JPS5470778A - Fet transistor - Google Patents

Fet transistor

Info

Publication number
JPS5470778A
JPS5470778A JP10009278A JP10009278A JPS5470778A JP S5470778 A JPS5470778 A JP S5470778A JP 10009278 A JP10009278 A JP 10009278A JP 10009278 A JP10009278 A JP 10009278A JP S5470778 A JPS5470778 A JP S5470778A
Authority
JP
Japan
Prior art keywords
fet transistor
fet
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10009278A
Other languages
Japanese (ja)
Inventor
Andoriyuu Sureimeekaa Nikorasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Handel und Investments AG
Original Assignee
Plessey Handel und Investments AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Handel und Investments AG filed Critical Plessey Handel und Investments AG
Publication of JPS5470778A publication Critical patent/JPS5470778A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP10009278A 1977-08-19 1978-08-18 Fet transistor Pending JPS5470778A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3486477 1977-08-19

Publications (1)

Publication Number Publication Date
JPS5470778A true JPS5470778A (en) 1979-06-06

Family

ID=10370862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10009278A Pending JPS5470778A (en) 1977-08-19 1978-08-18 Fet transistor

Country Status (2)

Country Link
JP (1) JPS5470778A (en)
DE (1) DE2836268A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55161555A (en) * 1979-06-05 1980-12-16 Sumitomo Electric Ind Ltd Continuous casting method
JPH01214056A (en) * 1988-02-22 1989-08-28 Toshiba Corp Semiconductor device and usage thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2936998B2 (en) * 1994-03-15 1999-08-23 日本電気株式会社 Frequency converter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55161555A (en) * 1979-06-05 1980-12-16 Sumitomo Electric Ind Ltd Continuous casting method
JPH01214056A (en) * 1988-02-22 1989-08-28 Toshiba Corp Semiconductor device and usage thereof
JPH0770733B2 (en) * 1988-02-22 1995-07-31 株式会社東芝 Semiconductor device and method of using the same

Also Published As

Publication number Publication date
DE2836268A1 (en) 1979-03-01

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