JPS5643765A - Field-effect transistor - Google Patents
Field-effect transistorInfo
- Publication number
- JPS5643765A JPS5643765A JP11898079A JP11898079A JPS5643765A JP S5643765 A JPS5643765 A JP S5643765A JP 11898079 A JP11898079 A JP 11898079A JP 11898079 A JP11898079 A JP 11898079A JP S5643765 A JPS5643765 A JP S5643765A
- Authority
- JP
- Japan
- Prior art keywords
- fet
- type
- breakdown voltage
- regions
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 230000015556 catabolic process Effects 0.000 abstract 3
- 230000003416 augmentation Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000008719 thickening Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To enlarge the breakdown voltage between a drain and a source of the FET-2 and prevent the increase of an element area due to the augmentation of the breakdown voltage by a method wherein the thickness of a semiconductor substrate is thickened in a cascode connection type FET which a FET-1 and the FET-2 are compounded. CONSTITUTION:The FET-1 is the junction type FET which n<+> type regions 10 are used as sources, a p<+> type region as the first gate, p type regions 7 as the second gates, and an n type region 8 as a drain. The FET-2 is a junction type FET which an n<-> type region held by the two p type regions 7 is used as a channel and the two p type regions are gates. The increase of an element area due to the augmentation of the breakdown voltage is prevented by thickening the thickness of the n<-> type semiconductor substrate 6 in the FET which the FET-1 and the FET-2 are cascode- connected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11898079A JPS5643765A (en) | 1979-09-17 | 1979-09-17 | Field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11898079A JPS5643765A (en) | 1979-09-17 | 1979-09-17 | Field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5643765A true JPS5643765A (en) | 1981-04-22 |
Family
ID=14750031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11898079A Pending JPS5643765A (en) | 1979-09-17 | 1979-09-17 | Field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5643765A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6012112A (en) * | 1983-06-16 | 1985-01-22 | バツテル、デイベロプメント、コ−ポレ−シヨン | Dehydration method |
-
1979
- 1979-09-17 JP JP11898079A patent/JPS5643765A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6012112A (en) * | 1983-06-16 | 1985-01-22 | バツテル、デイベロプメント、コ−ポレ−シヨン | Dehydration method |
JPH0513683B2 (en) * | 1983-06-16 | 1993-02-23 | Batsuteru Dev Corp Za |
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