JPS5438776A - Fet - Google Patents

Fet

Info

Publication number
JPS5438776A
JPS5438776A JP9266578A JP9266578A JPS5438776A JP S5438776 A JPS5438776 A JP S5438776A JP 9266578 A JP9266578 A JP 9266578A JP 9266578 A JP9266578 A JP 9266578A JP S5438776 A JPS5438776 A JP S5438776A
Authority
JP
Japan
Prior art keywords
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9266578A
Other languages
Japanese (ja)
Other versions
JPS6019152B2 (en
Inventor
Edowaado Beirushiyutain Kenesu
Narandasu Kotetsu Haritsushiyu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5438776A publication Critical patent/JPS5438776A/en
Publication of JPS6019152B2 publication Critical patent/JPS6019152B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP53092665A 1977-08-31 1978-07-31 field effect transistor Expired JPS6019152B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82939377A 1977-08-31 1977-08-31
US829393 1977-08-31

Publications (2)

Publication Number Publication Date
JPS5438776A true JPS5438776A (en) 1979-03-23
JPS6019152B2 JPS6019152B2 (en) 1985-05-14

Family

ID=25254411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53092665A Expired JPS6019152B2 (en) 1977-08-31 1978-07-31 field effect transistor

Country Status (2)

Country Link
EP (1) EP0000883B1 (en)
JP (1) JPS6019152B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197130A (en) * 1982-05-12 1983-11-16 Akatake Eng Kk Apparatus for quantitatively feeding powder
JPS58197131A (en) * 1982-05-12 1983-11-16 Akatake Eng Kk Apparatus for quantitatively feeding powder
JPH01181470A (en) * 1988-01-08 1989-07-19 Mitsubishi Electric Corp Mos type field effect transistor
JP2008508715A (en) * 2004-07-30 2008-03-21 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Self-biased transistor structure and SRAM cell

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225895A (en) * 1989-12-20 1993-07-06 Sanyo Electric Co., Ltd. Velocity-modulation transistor with quantum well wire layer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5280782A (en) * 1975-12-27 1977-07-06 Sony Corp Semiconductor device
JPS53141585A (en) * 1977-05-16 1978-12-09 Nec Corp Manufacture of insulating gate field effect type semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299194A (en) * 1962-10-15
US4021835A (en) * 1974-01-25 1977-05-03 Hitachi, Ltd. Semiconductor device and a method for fabricating the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5280782A (en) * 1975-12-27 1977-07-06 Sony Corp Semiconductor device
JPS53141585A (en) * 1977-05-16 1978-12-09 Nec Corp Manufacture of insulating gate field effect type semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197130A (en) * 1982-05-12 1983-11-16 Akatake Eng Kk Apparatus for quantitatively feeding powder
JPS58197131A (en) * 1982-05-12 1983-11-16 Akatake Eng Kk Apparatus for quantitatively feeding powder
JPS6335532B2 (en) * 1982-05-12 1988-07-15 Akatake Eng Co Ltd
JPS6341814B2 (en) * 1982-05-12 1988-08-18 Akatake Eng Co Ltd
JPH01181470A (en) * 1988-01-08 1989-07-19 Mitsubishi Electric Corp Mos type field effect transistor
JP2008508715A (en) * 2004-07-30 2008-03-21 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Self-biased transistor structure and SRAM cell

Also Published As

Publication number Publication date
JPS6019152B2 (en) 1985-05-14
EP0000883B1 (en) 1980-05-28
EP0000883A1 (en) 1979-03-07

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