JPS51115782A - Semiconductor apparatus - Google Patents

Semiconductor apparatus

Info

Publication number
JPS51115782A
JPS51115782A JP50040270A JP4027075A JPS51115782A JP S51115782 A JPS51115782 A JP S51115782A JP 50040270 A JP50040270 A JP 50040270A JP 4027075 A JP4027075 A JP 4027075A JP S51115782 A JPS51115782 A JP S51115782A
Authority
JP
Japan
Prior art keywords
semiconductor apparatus
high speed
type transistor
connection type
darlington connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50040270A
Other languages
Japanese (ja)
Other versions
JPS561785B2 (en
Inventor
Takao Sasayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50040270A priority Critical patent/JPS51115782A/en
Priority to GB1250676A priority patent/GB1539426A/en
Priority to DE19762614065 priority patent/DE2614065B2/en
Publication of JPS51115782A publication Critical patent/JPS51115782A/en
Priority to US05/750,587 priority patent/US4100564A/en
Publication of JPS561785B2 publication Critical patent/JPS561785B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE: A darlington connection type transistor fitted to switch major current by high speed.
COPYRIGHT: (C)1976,JPO&Japio
JP50040270A 1975-04-04 1975-04-04 Semiconductor apparatus Granted JPS51115782A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP50040270A JPS51115782A (en) 1975-04-04 1975-04-04 Semiconductor apparatus
GB1250676A GB1539426A (en) 1975-04-04 1976-03-29 Power transistor device
DE19762614065 DE2614065B2 (en) 1975-04-04 1976-04-01 Monolithically integrated Darlington pair
US05/750,587 US4100564A (en) 1975-04-04 1976-12-15 Power transistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50040270A JPS51115782A (en) 1975-04-04 1975-04-04 Semiconductor apparatus

Publications (2)

Publication Number Publication Date
JPS51115782A true JPS51115782A (en) 1976-10-12
JPS561785B2 JPS561785B2 (en) 1981-01-16

Family

ID=12575938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50040270A Granted JPS51115782A (en) 1975-04-04 1975-04-04 Semiconductor apparatus

Country Status (3)

Country Link
JP (1) JPS51115782A (en)
DE (1) DE2614065B2 (en)
GB (1) GB1539426A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1214806B (en) * 1984-09-21 1990-01-18 Ates Componenti Elettron INTEGRATED MONOLITHIC POWER AND SEMICONDUCTOR DEVICE
GB2183907B (en) * 1985-11-27 1989-10-04 Raytheon Co Semiconductor device
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device
CN113474878A (en) * 2018-10-12 2021-10-01 瑟其福耐斯特有限公司 Method of fabricating transistor device

Also Published As

Publication number Publication date
DE2614065A1 (en) 1976-10-14
GB1539426A (en) 1979-01-31
JPS561785B2 (en) 1981-01-16
DE2614065B2 (en) 1978-06-22

Similar Documents

Publication Publication Date Title
JPS5227400A (en) Power source device
JPS51140642A (en) Driving circuit
JPS5210012A (en) Pnpn switch driving circuit
JPS51115782A (en) Semiconductor apparatus
JPS5223251A (en) Semiconductor circuit
JPS51138356A (en) Priority interruption control circuit
JPS525273A (en) Transistor
JPS5336656A (en) Current mirror circuit
JPS5219217A (en) Overcurrent limiting device
JPS5357737A (en) Magnetic control circuit
JPS51130176A (en) Semiconductor device process
JPS524175A (en) Groups iii-v compounds semiconductor device
JPS5270778A (en) Semiconductor device
JPS5227522A (en) Transistor inverter
JPS5276867A (en) Signal holding circuit
JPS527511A (en) Electric vehicle control system
JPS528444A (en) Distance relay device
JPS529384A (en) Transistor circuit device
JPS5240078A (en) Process for production of semiconductor device
JPS51150650A (en) Digital protection relay device
JPS51126119A (en) Envelope producer
JPS51122744A (en) Spark quenching circuit for switch
JPS5230545A (en) Top
JPS5220475A (en) Device for purifying oil
JPS5213929A (en) Bicycling practice device