DE2632036C2 - Integrierte Speicherschaltung mit Feldeffekttransistoren - Google Patents
Integrierte Speicherschaltung mit FeldeffekttransistorenInfo
- Publication number
- DE2632036C2 DE2632036C2 DE2632036A DE2632036A DE2632036C2 DE 2632036 C2 DE2632036 C2 DE 2632036C2 DE 2632036 A DE2632036 A DE 2632036A DE 2632036 A DE2632036 A DE 2632036A DE 2632036 C2 DE2632036 C2 DE 2632036C2
- Authority
- DE
- Germany
- Prior art keywords
- capacitor
- zone
- memory
- gate
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 title claims description 55
- 230000005669 field effect Effects 0.000 title claims description 17
- 239000003990 capacitor Substances 0.000 claims description 64
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000003860 storage Methods 0.000 claims description 20
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 62
- 238000000034 method Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 210000000352 storage cell Anatomy 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/615,262 US3986180A (en) | 1975-09-22 | 1975-09-22 | Depletion mode field effect transistor memory system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2632036A1 DE2632036A1 (de) | 1977-03-31 |
| DE2632036C2 true DE2632036C2 (de) | 1982-09-23 |
Family
ID=24464679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2632036A Expired DE2632036C2 (de) | 1975-09-22 | 1976-07-16 | Integrierte Speicherschaltung mit Feldeffekttransistoren |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3986180A (enExample) |
| JP (2) | JPS5811105B2 (enExample) |
| CA (1) | CA1085053A (enExample) |
| DE (1) | DE2632036C2 (enExample) |
| FR (1) | FR2325149A1 (enExample) |
| GB (1) | GB1505618A (enExample) |
| IT (1) | IT1074052B (enExample) |
| NL (1) | NL7609702A (enExample) |
| SE (1) | SE413819B (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4086662A (en) * | 1975-11-07 | 1978-04-25 | Hitachi, Ltd. | Memory system with read/write control lines |
| US4040016A (en) * | 1976-03-31 | 1977-08-02 | International Business Machines Corporation | Twin nodes capacitance memory |
| US4080590A (en) * | 1976-03-31 | 1978-03-21 | International Business Machines Corporation | Capacitor storage memory |
| GB1579386A (en) * | 1976-07-22 | 1980-11-19 | Tokyo Shibaura Electric Co | Semiconductor memory device and method of manufacturing the same |
| US5808328A (en) * | 1977-02-21 | 1998-09-15 | Zaidan Hojin Handotai Kenkyu Shinkokai | High-speed and high-density semiconductor memory |
| DE2807181C2 (de) * | 1977-02-21 | 1985-11-28 | Zaidan Hojin Handotai Kenkyu Shinkokai, Sendai, Miyagi | Halbleiterspeichervorrichtung |
| DE2726014A1 (de) * | 1977-06-08 | 1978-12-21 | Siemens Ag | Dynamisches speicherelement |
| JPS5447587A (en) * | 1977-09-22 | 1979-04-14 | Handotai Kenkyu Shinkokai | Semiconductor memory |
| JPS6024591B2 (ja) * | 1979-12-06 | 1985-06-13 | セイコーインスツルメンツ株式会社 | 静電誘導トランジスタ読み出し専用記憶装置 |
| US4335450A (en) * | 1980-01-30 | 1982-06-15 | International Business Machines Corporation | Non-destructive read out field effect transistor memory cell system |
| JPS6055919B2 (ja) * | 1980-03-18 | 1985-12-07 | 日本電気株式会社 | 半導体記憶装置 |
| JPS5948477B2 (ja) * | 1980-03-31 | 1984-11-27 | 富士通株式会社 | 半導体記憶装置 |
| JPS5832789B2 (ja) * | 1980-07-18 | 1983-07-15 | 富士通株式会社 | 半導体メモリ |
| US4423490A (en) * | 1980-10-27 | 1983-12-27 | Burroughs Corporation | JFET Dynamic memory |
| US4413330A (en) * | 1981-06-30 | 1983-11-01 | International Business Machines Corporation | Apparatus for the reduction of the short-channel effect in a single-polysilicon, one-device FET dynamic RAM array |
