IT7927987A0 - Complesso circuitale comprendente transistori ad effetto di campo collegati in schemi pseudo-simmetrici sbilanciati. - Google Patents

Complesso circuitale comprendente transistori ad effetto di campo collegati in schemi pseudo-simmetrici sbilanciati.

Info

Publication number
IT7927987A0
IT7927987A0 IT7927987A IT2798779A IT7927987A0 IT 7927987 A0 IT7927987 A0 IT 7927987A0 IT 7927987 A IT7927987 A IT 7927987A IT 2798779 A IT2798779 A IT 2798779A IT 7927987 A0 IT7927987 A0 IT 7927987A0
Authority
IT
Italy
Prior art keywords
unbalanced
pseudo
field effect
effect transistors
transistors connected
Prior art date
Application number
IT7927987A
Other languages
English (en)
Inventor
Andrew Gordon Francis Dingwall
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7927987A0 publication Critical patent/IT7927987A0/it

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183Long tailed pairs
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183Long tailed pairs
    • H03F3/45188Non-folded cascode stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45676Indexing scheme relating to differential amplifiers the LC comprising one cascode current mirror
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45684Indexing scheme relating to differential amplifiers the LC comprising one or more buffers or driving stages not being of the emitter respectively source follower type, between the output of the dif amp and the output stage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
IT7927987A 1978-12-15 1979-12-07 Complesso circuitale comprendente transistori ad effetto di campo collegati in schemi pseudo-simmetrici sbilanciati. IT7927987A0 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/969,784 US4188588A (en) 1978-12-15 1978-12-15 Circuitry with unbalanced long-tailed-pair connections of FET's

Publications (1)

Publication Number Publication Date
IT7927987A0 true IT7927987A0 (it) 1979-12-07

Family

ID=25516002

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7927987A IT7927987A0 (it) 1978-12-15 1979-12-07 Complesso circuitale comprendente transistori ad effetto di campo collegati in schemi pseudo-simmetrici sbilanciati.

Country Status (6)

Country Link
US (1) US4188588A (it)
JP (1) JPS5583309A (it)
DE (1) DE2950480A1 (it)
FR (1) FR2444291A1 (it)
GB (1) GB2038581A (it)
IT (1) IT7927987A0 (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8001558A (nl) * 1980-03-17 1981-10-16 Philips Nv Stroomstabilisator opgebouwd met veldeffekttransistor van het verrijkingstype.
NL8001560A (nl) * 1980-03-17 1981-10-16 Philips Nv Stroomstabilisator opgebouwd met veldeffekttransistor van het verrijkingstype.
US4300091A (en) * 1980-07-11 1981-11-10 Rca Corporation Current regulating circuitry
JPS57178408A (en) * 1981-04-27 1982-11-02 Nec Corp Differential amplifying circuit
US4441039A (en) * 1981-11-20 1984-04-03 International Business Machines Corporation Input buffer circuit for semiconductor memory
US4567448A (en) * 1982-08-05 1986-01-28 Epson Corporation Variable frequency oscillator
JPS5943614A (ja) * 1982-09-03 1984-03-10 Hitachi Ltd 差動増幅回路
JPS5970106A (ja) * 1982-10-15 1984-04-20 株式会社日立製作所 機器選択制御装置
US4518869A (en) * 1982-12-21 1985-05-21 Motorola, Inc. Resistance comparator for switch detection
JPS60252927A (ja) * 1984-09-28 1985-12-13 Hitachi Ltd 基準電圧発生装置及びそれを用いた電子装置
JPS60252928A (ja) * 1984-09-28 1985-12-13 Hitachi Ltd 差動増幅器及びそれを用いた電子装置
JPS60242658A (ja) * 1984-10-24 1985-12-02 Hitachi Ltd 半導体集積回路
JPS60243716A (ja) * 1984-10-24 1985-12-03 Hitachi Ltd 電圧レギユレ−タ
JPS60143011A (ja) * 1984-10-24 1985-07-29 Hitachi Ltd 半導体集積回路装置
US4717836A (en) * 1986-02-04 1988-01-05 Burr-Brown Corporation CMOS input level shifting circuit with temperature-compensating n-channel field effect transistor structure
GB2201535B (en) * 1987-02-25 1990-11-28 Motorola Inc Cmos analog multiplying circuit
GB2206010A (en) * 1987-06-08 1988-12-21 Philips Electronic Associated Differential amplifier and current sensing circuit including such an amplifier
US4857862A (en) * 1988-04-06 1989-08-15 Analog Devices, Incorporated High-gain IC amplifier
JP2005191821A (ja) * 2003-12-25 2005-07-14 Seiko Epson Corp コンパレータ回路及び電源回路
CN115694508A (zh) * 2021-07-23 2023-02-03 瑞昱半导体股份有限公司 数字模拟转换器电路与电流导向式数字模拟转换器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852679A (en) * 1972-12-26 1974-12-03 Rca Corp Current mirror amplifiers
US3835410A (en) * 1972-12-26 1974-09-10 Rca Corp Current amplifier
US3851241A (en) * 1973-08-27 1974-11-26 Rca Corp Temperature dependent voltage reference circuit
GB1518961A (en) * 1975-02-24 1978-07-26 Rca Corp Amplifier circuits
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference
US4100437A (en) * 1976-07-29 1978-07-11 Intel Corporation MOS reference voltage circuit
US4068184A (en) * 1977-02-14 1978-01-10 Rca Corporation Current mirror amplifier
US4096430A (en) * 1977-04-04 1978-06-20 General Electric Company Metal-oxide-semiconductor voltage reference
US4201947A (en) * 1978-02-10 1980-05-06 Rca Corporation Long-tailed-pair connections of MOSFET's operated in sub-threshold region

Also Published As

Publication number Publication date
DE2950480A1 (de) 1980-06-26
JPS5653883B2 (it) 1981-12-22
US4188588A (en) 1980-02-12
GB2038581A (en) 1980-07-23
FR2444291A1 (fr) 1980-07-11
JPS5583309A (en) 1980-06-23

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