JPS51115782A - Semiconductor apparatus - Google Patents

Semiconductor apparatus

Info

Publication number
JPS51115782A
JPS51115782A JP50040270A JP4027075A JPS51115782A JP S51115782 A JPS51115782 A JP S51115782A JP 50040270 A JP50040270 A JP 50040270A JP 4027075 A JP4027075 A JP 4027075A JP S51115782 A JPS51115782 A JP S51115782A
Authority
JP
Japan
Prior art keywords
semiconductor apparatus
high speed
type transistor
connection type
darlington connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50040270A
Other languages
Japanese (ja)
Other versions
JPS561785B2 (en
Inventor
Takao Sasayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50040270A priority Critical patent/JPS51115782A/en
Priority to GB12506/76A priority patent/GB1539426A/en
Priority to DE2614065A priority patent/DE2614065B2/en
Publication of JPS51115782A publication Critical patent/JPS51115782A/en
Priority to US05/750,587 priority patent/US4100564A/en
Publication of JPS561785B2 publication Critical patent/JPS561785B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE: A darlington connection type transistor fitted to switch major current by high speed.
COPYRIGHT: (C)1976,JPO&Japio
JP50040270A 1975-04-04 1975-04-04 Semiconductor apparatus Granted JPS51115782A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP50040270A JPS51115782A (en) 1975-04-04 1975-04-04 Semiconductor apparatus
GB12506/76A GB1539426A (en) 1975-04-04 1976-03-29 Power transistor device
DE2614065A DE2614065B2 (en) 1975-04-04 1976-04-01 Monolithically integrated Darlington pair
US05/750,587 US4100564A (en) 1975-04-04 1976-12-15 Power transistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50040270A JPS51115782A (en) 1975-04-04 1975-04-04 Semiconductor apparatus

Publications (2)

Publication Number Publication Date
JPS51115782A true JPS51115782A (en) 1976-10-12
JPS561785B2 JPS561785B2 (en) 1981-01-16

Family

ID=12575938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50040270A Granted JPS51115782A (en) 1975-04-04 1975-04-04 Semiconductor apparatus

Country Status (3)

Country Link
JP (1) JPS51115782A (en)
DE (1) DE2614065B2 (en)
GB (1) GB1539426A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1214806B (en) * 1984-09-21 1990-01-18 Ates Componenti Elettron INTEGRATED MONOLITHIC POWER AND SEMICONDUCTOR DEVICE
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device
GB2183907B (en) * 1985-11-27 1989-10-04 Raytheon Co Semiconductor device
CN113474878A (en) * 2018-10-12 2021-10-01 瑟其福耐斯特有限公司 Method of fabricating transistor device

Also Published As

Publication number Publication date
GB1539426A (en) 1979-01-31
JPS561785B2 (en) 1981-01-16
DE2614065B2 (en) 1978-06-22
DE2614065A1 (en) 1976-10-14

Similar Documents

Publication Publication Date Title
JPS5227400A (en) Power source device
JPS51140642A (en) Driving circuit
JPS5210012A (en) Pnpn switch driving circuit
JPS51115782A (en) Semiconductor apparatus
JPS5223251A (en) Semiconductor circuit
JPS51138356A (en) Priority interruption control circuit
JPS525273A (en) Transistor
JPS5336656A (en) Current mirror circuit
JPS5219217A (en) Overcurrent limiting device
JPS5357737A (en) Magnetic control circuit
JPS51130176A (en) Semiconductor device process
JPS524175A (en) Groups iii-v compounds semiconductor device
JPS5270778A (en) Semiconductor device
JPS5227522A (en) Transistor inverter
JPS5276867A (en) Signal holding circuit
JPS527511A (en) Electric vehicle control system
JPS528444A (en) Distance relay device
JPS529384A (en) Transistor circuit device
JPS5240078A (en) Process for production of semiconductor device
JPS51150650A (en) Digital protection relay device
JPS51126119A (en) Envelope producer
JPS51122744A (en) Spark quenching circuit for switch
JPS5230545A (en) Top
JPS5220475A (en) Device for purifying oil
JPS5213929A (en) Bicycling practice device