FR2406849A1 - Circuit de polarisation a courant constant - Google Patents

Circuit de polarisation a courant constant

Info

Publication number
FR2406849A1
FR2406849A1 FR7829950A FR7829950A FR2406849A1 FR 2406849 A1 FR2406849 A1 FR 2406849A1 FR 7829950 A FR7829950 A FR 7829950A FR 7829950 A FR7829950 A FR 7829950A FR 2406849 A1 FR2406849 A1 FR 2406849A1
Authority
FR
France
Prior art keywords
constant current
transistor
polarization circuit
current polarization
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7829950A
Other languages
English (en)
Other versions
FR2406849B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Handel und Investments AG
Original Assignee
Plessey Handel und Investments AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Handel und Investments AG filed Critical Plessey Handel und Investments AG
Publication of FR2406849A1 publication Critical patent/FR2406849A1/fr
Application granted granted Critical
Publication of FR2406849B1 publication Critical patent/FR2406849B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—Dc amplifiers in which all stages are dc-coupled
    • H03F3/343—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—Dc amplifiers in which all stages are dc-coupled
    • H03F3/343—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
    • H03F3/347—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection

Abstract

L'invention concerne un circuit de polarisation à courant constant Elle se rapporte à un circuit ayant deux transistors transmettant du courant en parallèle, la tension base-émetteur d'un premier transistor étant tirée de celle du second transistor par soustraction d'une composante proportionnelle à l'intensité du courant transmis par le second transistor. Application à la formation de sources de courant constant
FR7829950A 1977-10-21 1978-10-20 Circuit de polarisation a courant constant Granted FR2406849A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4386677 1977-10-21
GB7840526A GB2007055B (en) 1977-10-21 1978-10-13 Circuit arrangement

Publications (2)

Publication Number Publication Date
FR2406849A1 true FR2406849A1 (fr) 1979-05-18
FR2406849B1 FR2406849B1 (fr) 1982-11-12

Family

ID=26265254

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7829950A Granted FR2406849A1 (fr) 1977-10-21 1978-10-20 Circuit de polarisation a courant constant

Country Status (6)

Country Link
US (1) US4283641A (fr)
JP (1) JPS5499548A (fr)
DE (1) DE2845761A1 (fr)
FR (1) FR2406849A1 (fr)
GB (1) GB2007055B (fr)
NL (1) NL7810556A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0895348A1 (fr) * 1997-07-28 1999-02-03 Siemens Aktiengesellschaft Etage amplificateur à transistor

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3049187A1 (de) * 1980-01-08 1981-09-10 Honeywell Inc., Minneapolis, Minn. Verstaerker
JPS57106871A (en) * 1980-12-24 1982-07-02 Hitachi Ltd Current detecting circuit
JPS58172721A (ja) * 1982-04-05 1983-10-11 Toshiba Corp トランジスタ回路
US4547881A (en) * 1983-11-09 1985-10-15 Advanced Micro Devices, Inc. ECL Logic circuit with a circuit for dynamically switchable low drop current source
GB2186452B (en) * 1986-02-07 1989-12-06 Plessey Co Plc A bias current circuit,and cascade and ring circuits incorporating same
US4736126A (en) * 1986-12-24 1988-04-05 Motorola Inc. Trimmable current source
US5245222A (en) * 1992-02-28 1993-09-14 Sgs-Thomson Microelectronics, Inc. Method and apparatus for buffering electrical signals
EP0632357A1 (fr) * 1993-06-30 1995-01-04 STMicroelectronics S.r.l. Circuit référence de tension avec coéfficient de température programmable
US5627461A (en) * 1993-12-08 1997-05-06 Nec Corporation Reference current circuit capable of preventing occurrence of a difference collector current which is caused by early voltage effect
GB2317718B (en) * 1993-12-08 1998-06-10 Nec Corp Reference current circuit and reference voltage circuit
EP2314700A1 (fr) * 1999-01-28 2011-04-27 Medical College of Georgia Research Institute, Inc Composition et méthode destinées à l'attenuation in vivo et in vitro de l'expression génique utilisant de l'ARN double brin
US6313705B1 (en) 1999-12-20 2001-11-06 Rf Micro Devices, Inc. Bias network for high efficiency RF linear power amplifier
JP4726735B2 (ja) * 2006-08-11 2011-07-20 マスプロ電工株式会社 アンテナ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3659121A (en) * 1970-11-16 1972-04-25 Motorola Inc Constant current source
NL7214136A (fr) * 1972-10-19 1974-04-23
DE2712531A1 (de) * 1976-03-24 1977-10-06 Hitachi Ltd Konstantspannungsschaltung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4854460A (fr) * 1971-11-11 1973-07-31
US3721893A (en) * 1972-05-30 1973-03-20 Motorola Inc Stable current reference circuit with beta compensation
JPS5312350B2 (fr) * 1972-06-05 1978-04-28
JPS5132257A (fr) * 1974-09-13 1976-03-18 Hitachi Ltd

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3659121A (en) * 1970-11-16 1972-04-25 Motorola Inc Constant current source
NL7214136A (fr) * 1972-10-19 1974-04-23
DE2712531A1 (de) * 1976-03-24 1977-10-06 Hitachi Ltd Konstantspannungsschaltung
FR2345759A1 (fr) * 1976-03-24 1977-10-21 Hitachi Ltd Circuit generateur de tension constante

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/76 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0895348A1 (fr) * 1997-07-28 1999-02-03 Siemens Aktiengesellschaft Etage amplificateur à transistor
US5986509A (en) * 1997-07-28 1999-11-16 Siemens Aktiengesellschaft Transistor amplifier stage

Also Published As

Publication number Publication date
FR2406849B1 (fr) 1982-11-12
JPS5499548A (en) 1979-08-06
JPS6211529B2 (fr) 1987-03-13
GB2007055A (en) 1979-05-10
DE2845761A1 (de) 1979-04-26
NL7810556A (nl) 1979-04-24
GB2007055B (en) 1982-08-18
US4283641A (en) 1981-08-11

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse