | 1979-07-31 |
Family
ID=6027148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16091278A Pending JPS5496980A (en) | 1977-12-23 | 1978-12-21 | Complementary bipolar transistor device |
Country Status (5)
Country | Link |
---|---|
US (1) | US4220961A (ja) |
JP (1) | JPS5496980A (ja) |
DE (1) | DE2757762C2 (ja) |
FR (1) | FR2412944A1 (ja) |
GB (1) | GB2011167B (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4291322A (en) * | 1979-07-30 | 1981-09-22 | Bell Telephone Laboratories, Incorporated | Structure for shallow junction MOS circuits |
DE2951915A1 (de) * | 1979-12-21 | 1981-07-02 | Siemens AG, 1000 Berlin und 8000 München | Integrierbare halbleiterspeicherzelle |
DE3000491A1 (de) * | 1980-01-08 | 1981-07-09 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierbare logikzelle |
JPS5728352A (en) * | 1980-07-28 | 1982-02-16 | Toshiba Corp | Semiconductor integrated circuit and manufacture thereof |
DE3265928D1 (en) * | 1981-01-23 | 1985-10-10 | Fairchild Camera Instr Co | Low resistance schottky diode on polysilicon/metal-silicide |
US4908679A (en) * | 1981-01-23 | 1990-03-13 | National Semiconductor Corporation | Low resistance Schottky diode on polysilicon/metal-silicide |
US4425379A (en) * | 1981-02-11 | 1984-01-10 | Fairchild Camera & Instrument Corporation | Polycrystalline silicon Schottky diode array |
US4628339A (en) * | 1981-02-11 | 1986-12-09 | Fairchild Camera & Instr. Corp. | Polycrystalline silicon Schottky diode array |
US5148256A (en) * | 1981-02-23 | 1992-09-15 | Unisys Corporation | Digital computer having an interconnect mechanism stacked above a semiconductor substrate |
US4418468A (en) * | 1981-05-08 | 1983-12-06 | Fairchild Camera & Instrument Corporation | Process for fabricating a logic structure utilizing polycrystalline silicon Schottky diodes |
US4539742A (en) * | 1981-06-22 | 1985-09-10 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
US4543595A (en) * | 1982-05-20 | 1985-09-24 | Fairchild Camera And Instrument Corporation | Bipolar memory cell |
US4624863A (en) * | 1982-05-20 | 1986-11-25 | Fairchild Semiconductor Corporation | Method of fabricating Schottky diodes and electrical interconnections in semiconductor structures |
DE3219598A1 (de) * | 1982-05-25 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Schottky-leistungsdiode |
US4843448A (en) * | 1988-04-18 | 1989-06-27 | The United States Of America As Represented By The Secretary Of The Navy | Thin-film integrated injection logic |
US5109256A (en) * | 1990-08-17 | 1992-04-28 | National Semiconductor Corporation | Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication |
US5225359A (en) * | 1990-08-17 | 1993-07-06 | National Semiconductor Corporation | Method of fabricating Schottky barrier diodes and Schottky barrier diode-clamped transistors |
EP0881688A1 (en) * | 1997-05-30 | 1998-12-02 | STMicroelectronics S.r.l. | PNP lateral bipolar electronic device |
US8168466B2 (en) * | 2007-06-01 | 2012-05-01 | Semiconductor Components Industries, Llc | Schottky diode and method therefor |
RU2629657C2 (ru) * | 2016-02-24 | 2017-08-30 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Способ изготовления полупроводникового прибора |
WO2018063319A1 (en) * | 2016-09-30 | 2018-04-05 | Intel Corporation | Epitaxially fabricated heterojunction bipolar transistors |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5135289A (ja) * | 1974-09-20 | 1976-03-25 | Hitachi Ltd | Handotaisochi |
-
1977
- 1977-12-23 DE DE2757762A patent/DE2757762C2/de not_active Expired
-
1978
- 1978-12-14 FR FR7835227A patent/FR2412944A1/fr active Granted
- 1978-12-19 US US05/971,007 patent/US4220961A/en not_active Expired - Lifetime
- 1978-12-20 GB GB7849339A patent/GB2011167B/en not_active Expired
- 1978-12-21 JP JP16091278A patent/JPS5496980A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5135289A (ja) * | 1974-09-20 | 1976-03-25 | Hitachi Ltd | Handotaisochi |
Also Published As
Publication number | Publication date |
---|---|
GB2011167A (en) | 1979-07-04 |
DE2757762A1 (de) | 1979-06-28 |
FR2412944B1 (ja) | 1982-11-19 |
DE2757762C2 (de) | 1985-03-07 |
FR2412944A1 (fr) | 1979-07-20 |
GB2011167B (en) | 1982-03-24 |
US4220961A (en) | 1980-09-02 |
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