JPS5643765A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS5643765A
JPS5643765A JP11898079A JP11898079A JPS5643765A JP S5643765 A JPS5643765 A JP S5643765A JP 11898079 A JP11898079 A JP 11898079A JP 11898079 A JP11898079 A JP 11898079A JP S5643765 A JPS5643765 A JP S5643765A
Authority
JP
Japan
Prior art keywords
fet
type
breakdown voltage
regions
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11898079A
Other languages
Japanese (ja)
Inventor
Sukemitsu Takena
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11898079A priority Critical patent/JPS5643765A/en
Publication of JPS5643765A publication Critical patent/JPS5643765A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enlarge the breakdown voltage between a drain and a source of the FET-2 and prevent the increase of an element area due to the augmentation of the breakdown voltage by a method wherein the thickness of a semiconductor substrate is thickened in a cascode connection type FET which a FET-1 and the FET-2 are compounded. CONSTITUTION:The FET-1 is the junction type FET which n<+> type regions 10 are used as sources, a p<+> type region as the first gate, p type regions 7 as the second gates, and an n type region 8 as a drain. The FET-2 is a junction type FET which an n<-> type region held by the two p type regions 7 is used as a channel and the two p type regions are gates. The increase of an element area due to the augmentation of the breakdown voltage is prevented by thickening the thickness of the n<-> type semiconductor substrate 6 in the FET which the FET-1 and the FET-2 are cascode- connected.
JP11898079A 1979-09-17 1979-09-17 Field-effect transistor Pending JPS5643765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11898079A JPS5643765A (en) 1979-09-17 1979-09-17 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11898079A JPS5643765A (en) 1979-09-17 1979-09-17 Field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5643765A true JPS5643765A (en) 1981-04-22

Family

ID=14750031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11898079A Pending JPS5643765A (en) 1979-09-17 1979-09-17 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5643765A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012112A (en) * 1983-06-16 1985-01-22 バツテル、デイベロプメント、コ−ポレ−シヨン Dehydration method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012112A (en) * 1983-06-16 1985-01-22 バツテル、デイベロプメント、コ−ポレ−シヨン Dehydration method
JPH0513683B2 (en) * 1983-06-16 1993-02-23 Batsuteru Dev Corp Za

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