IT1118043B - Transitori ad effetto di campo e circuiti integrati realizzati contali transistori - Google Patents

Transitori ad effetto di campo e circuiti integrati realizzati contali transistori

Info

Publication number
IT1118043B
IT1118043B IT26100/77A IT2610077A IT1118043B IT 1118043 B IT1118043 B IT 1118043B IT 26100/77 A IT26100/77 A IT 26100/77A IT 2610077 A IT2610077 A IT 2610077A IT 1118043 B IT1118043 B IT 1118043B
Authority
IT
Italy
Prior art keywords
contral
transistors
field
integrated circuits
circuits realized
Prior art date
Application number
IT26100/77A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1118043B publication Critical patent/IT1118043B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
IT26100/77A 1976-08-19 1977-07-26 Transitori ad effetto di campo e circuiti integrati realizzati contali transistori IT1118043B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/715,948 US4095251A (en) 1976-08-19 1976-08-19 Field effect transistors and fabrication of integrated circuits containing the transistors

Publications (1)

Publication Number Publication Date
IT1118043B true IT1118043B (it) 1986-02-24

Family

ID=24876116

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26100/77A IT1118043B (it) 1976-08-19 1977-07-26 Transitori ad effetto di campo e circuiti integrati realizzati contali transistori

Country Status (6)

Country Link
US (1) US4095251A (it)
JP (1) JPS5324787A (it)
CA (1) CA1092253A (it)
FR (1) FR2362493A1 (it)
GB (1) GB1589288A (it)
IT (1) IT1118043B (it)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2802838A1 (de) * 1978-01-23 1979-08-16 Siemens Ag Mis-feldeffekttransistor mit kurzer kanallaenge
US4216573A (en) * 1978-05-08 1980-08-12 International Business Machines Corporation Three mask process for making field effect transistors
US4180826A (en) * 1978-05-19 1979-12-25 Intel Corporation MOS double polysilicon read-only memory and cell
US4219925A (en) * 1978-09-01 1980-09-02 Teletype Corporation Method of manufacturing a device in a silicon wafer
US4212684A (en) * 1978-11-20 1980-07-15 Ncr Corporation CISFET Processing including simultaneous doping of silicon components and FET channels
US4222816A (en) * 1978-12-26 1980-09-16 International Business Machines Corporation Method for reducing parasitic capacitance in integrated circuit structures
DE2902665A1 (de) * 1979-01-24 1980-08-07 Siemens Ag Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie
US4288910A (en) * 1979-04-16 1981-09-15 Teletype Corporation Method of manufacturing a semiconductor device
JPS55157537U (it) * 1979-04-28 1980-11-12
US4355455A (en) * 1979-07-19 1982-10-26 National Semiconductor Corporation Method of manufacture for self-aligned floating gate memory cell
US4267632A (en) * 1979-10-19 1981-05-19 Intel Corporation Process for fabricating a high density electrically programmable memory array
JPS5696854A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Semiconductor memory device
US4326332A (en) * 1980-07-28 1982-04-27 International Business Machines Corp. Method of making a high density V-MOS memory array
JPS57124479A (en) * 1981-01-27 1982-08-03 Clarion Co Ltd Manufacture of metal oxide semiconductor type semiconductor device
US4493056A (en) * 1982-06-30 1985-01-08 International Business Machines Corporation RAM Utilizing offset contact regions for increased storage capacitance
DE3650638T2 (de) * 1985-03-22 1998-02-12 Nippon Electric Co Integrierte Halbleiterschaltung mit Isolationszone
US4847517A (en) * 1988-02-16 1989-07-11 Ltv Aerospace & Defense Co. Microwave tube modulator
US5006911A (en) * 1989-10-02 1991-04-09 Motorola, Inc. Transistor device with high density contacts
US5164806A (en) * 1990-05-23 1992-11-17 Mitsubishi Denki Kabushiki Kaisha Element isolating structure of semiconductor device suitable for high density integration
JP2881267B2 (ja) * 1991-01-11 1999-04-12 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2901788B2 (ja) * 1991-07-19 1999-06-07 ローム株式会社 炭化珪素半導体装置
US5444283A (en) * 1991-12-17 1995-08-22 Mosel Vitelic Corporation Dopant-diffusion buffered buried contact module for integrated circuits
US5250459A (en) * 1992-04-14 1993-10-05 Micron Technology, Inc. Electrically programmable low resistive antifuse element
US6683350B1 (en) * 1993-02-05 2004-01-27 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
JP3318384B2 (ja) * 1993-02-05 2002-08-26 株式会社半導体エネルギー研究所 薄膜トランジスタ及びその作製方法
US5606202A (en) * 1995-04-25 1997-02-25 International Business Machines, Corporation Planarized gate conductor on substrates with above-surface isolation
US6221715B1 (en) * 1998-07-28 2001-04-24 Winbond Electronics Corporation Method of making polysilicon self-aligned to field isolation oxide
US6091630A (en) * 1999-09-10 2000-07-18 Stmicroelectronics, Inc. Radiation hardened semiconductor memory

