ES8102418A1 - Un transistor de efecto de campo de union - Google Patents

Un transistor de efecto de campo de union

Info

Publication number
ES8102418A1
ES8102418A1 ES491862A ES491862A ES8102418A1 ES 8102418 A1 ES8102418 A1 ES 8102418A1 ES 491862 A ES491862 A ES 491862A ES 491862 A ES491862 A ES 491862A ES 8102418 A1 ES8102418 A1 ES 8102418A1
Authority
ES
Spain
Prior art keywords
field effect
effect transistor
junction field
region
substantially quadratic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES491862A
Other languages
English (en)
Other versions
ES491862A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES491862A0 publication Critical patent/ES491862A0/es
Publication of ES8102418A1 publication Critical patent/ES8102418A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Amplifiers (AREA)

Abstract

METODO DE ELABORACION Y DISEÑO DE UN TRANSISTOR DE EFECTO DE CAMPO. SOBRE UN SUBSTRATO (18) DE SILICIO SE DEPOSITA UNA CAPA (17) DE IMPUREZAS TIPO P EPITAXIALMENTE; SOBRE ESTA SE DEPOSITA OTRA CAPA (4) DE IMPUREZAS TIPO N. LA SUPERFICIE (3) ES DOTADA DE UNA CAPA DE OXIDO, Y ATACADA ESTA QUIMICAMENTE SE FORMAN UNAS VENTANILLAS EN LAS QUE SE DIFUNDE MATERIAL TIPO P, OBTENIENDOSE LAS REGIONES QUE CONSTITUYEN LA CONEXION ENTRE LA ZONA DE ALIMENTACION Y EL SUSTRATO. LA REGION DE PUERTA (7) SE OBTIENE POR DIFUSION DE BORO EN UNA VENTANILLA ABIERTA EN LA CAPA DE OXIDO. ESTA ULTIMA ES ELIMINADA Y SUSTITUIDA POR OTRA CAPA DE OXIDO (9) LIMPIA, Y SOBRE UNAS ABERTURAS (10, 11) SE REALIZAN POR DIFUSION LA REGION DE ALIMENTACION (5) Y LA DE SALIDA (6). OTRAS ABERTURAS (12) SON EFECTUADAS EN LA CAPA DE OXIDO (9) SOBRE LA REGION DE PUERTA (7), Y SE RETIRA EL OXIDO DE LAS REGIONES P (8). SE DEPOSITA UNA CAPA DE METALIZACION Y POR ATAQUE QUIMICO ENMASCARADO, SE FORMAN LAS ZONAS METALICAS DE CONEXION (13, 14,15). UNA METALIZACION (16) DEL LADO INFERIOR FINALIZA EL PROCESO. EL TRANSISTOR ASI OBTENIDO TIENE UNA RELACION CUADRATICA ENTRE LA CORRIENTE DE CANAL Y LA TENSION DE PUERTA.
ES491862A 1979-05-29 1980-05-27 Un transistor de efecto de campo de union Expired ES8102418A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7904200A NL7904200A (nl) 1979-05-29 1979-05-29 Lagenveldeffecttransistor.

Publications (2)

Publication Number Publication Date
ES491862A0 ES491862A0 (es) 1980-12-16
ES8102418A1 true ES8102418A1 (es) 1980-12-16

Family

ID=19833263

Family Applications (1)

Application Number Title Priority Date Filing Date
ES491862A Expired ES8102418A1 (es) 1979-05-29 1980-05-27 Un transistor de efecto de campo de union

Country Status (11)

Country Link
US (1) US4498094A (es)
JP (1) JPS6044834B2 (es)
AU (1) AU537860B2 (es)
CA (1) CA1150854A (es)
DE (1) DE3019927A1 (es)
ES (1) ES8102418A1 (es)
FR (1) FR2458147B1 (es)
GB (1) GB2052860B (es)
IT (1) IT1130764B (es)
NL (1) NL7904200A (es)
SE (1) SE8003898L (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957477A (ja) * 1982-09-27 1984-04-03 Fujitsu Ltd 半導体装置
US4622568A (en) * 1984-05-09 1986-11-11 Eaton Corporation Planar field-shaped bidirectional power FET
JPH01123417A (ja) * 1987-11-07 1989-05-16 Mitsubishi Electric Corp 半導体装置の製造方法
AU643781B2 (en) * 1989-09-26 1993-11-25 Sumitomo Electric Industries, Ltd. A semiconductor device
DE19644821C1 (de) * 1996-10-29 1998-02-12 Daimler Benz Ag Steuerbare Halbleiterstruktur mit verbesserten Schalteigenschaften

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE638316A (es) * 1962-10-15
US3316131A (en) * 1963-08-15 1967-04-25 Texas Instruments Inc Method of producing a field-effect transistor
US3222810A (en) * 1964-06-23 1965-12-14 Daniel D Musgrave Magazine loading clip
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor
US3656031A (en) * 1970-12-14 1972-04-11 Tektronix Inc Low noise field effect transistor with channel having subsurface portion of high conductivity
US4112455A (en) * 1977-01-27 1978-09-05 The United States Of America As Represented By The Secretary Of The Navy Field-effect transistor with extended linear logarithmic transconductance
US4119996A (en) * 1977-07-20 1978-10-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Complementary DMOS-VMOS integrated circuit structure
JPS5846863B2 (ja) * 1977-08-25 1983-10-19 松下電器産業株式会社 半導体集積回路装置
US4176368A (en) * 1978-10-10 1979-11-27 National Semiconductor Corporation Junction field effect transistor for use in integrated circuits

Also Published As

Publication number Publication date
US4498094A (en) 1985-02-05
AU537860B2 (en) 1984-07-19
ES491862A0 (es) 1980-12-16
JPS55158676A (en) 1980-12-10
IT8022325A0 (it) 1980-05-26
FR2458147B1 (fr) 1985-10-31
DE3019927A1 (de) 1980-12-04
JPS6044834B2 (ja) 1985-10-05
GB2052860B (en) 1983-06-29
FR2458147A1 (fr) 1980-12-26
GB2052860A (en) 1981-01-28
AU5881180A (en) 1980-12-04
CA1150854A (en) 1983-07-26
NL7904200A (nl) 1980-12-02
SE8003898L (sv) 1980-11-30
IT1130764B (it) 1986-06-18

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