NL7609702A - Geheugen bestaand uit veldeffecttransistors en condensatoren. - Google Patents
Geheugen bestaand uit veldeffecttransistors en condensatoren.Info
- Publication number
- NL7609702A NL7609702A NL7609702A NL7609702A NL7609702A NL 7609702 A NL7609702 A NL 7609702A NL 7609702 A NL7609702 A NL 7609702A NL 7609702 A NL7609702 A NL 7609702A NL 7609702 A NL7609702 A NL 7609702A
- Authority
- NL
- Netherlands
- Prior art keywords
- capacitors
- field effect
- effect transistors
- memory consists
- memory
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/615,262 US3986180A (en) | 1975-09-22 | 1975-09-22 | Depletion mode field effect transistor memory system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7609702A true NL7609702A (nl) | 1977-03-24 |
Family
ID=24464679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7609702A NL7609702A (nl) | 1975-09-22 | 1976-09-01 | Geheugen bestaand uit veldeffecttransistors en condensatoren. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3986180A (xx) |
| JP (2) | JPS5811105B2 (xx) |
| CA (1) | CA1085053A (xx) |
| DE (1) | DE2632036C2 (xx) |
| FR (1) | FR2325149A1 (xx) |
| GB (1) | GB1505618A (xx) |
| IT (1) | IT1074052B (xx) |
| NL (1) | NL7609702A (xx) |
| SE (1) | SE413819B (xx) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4086662A (en) * | 1975-11-07 | 1978-04-25 | Hitachi, Ltd. | Memory system with read/write control lines |
| US4080590A (en) * | 1976-03-31 | 1978-03-21 | International Business Machines Corporation | Capacitor storage memory |
| US4040016A (en) * | 1976-03-31 | 1977-08-02 | International Business Machines Corporation | Twin nodes capacitance memory |
| GB1579386A (en) * | 1976-07-22 | 1980-11-19 | Tokyo Shibaura Electric Co | Semiconductor memory device and method of manufacturing the same |
| US5808328A (en) * | 1977-02-21 | 1998-09-15 | Zaidan Hojin Handotai Kenkyu Shinkokai | High-speed and high-density semiconductor memory |
| GB1602361A (en) * | 1977-02-21 | 1981-11-11 | Zaidan Hojin Handotai Kenkyu | Semiconductor memory devices |
| DE2726014A1 (de) * | 1977-06-08 | 1978-12-21 | Siemens Ag | Dynamisches speicherelement |
| JPS5447587A (en) * | 1977-09-22 | 1979-04-14 | Handotai Kenkyu Shinkokai | Semiconductor memory |
| JPS6024591B2 (ja) * | 1979-12-06 | 1985-06-13 | セイコーインスツルメンツ株式会社 | 静電誘導トランジスタ読み出し専用記憶装置 |
| US4335450A (en) * | 1980-01-30 | 1982-06-15 | International Business Machines Corporation | Non-destructive read out field effect transistor memory cell system |
| JPS6055919B2 (ja) * | 1980-03-18 | 1985-12-07 | 日本電気株式会社 | 半導体記憶装置 |
| JPS5948477B2 (ja) * | 1980-03-31 | 1984-11-27 | 富士通株式会社 | 半導体記憶装置 |
| JPS5832789B2 (ja) * | 1980-07-18 | 1983-07-15 | 富士通株式会社 | 半導体メモリ |
| US4423490A (en) * | 1980-10-27 | 1983-12-27 | Burroughs Corporation | JFET Dynamic memory |
| US4413330A (en) * | 1981-06-30 | 1983-11-01 | International Business Machines Corporation | Apparatus for the reduction of the short-channel effect in a single-polysilicon, one-device FET dynamic RAM array |
| DE3202028A1 (de) * | 1982-01-22 | 1983-07-28 | Siemens AG, 1000 Berlin und 8000 München | Integrieter dynamischer schreib-lese-speicher |