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN140846B (it) * 1973-08-06 1976-12-25 Rca Corp
US3936859A (en) * 1973-08-06 1976-02-03 Rca Corporation Semiconductor device including a conductor surrounded by an insulator

Also Published As

Publication number Publication date
CA1092253A (en) 1980-12-23
US4095251A (en) 1978-06-13
JPS5324787A (en) 1978-03-07
GB1589288A (en) 1981-05-07
FR2362493A1 (fr) 1978-03-17
FR2362493B1 (it) 1979-03-30

Similar Documents

Publication Publication Date Title
IT1118043B (it) Transitori ad effetto di campo e circuiti integrati realizzati contali transistori
IT1160028B (it) Processo di fabbricazione di circuiti integrati
IT1115712B (it) Apparecchiatura perfezionata per la fabbricazione di circuiti integrati
IT1077375B (it) Transistor ad effetto di campo ad alta velocita'
IT7831078A0 (it) Struttura d'interconnessione di circuiti integrati.
NL189889C (nl) Geintegreerde halfgeleiderschakeling.
IT7922901A0 (it) Dispositivi semiconduttori e circuiti integrati.
SE7712295L (sv) Integrerad krets
IT1063564B (it) Processo di fabbricazione di transistori ad effetto di campo e bipolari integrati
IT1114777B (it) Transistore ad effetto di campo perfezionato e processo per la fabbricazione di circuiti integrati contenenti una pluralita' di tali transistori
IT1077520B (it) Trasistore a effetto di campo con molto piccola lunghezza di canale
DK479576A (da) Transistortendingskredslob
IT1091703B (it) Transistore di arseniuro di gallio ad effetto di campo ad alta potenza
IT1058321B (it) Transistore complementare ad effetto di campo
IT1074052B (it) Memoria a transistori ad effetto di campo perfezionata
IT7827014A0 (it) Processo di fabbricazione di circuiti semiconduttori integrati.
IT1070009B (it) Transistore ad effetto di campo perfezionato
FR2382805B1 (fr) Circuit logique realise suivant la technique des circuits integres mos
IT7927987A0 (it) Complesso circuitale comprendente transistori ad effetto di campo collegati in schemi pseudo-simmetrici sbilanciati.
SE413216B (sv) Sammansatt transistorkrets
IT1072852B (it) Processo per la fabbricazione di transistori ad effetto di campo
BE824510A (fr) Circuit de transistors combines
IT1192739B (it) Sorgente di corrente costante a transistori ad effetti di campo a porta isolata (igfet) integrati
IT1115346B (it) Processo perfezionato per la fabbricazione di transistori ad effetto di campo
IT1102177B (it) Procedimento di realizzazione di transistori ad effetto di campo di tipo mos e transistori realizzati secondo un tale procedimento