| DE3202028A1 (de) * | 1982-01-22 | 1983-07-28 | Siemens AG, 1000 Berlin und 8000 München | Integrieter dynamischer schreib-lese-speicher |
| US4506351A (en) * | 1982-06-23 | 1985-03-19 | International Business Machines Corporation | One-device random access memory having enhanced sense signal |
| JPS60209996A (ja) * | 1984-03-31 | 1985-10-22 | Toshiba Corp | 半導体記憶装置 |
| KR940002835B1 (ko) * | 1991-04-17 | 1994-04-04 | 재단법인 한국전자통신연구소 | 접합전계형 다이내믹 램을 제조하는 방법 및 그 다이내믹 램의 구조 |
| US5677637A (en) * | 1992-03-25 | 1997-10-14 | Hitachi, Ltd. | Logic device using single electron coulomb blockade techniques |
| GB9226382D0 (en) * | 1992-12-18 | 1993-02-10 | Hitachi Europ Ltd | Memory device |
| JPH08125152A (ja) * | 1994-10-28 | 1996-05-17 | Canon Inc | 半導体装置、それを用いた相関演算装置、ａｄ変換器、ｄａ変換器、信号処理システム |
| JPH09129864A (ja) | 1995-10-30 | 1997-05-16 | Canon Inc | 半導体装置及びそれを用いた半導体回路、相関演算装置、信号処理システム |
| US6180975B1 (en) | 1998-10-30 | 2001-01-30 | International Business Machines Corporation | Depletion strap semiconductor memory device |
| US8035139B2 (en) * | 2007-09-02 | 2011-10-11 | Suvolta, Inc. | Dynamic random access memory having junction field effect transistor cell access device |
| KR101926336B1 (ko) * | 2010-02-05 | 2019-03-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP6552336B2 (ja) * | 2014-08-29 | 2019-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3510689A (en) * | 1966-11-01 | 1970-05-05 | Massachusetts Inst Technology | Bistable flip-flop circuit with memory |
| GB1471617A (en) * | 1973-06-21 | 1977-04-27 | Sony Corp | Circuits comprising a semiconductor device |
| DE2450116C2 (de) * | 1974-10-22 | 1976-09-16 | Siemens AG, 1000 Berlin und 8000 München | Dynamisches Ein-Transistor-Speicherelement für nichtflüchtige Speicher und Verfahren zu seinem Betrieb |
| US3916390A (en) * | 1974-12-31 | 1975-10-28 | Ibm | Dynamic memory with non-volatile back-up mode |
| DE2514582C2 (de) * | 1975-04-03 | 1977-05-26 | Siemens Ag | Schaltung zur erzeugung von leseimpulsen |
| DE2539910C3 (de) * | 1975-09-08 | 1981-02-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiterspeicher |
-
1975
- 1975-09-22 US US05/615,262 patent/US3986180A/en not_active Expired - Lifetime
-
1976
- 1976-07-16 DE DE2632036A patent/DE2632036C2/de not_active Expired
- 1976-08-10 FR FR7625012A patent/FR2325149A1/fr active Granted
- 1976-08-20 JP JP51098827A patent/JPS5811105B2/ja not_active Expired
- 1976-08-25 GB GB35296/76A patent/GB1505618A/en not_active Expired
- 1976-09-01 NL NL7609702A patent/NL7609702A/xx not_active Application Discontinuation
- 1976-09-03 IT IT26823/76A patent/IT1074052B/it active
- 1976-09-14 SE SE7610137A patent/SE413819B/xx unknown
- 1976-09-17 CA CA261,428A patent/CA1085053A/en not_active Expired
-
1981
- 1981-06-05 JP JP8589681A patent/JPS5766594A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| IT1074052B (it) | 1985-04-17 |
| CA1085053A (en) | 1980-09-02 |
| SE413819B (sv) | 1980-06-23 |
| SE7610137L (sv) | 1977-03-23 |
| JPS5766594A (en) | 1982-04-22 |
| FR2325149A1 (fr) | 1977-04-15 |
| FR2325149B1 (enExample) | 1978-06-30 |
| NL7609702A (nl) | 1977-03-24 |
| JPS5811105B2 (ja) | 1983-03-01 |
| DE2632036A1 (de) | 1977-03-31 |
| JPS5738992B2 (enExample) | 1982-08-18 |
| GB1505618A (en) | 1978-03-30 |
| JPS5239387A (en) | 1977-03-26 |
| US3986180A (en) | 1976-10-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8339 | Ceased/non-payment of the annual fee |