JPS5211876A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5211876A
JPS5211876A JP50088066A JP8806675A JPS5211876A JP S5211876 A JPS5211876 A JP S5211876A JP 50088066 A JP50088066 A JP 50088066A JP 8806675 A JP8806675 A JP 8806675A JP S5211876 A JPS5211876 A JP S5211876A
Authority
JP
Japan
Prior art keywords
semiconductor device
parasitically
confining
cmos
shall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50088066A
Other languages
Japanese (ja)
Inventor
Kazuo Sato
Mitsuhiko Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50088066A priority Critical patent/JPS5211876A/en
Priority to GB29283/76A priority patent/GB1559583A/en
Priority to DE2632448A priority patent/DE2632448B2/en
Priority to FR7621991A priority patent/FR2318500A1/en
Priority to CH923576A priority patent/CH613071A5/xx
Publication of JPS5211876A publication Critical patent/JPS5211876A/en
Priority to US05/890,029 priority patent/US4167747A/en
Priority to US06/041,764 priority patent/US4302875A/en
Priority to MY313/81A priority patent/MY8100313A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Abstract

PURPOSE:In the CMOS, by confining the operation of the parasitic bipolar Tr, the occurrence of the abnormal current due to the operation of a thyristor circuit constituted parasitically shall be prevented.
JP50088066A 1975-07-18 1975-07-18 Semiconductor device Pending JPS5211876A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP50088066A JPS5211876A (en) 1975-07-18 1975-07-18 Semiconductor device
GB29283/76A GB1559583A (en) 1975-07-18 1976-07-14 Complementary mosfet device and method of manufacturing the same
DE2632448A DE2632448B2 (en) 1975-07-18 1976-07-19 CMOS device
FR7621991A FR2318500A1 (en) 1975-07-18 1976-07-19 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR CIRCUIT AND ITS MANUFACTURING PROCESS
CH923576A CH613071A5 (en) 1975-07-18 1976-07-19
US05/890,029 US4167747A (en) 1975-07-18 1978-03-24 Complementary mosfet device and method of manufacturing the same
US06/041,764 US4302875A (en) 1975-07-18 1979-05-23 Complementary MOSFET device and method of manufacturing the same
MY313/81A MY8100313A (en) 1975-07-18 1981-12-30 A complementary mosfet device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50088066A JPS5211876A (en) 1975-07-18 1975-07-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5211876A true JPS5211876A (en) 1977-01-29

Family

ID=13932467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50088066A Pending JPS5211876A (en) 1975-07-18 1975-07-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5211876A (en)

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