| US4506351A (en) * | 1982-06-23 | 1985-03-19 | International Business Machines Corporation | One-device random access memory having enhanced sense signal |
| JPS60209996A (ja) * | 1984-03-31 | 1985-10-22 | Toshiba Corp | 半導体記憶装置 |
| KR940002835B1 (ko) * | 1991-04-17 | 1994-04-04 | 재단법인 한국전자통신연구소 | 접합전계형 다이내믹 램을 제조하는 방법 및 그 다이내믹 램의 구조 |
| GB9226382D0 (en) * | 1992-12-18 | 1993-02-10 | Hitachi Europ Ltd | Memory device |
| US5677637A (en) * | 1992-03-25 | 1997-10-14 | Hitachi, Ltd. | Logic device using single electron coulomb blockade techniques |
| JPH08125152A (ja) * | 1994-10-28 | 1996-05-17 | Canon Inc | 半導体装置、それを用いた相関演算装置、ａｄ変換器、ｄａ変換器、信号処理システム |
| JPH09129864A (ja) | 1995-10-30 | 1997-05-16 | Canon Inc | 半導体装置及びそれを用いた半導体回路、相関演算装置、信号処理システム |
| US6180975B1 (en) | 1998-10-30 | 2001-01-30 | International Business Machines Corporation | Depletion strap semiconductor memory device |
| US8035139B2 (en) * | 2007-09-02 | 2011-10-11 | Suvolta, Inc. | Dynamic random access memory having junction field effect transistor cell access device |
| CN106847816A (zh) * | 2010-02-05 | 2017-06-13 | 株式会社半导体能源研究所 | 半导体装置 |
| JP6552336B2 (ja) * | 2014-08-29 | 2019-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3510689A (en) * | 1966-11-01 | 1970-05-05 | Massachusetts Inst Technology | Bistable flip-flop circuit with memory |
| GB1471617A (en) * | 1973-06-21 | 1977-04-27 | Sony Corp | Circuits comprising a semiconductor device |
| DE2450116C2 (de) * | 1974-10-22 | 1976-09-16 | Siemens AG, 1000 Berlin und 8000 München | Dynamisches Ein-Transistor-Speicherelement für nichtflüchtige Speicher und Verfahren zu seinem Betrieb |
| US3916390A (en) * | 1974-12-31 | 1975-10-28 | Ibm | Dynamic memory with non-volatile back-up mode |
| DE2514582C2 (de) * | 1975-04-03 | 1977-05-26 | Siemens Ag | Schaltung zur erzeugung von leseimpulsen |
| DE2539910C3 (de) * | 1975-09-08 | 1981-02-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiterspeicher |
-
1975
- 1975-09-22 US US05/615,262 patent/US3986180A/en not_active Expired - Lifetime
-
1976
- 1976-07-16 DE DE2632036A patent/DE2632036C2/de not_active Expired
- 1976-08-10 FR FR7625012A patent/FR2325149A1/fr active Granted
- 1976-08-20 JP JP51098827A patent/JPS5811105B2/ja not_active Expired
- 1976-08-25 GB GB35296/76A patent/GB1505618A/en not_active Expired
- 1976-09-01 NL NL7609702A patent/NL7609702A/xx not_active Application Discontinuation
- 1976-09-03 IT IT26823/76A patent/IT1074052B/it active
- 1976-09-14 SE SE7610137A patent/SE413819B/xx unknown
- 1976-09-17 CA CA261,428A patent/CA1085053A/en not_active Expired
-
1981
- 1981-06-05 JP JP8589681A patent/JPS5766594A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2632036C2 (de) | 1982-09-23 |
| SE7610137L (sv) | 1977-03-23 |
| FR2325149B1 (xx) | 1978-06-30 |
| DE2632036A1 (de) | 1977-03-31 |
| FR2325149A1 (fr) | 1977-04-15 |
| GB1505618A (en) | 1978-03-30 |
| CA1085053A (en) | 1980-09-02 |
| US3986180A (en) | 1976-10-12 |
| IT1074052B (it) | 1985-04-17 |
| JPS5239387A (en) | 1977-03-26 |
| SE413819B (sv) | 1980-06-23 |
| JPS5766594A (en) | 1982-04-22 |
| JPS5738992B2 (xx) | 1982-08-18 |
| JPS5811105B2 (ja) | 1983-03-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BV | The patent application has lapsed |