IT1102177B - Procedimento di realizzazione di transistori ad effetto di campo di tipo mos e transistori realizzati secondo un tale procedimento - Google Patents

Procedimento di realizzazione di transistori ad effetto di campo di tipo mos e transistori realizzati secondo un tale procedimento

Info

Publication number
IT1102177B
IT1102177B IT48972/78A IT4897278A IT1102177B IT 1102177 B IT1102177 B IT 1102177B IT 48972/78 A IT48972/78 A IT 48972/78A IT 4897278 A IT4897278 A IT 4897278A IT 1102177 B IT1102177 B IT 1102177B
Authority
IT
Italy
Prior art keywords
transistors
procedure
type field
realized according
mos type
Prior art date
Application number
IT48972/78A
Other languages
English (en)
Other versions
IT7848972A0 (it
Original Assignee
Thomson Csf
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Csf filed Critical Thomson Csf
Publication of IT7848972A0 publication Critical patent/IT7848972A0/it
Application granted granted Critical
Publication of IT1102177B publication Critical patent/IT1102177B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/141—Self-alignment coat gate
IT48972/78A 1977-04-20 1978-04-19 Procedimento di realizzazione di transistori ad effetto di campo di tipo mos e transistori realizzati secondo un tale procedimento IT1102177B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7711912A FR2388410A1 (fr) 1977-04-20 1977-04-20 Procede de realisation de transistors a effet de champ de type mos, et transistors realises selon un tel procede

Publications (2)

Publication Number Publication Date
IT7848972A0 IT7848972A0 (it) 1978-04-19
IT1102177B true IT1102177B (it) 1985-10-07

Family

ID=9189666

Family Applications (1)

Application Number Title Priority Date Filing Date
IT48972/78A IT1102177B (it) 1977-04-20 1978-04-19 Procedimento di realizzazione di transistori ad effetto di campo di tipo mos e transistori realizzati secondo un tale procedimento

Country Status (5)

Country Link
US (1) US4160683A (it)
DE (1) DE2817342A1 (it)
FR (1) FR2388410A1 (it)
GB (1) GB1594537A (it)
IT (1) IT1102177B (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54140483A (en) * 1978-04-21 1979-10-31 Nec Corp Semiconductor device
JPS55163860A (en) * 1979-06-06 1980-12-20 Toshiba Corp Manufacture of semiconductor device
US4280855A (en) * 1980-01-23 1981-07-28 Ibm Corporation Method of making a dual DMOS device by ion implantation and diffusion
US5202574A (en) * 1980-05-02 1993-04-13 Texas Instruments Incorporated Semiconductor having improved interlevel conductor insulation
US4317276A (en) * 1980-06-12 1982-03-02 Teletype Corporation Method of manufacturing an insulated gate field-effect transistor therefore in a silicon wafer
US4356623A (en) * 1980-09-15 1982-11-02 Texas Instruments Incorporated Fabrication of submicron semiconductor devices
US4366613A (en) * 1980-12-17 1983-01-04 Ibm Corporation Method of fabricating an MOS dynamic RAM with lightly doped drain
FR2525389A1 (fr) * 1982-04-14 1983-10-21 Commissariat Energie Atomique Procede de positionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
US4830975A (en) * 1983-01-13 1989-05-16 National Semiconductor Corporation Method of manufacture a primos device
US4553315A (en) * 1984-04-05 1985-11-19 Harris Corporation N Contact compensation technique
US4818714A (en) * 1987-12-02 1989-04-04 Advanced Micro Devices, Inc. Method of making a high performance MOS device having LDD regions with graded junctions
US5015595A (en) * 1988-09-09 1991-05-14 Advanced Micro Devices, Inc. Method of making a high performance MOS device having both P- and N-LDD regions using single photoresist mask
JP3426043B2 (ja) * 1994-09-27 2003-07-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6933237B2 (en) * 2002-06-21 2005-08-23 Hewlett-Packard Development Company, L.P. Substrate etch method and device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB381501I5 (it) * 1964-07-09
GB1187611A (en) * 1966-03-23 1970-04-08 Matsushita Electronics Corp Method of manufacturing Semiconductors Device
US3434021A (en) * 1967-01-13 1969-03-18 Rca Corp Insulated gate field effect transistor
US3837071A (en) * 1973-01-16 1974-09-24 Rca Corp Method of simultaneously making a sigfet and a mosfet
US3959025A (en) * 1974-05-01 1976-05-25 Rca Corporation Method of making an insulated gate field effect transistor

Also Published As

Publication number Publication date
FR2388410B1 (it) 1981-11-13
GB1594537A (en) 1981-07-30
FR2388410A1 (fr) 1978-11-17
IT7848972A0 (it) 1978-04-19
US4160683A (en) 1979-07-10
DE2817342A1 (de) 1978-10-26

Similar Documents

Publication Publication Date Title
IT1100257B (it) Transistore ad effetto di campo sensibile ai prodotti chimici
IT1088636B (it) Guarniuione per la tenuta stagna di due organi dimacchina e procedimento per realizzare la tenuta stagna
DK101379A (da) Termoelement
IT1176216B (it) Procedimento per fabbricare transistor ad effetto di campo
IT1058321B (it) Transistore complementare ad effetto di campo
IT1077375B (it) Transistor ad effetto di campo ad alta velocita'
IT1118043B (it) Transitori ad effetto di campo e circuiti integrati realizzati contali transistori
IT1102177B (it) Procedimento di realizzazione di transistori ad effetto di campo di tipo mos e transistori realizzati secondo un tale procedimento
IT1070009B (it) Transistore ad effetto di campo perfezionato
SE7902997L (sv) Tetningskompositioner
IT1072852B (it) Processo per la fabbricazione di transistori ad effetto di campo
FI781867A7 (fi) Organiska foereningar
IT1132331B (it) Transistori
AT368231B (de) Firstabdichtung
IT1115346B (it) Processo perfezionato per la fabbricazione di transistori ad effetto di campo
BR7906974A (pt) Transistor
IT1168715B (it) Amplificatore differenziale costituito da transistor ad effetto di campo del tipo metallo-isolante-semiconduttore
IT7926448A0 (it) Transistore ad effetto di campo aporta isolata.
SE7703512L (sv) Portmaskineri
DK143923C (da) Fremgangsmaade til drift af en n-kanal lagerfelteffekttransistor og n-kanal lagerfelteffekttransistor til udnyttelse af fremgangsmaaden
SE7807554L (sv) Organiska foreningar
NO148756C (no) Tetningskappe paa foringsroer i broennhull
SE7806852L (sv) Organiska foreningar
IT1130764B (it) Transistore ad effetto di campo,del tipo a giunzione
ATA797678A (de) Rolltor