JPS52149953A - Transistor switch circuit - Google Patents

Transistor switch circuit

Info

Publication number
JPS52149953A
JPS52149953A JP6735276A JP6735276A JPS52149953A JP S52149953 A JPS52149953 A JP S52149953A JP 6735276 A JP6735276 A JP 6735276A JP 6735276 A JP6735276 A JP 6735276A JP S52149953 A JPS52149953 A JP S52149953A
Authority
JP
Japan
Prior art keywords
switch circuit
transistor switch
current transformer
power
main current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6735276A
Other languages
Japanese (ja)
Inventor
Masahiro Shigenobu
Shiro Doi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6735276A priority Critical patent/JPS52149953A/en
Publication of JPS52149953A publication Critical patent/JPS52149953A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/601—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:In the main current path of the high-power transistor, the feedback current transformer is provided which has the winding to detect voltage corresponding to main current in case of overcurrent, thereby preventing the current transformer from being saturated, so that the high-power Tr can be protected efficiently.
JP6735276A 1976-06-08 1976-06-08 Transistor switch circuit Pending JPS52149953A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6735276A JPS52149953A (en) 1976-06-08 1976-06-08 Transistor switch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6735276A JPS52149953A (en) 1976-06-08 1976-06-08 Transistor switch circuit

Publications (1)

Publication Number Publication Date
JPS52149953A true JPS52149953A (en) 1977-12-13

Family

ID=13342531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6735276A Pending JPS52149953A (en) 1976-06-08 1976-06-08 Transistor switch circuit

Country Status (1)

Country Link
JP (1) JPS52149953A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02161811A (en) * 1988-12-14 1990-06-21 Omron Tateisi Electron Co Solid state relay

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02161811A (en) * 1988-12-14 1990-06-21 Omron Tateisi Electron Co Solid state relay

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