JPS5211872A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5211872A JPS5211872A JP50087397A JP8739775A JPS5211872A JP S5211872 A JPS5211872 A JP S5211872A JP 50087397 A JP50087397 A JP 50087397A JP 8739775 A JP8739775 A JP 8739775A JP S5211872 A JPS5211872 A JP S5211872A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- parasiticly
- confining
- cmos
- shall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50087397A JPS5211872A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
| GB29282/76A GB1559582A (en) | 1975-07-18 | 1976-07-14 | Complementary mosfet device |
| FR7621993A FR2318503A1 (fr) | 1975-07-18 | 1976-07-19 | Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire |
| DE19762632447 DE2632447A1 (de) | 1975-07-18 | 1976-07-19 | Cmos-halbleitervorrichtung |
| CH923676A CH611739A5 (en) | 1975-07-18 | 1976-07-19 | CMOS Semiconductor circuit |
| US05/917,175 US4152717A (en) | 1975-07-18 | 1978-06-20 | Complementary MOSFET device |
| MY316/81A MY8100316A (en) | 1975-07-18 | 1981-12-30 | A complementary mosfet device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50087397A JPS5211872A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5211872A true JPS5211872A (en) | 1977-01-29 |
| JPS626347B2 JPS626347B2 (enrdf_load_stackoverflow) | 1987-02-10 |
Family
ID=13913732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50087397A Granted JPS5211872A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5211872A (enrdf_load_stackoverflow) |
| CH (1) | CH611739A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2632447A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2318503A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1559582A (enrdf_load_stackoverflow) |
| MY (1) | MY8100316A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58210660A (ja) * | 1982-06-01 | 1983-12-07 | Seiko Epson Corp | 半導体装置 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53128281A (en) * | 1977-04-15 | 1978-11-09 | Hitachi Ltd | Insulated gate field effect type semiconductor device for large power |
| GB1549130A (en) * | 1977-06-01 | 1979-08-01 | Hughes Microelectronics Ltd Cm | Monolithic integrated circuit |
| JPS5591162A (en) * | 1978-12-27 | 1980-07-10 | Fujitsu Ltd | Semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE636316A (enrdf_load_stackoverflow) * | 1962-08-23 | 1900-01-01 | ||
| US3916430A (en) * | 1973-03-14 | 1975-10-28 | Rca Corp | System for eliminating substrate bias effect in field effect transistor circuits |
-
1975
- 1975-07-18 JP JP50087397A patent/JPS5211872A/ja active Granted
-
1976
- 1976-07-14 GB GB29282/76A patent/GB1559582A/en not_active Expired
- 1976-07-19 FR FR7621993A patent/FR2318503A1/fr active Granted
- 1976-07-19 CH CH923676A patent/CH611739A5/xx not_active IP Right Cessation
- 1976-07-19 DE DE19762632447 patent/DE2632447A1/de not_active Ceased
-
1981
- 1981-12-30 MY MY316/81A patent/MY8100316A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58210660A (ja) * | 1982-06-01 | 1983-12-07 | Seiko Epson Corp | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2318503A1 (fr) | 1977-02-11 |
| FR2318503B1 (enrdf_load_stackoverflow) | 1980-05-16 |
| GB1559582A (en) | 1980-01-23 |
| DE2632447A1 (de) | 1977-01-20 |
| JPS626347B2 (enrdf_load_stackoverflow) | 1987-02-10 |
| CH611739A5 (en) | 1979-06-15 |
| MY8100316A (en) | 1981-12-31 |
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