BE878753A - Nouveau transistor a effet de champ mos - Google Patents
Nouveau transistor a effet de champ mosInfo
- Publication number
- BE878753A BE878753A BE0/197122A BE197122A BE878753A BE 878753 A BE878753 A BE 878753A BE 0/197122 A BE0/197122 A BE 0/197122A BE 197122 A BE197122 A BE 197122A BE 878753 A BE878753 A BE 878753A
- Authority
- BE
- Belgium
- Prior art keywords
- field effect
- effect transistor
- mos field
- new mos
- new
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/126—Power FETs
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/942,580 US4206469A (en) | 1978-09-15 | 1978-09-15 | Power metal-oxide-semiconductor-field-effect-transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
BE878753A true BE878753A (fr) | 1980-03-12 |
Family
ID=25478305
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE0/197122A BE878753A (fr) | 1978-09-15 | 1979-09-12 | Nouveau transistor a effet de champ mos |
Country Status (9)
Country | Link |
---|---|
US (1) | US4206469A (fr) |
JP (1) | JPS5555570A (fr) |
BE (1) | BE878753A (fr) |
BR (1) | BR7905850A (fr) |
CA (1) | CA1121516A (fr) |
DE (1) | DE2937261A1 (fr) |
FR (1) | FR2436504A1 (fr) |
GB (1) | GB2031226A (fr) |
IN (2) | IN151120B (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
US5130767C1 (en) * | 1979-05-14 | 2001-08-14 | Int Rectifier Corp | Plural polygon source pattern for mosfet |
WO1982002981A1 (fr) * | 1981-02-23 | 1982-09-02 | Inc Motorola | Transistor de puissance mos |
US4503598A (en) * | 1982-05-20 | 1985-03-12 | Fairchild Camera & Instrument Corporation | Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques |
US4783694A (en) * | 1984-03-16 | 1988-11-08 | Motorola Inc. | Integrated bipolar-MOS semiconductor device with common collector and drain |
US4866492A (en) * | 1986-02-28 | 1989-09-12 | Polyfet Rf Devices, Inc. | Low loss fet |
JPH0758782B2 (ja) * | 1986-03-19 | 1995-06-21 | 株式会社東芝 | 半導体装置 |
JPH0354868A (ja) * | 1989-07-21 | 1991-03-08 | Fuji Electric Co Ltd | Mos型半導体装置 |
JP2799252B2 (ja) * | 1991-04-23 | 1998-09-17 | 三菱電機株式会社 | Mos型半導体装置およびその製造方法 |
US5637922A (en) * | 1994-02-07 | 1997-06-10 | General Electric Company | Wireless radio frequency power semiconductor devices using high density interconnect |
EP0772242B1 (fr) | 1995-10-30 | 2006-04-05 | STMicroelectronics S.r.l. | Dispositif de puissance en technologie MOS avec une seule dimension critique |
EP0772241B1 (fr) | 1995-10-30 | 2004-06-09 | STMicroelectronics S.r.l. | Dispositif de puissance à haute densité en technologie MOS |
EP0961325B1 (fr) * | 1998-05-26 | 2008-05-07 | STMicroelectronics S.r.l. | Dispositif de puissance en technologie MOS à haute densité d'intégration |
JP2001015526A (ja) * | 1999-06-28 | 2001-01-19 | Nec Kansai Ltd | 電界効果トランジスタ |
JP4845293B2 (ja) * | 2000-08-30 | 2011-12-28 | 新電元工業株式会社 | 電界効果トランジスタ |
US9166009B2 (en) * | 2011-04-25 | 2015-10-20 | Renesas Electronics Corporation | Semiconductor apparatus and method for making semiconductor apparatus |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL152708B (nl) * | 1967-02-28 | 1977-03-15 | Philips Nv | Halfgeleiderinrichting met een veldeffecttransistor met geisoleerde poortelektrode. |
US3515405A (en) * | 1968-02-02 | 1970-06-02 | Westinghouse Electric Corp | Axle suspension system for transit vehicles |
US3851379A (en) * | 1973-05-16 | 1974-12-03 | Westinghouse Electric Corp | Solid state components |
US4055884A (en) * | 1976-12-13 | 1977-11-01 | International Business Machines Corporation | Fabrication of power field effect transistors and the resulting structures |
US4129879A (en) * | 1977-04-21 | 1978-12-12 | General Electric Company | Vertical field effect transistor |
JPS545674A (en) * | 1977-06-15 | 1979-01-17 | Sony Corp | Semiconductor device |
-
1978
- 1978-09-15 US US05/942,580 patent/US4206469A/en not_active Expired - Lifetime
-
1979
- 1979-08-22 IN IN872/CAL/79A patent/IN151120B/en unknown
- 1979-09-07 IN IN939/CAL/79A patent/IN152227B/en unknown
- 1979-09-10 GB GB7931335A patent/GB2031226A/en not_active Withdrawn
- 1979-09-11 CA CA000335410A patent/CA1121516A/fr not_active Expired
- 1979-09-12 BE BE0/197122A patent/BE878753A/fr unknown
- 1979-09-13 BR BR7905850A patent/BR7905850A/pt unknown
- 1979-09-14 FR FR7922988A patent/FR2436504A1/fr active Granted
- 1979-09-14 JP JP11747679A patent/JPS5555570A/ja active Pending
- 1979-09-14 DE DE19792937261 patent/DE2937261A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE2937261A1 (de) | 1980-03-27 |
US4206469A (en) | 1980-06-03 |
FR2436504B1 (fr) | 1982-11-12 |
GB2031226A (en) | 1980-04-16 |
FR2436504A1 (fr) | 1980-04-11 |
BR7905850A (pt) | 1980-05-27 |
IN151120B (fr) | 1983-02-26 |
JPS5555570A (en) | 1980-04-23 |
CA1121516A (fr) | 1982-04-06 |
IN152227B (fr) | 1983-11-26 |
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