IT1130764B - Transistore ad effetto di campo,del tipo a giunzione - Google Patents

Transistore ad effetto di campo,del tipo a giunzione

Info

Publication number
IT1130764B
IT1130764B IT22325/80A IT2232580A IT1130764B IT 1130764 B IT1130764 B IT 1130764B IT 22325/80 A IT22325/80 A IT 22325/80A IT 2232580 A IT2232580 A IT 2232580A IT 1130764 B IT1130764 B IT 1130764B
Authority
IT
Italy
Prior art keywords
field
effect transistor
junction type
junction
type
Prior art date
Application number
IT22325/80A
Other languages
English (en)
Other versions
IT8022325A0 (it
Inventor
Jacobus Houthoff
Johannes Joseph Sips
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT8022325A0 publication Critical patent/IT8022325A0/it
Application granted granted Critical
Publication of IT1130764B publication Critical patent/IT1130764B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
IT22325/80A 1979-05-29 1980-05-26 Transistore ad effetto di campo,del tipo a giunzione IT1130764B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7904200A NL7904200A (nl) 1979-05-29 1979-05-29 Lagenveldeffecttransistor.

Publications (2)

Publication Number Publication Date
IT8022325A0 IT8022325A0 (it) 1980-05-26
IT1130764B true IT1130764B (it) 1986-06-18

Family

ID=19833263

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22325/80A IT1130764B (it) 1979-05-29 1980-05-26 Transistore ad effetto di campo,del tipo a giunzione

Country Status (11)

Country Link
US (1) US4498094A (it)
JP (1) JPS6044834B2 (it)
AU (1) AU537860B2 (it)
CA (1) CA1150854A (it)
DE (1) DE3019927A1 (it)
ES (1) ES8102418A1 (it)
FR (1) FR2458147B1 (it)
GB (1) GB2052860B (it)
IT (1) IT1130764B (it)
NL (1) NL7904200A (it)
SE (1) SE8003898L (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957477A (ja) * 1982-09-27 1984-04-03 Fujitsu Ltd 半導体装置
US4622568A (en) * 1984-05-09 1986-11-11 Eaton Corporation Planar field-shaped bidirectional power FET
JPH01123417A (ja) * 1987-11-07 1989-05-16 Mitsubishi Electric Corp 半導体装置の製造方法
AU643781B2 (en) * 1989-09-26 1993-11-25 Sumitomo Electric Industries, Ltd. A semiconductor device
DE19644821C1 (de) * 1996-10-29 1998-02-12 Daimler Benz Ag Steuerbare Halbleiterstruktur mit verbesserten Schalteigenschaften

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299194A (it) * 1962-10-15
US3316131A (en) * 1963-08-15 1967-04-25 Texas Instruments Inc Method of producing a field-effect transistor
US3222810A (en) * 1964-06-23 1965-12-14 Daniel D Musgrave Magazine loading clip
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor
US3656031A (en) * 1970-12-14 1972-04-11 Tektronix Inc Low noise field effect transistor with channel having subsurface portion of high conductivity
US4112455A (en) * 1977-01-27 1978-09-05 The United States Of America As Represented By The Secretary Of The Navy Field-effect transistor with extended linear logarithmic transconductance
US4119996A (en) * 1977-07-20 1978-10-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Complementary DMOS-VMOS integrated circuit structure
JPS5846863B2 (ja) * 1977-08-25 1983-10-19 松下電器産業株式会社 半導体集積回路装置
US4176368A (en) * 1978-10-10 1979-11-27 National Semiconductor Corporation Junction field effect transistor for use in integrated circuits

Also Published As

Publication number Publication date
ES491862A0 (es) 1980-12-16
NL7904200A (nl) 1980-12-02
JPS6044834B2 (ja) 1985-10-05
ES8102418A1 (es) 1980-12-16
GB2052860A (en) 1981-01-28
DE3019927A1 (de) 1980-12-04
JPS55158676A (en) 1980-12-10
US4498094A (en) 1985-02-05
GB2052860B (en) 1983-06-29
AU5881180A (en) 1980-12-04
IT8022325A0 (it) 1980-05-26
AU537860B2 (en) 1984-07-19
FR2458147B1 (fr) 1985-10-31
SE8003898L (sv) 1980-11-30
FR2458147A1 (fr) 1980-12-26
CA1150854A (en) 1983-07-26

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