NL7600062A - Komplementaire transistorstruktuur en werkwijze ter vervaardiging daarvan. - Google Patents

Komplementaire transistorstruktuur en werkwijze ter vervaardiging daarvan.

Info

Publication number
NL7600062A
NL7600062A NL7600062A NL7600062A NL7600062A NL 7600062 A NL7600062 A NL 7600062A NL 7600062 A NL7600062 A NL 7600062A NL 7600062 A NL7600062 A NL 7600062A NL 7600062 A NL7600062 A NL 7600062A
Authority
NL
Netherlands
Prior art keywords
manufacture
transistor structure
complementary transistor
complementary
transistor
Prior art date
Application number
NL7600062A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of NL7600062A publication Critical patent/NL7600062A/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826Combination of vertical complementary transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
NL7600062A 1975-01-10 1976-01-06 Komplementaire transistorstruktuur en werkwijze ter vervaardiging daarvan. NL7600062A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7500713A FR2297495A1 (fr) 1975-01-10 1975-01-10 Structure de transistors complementaires et son procede de fabrication

Publications (1)

Publication Number Publication Date
NL7600062A true NL7600062A (nl) 1976-07-13

Family

ID=9149625

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7600062A NL7600062A (nl) 1975-01-10 1976-01-06 Komplementaire transistorstruktuur en werkwijze ter vervaardiging daarvan.

Country Status (8)

Country Link
US (1) US4058825A (nl)
JP (1) JPS561782B2 (nl)
CA (1) CA1046167A (nl)
DE (1) DE2600375C3 (nl)
FR (1) FR2297495A1 (nl)
GB (1) GB1531811A (nl)
IT (1) IT1054024B (nl)
NL (1) NL7600062A (nl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
GB2123207A (en) * 1982-06-30 1984-01-25 Westinghouse Electric Corp Glass passivated high power semiconductor devices
JPS62250661A (ja) * 1986-04-23 1987-10-31 Fuji Electric Co Ltd 半導体装置
GB2277197B (en) * 1993-04-13 1997-08-27 Motorola Inc Voltage protection arrangement
US9478537B2 (en) * 2009-07-15 2016-10-25 Cree, Inc. High-gain wide bandgap darlington transistors and related methods of fabrication
US9761608B1 (en) * 2016-08-15 2017-09-12 International Business Machines Corporation Lateral bipolar junction transistor with multiple base lengths

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624454A (en) * 1969-09-15 1971-11-30 Gen Motors Corp Mesa-type semiconductor device
BE791487A (fr) * 1971-11-18 1973-03-16 Rca Corp Dispositif semiconducteur
US3755722A (en) * 1972-09-28 1973-08-28 Gen Motors Corp Resistor isolation for double mesa transistors
FR2216678B1 (nl) * 1973-02-02 1977-08-19 Radiotechnique Compelec
FR2216677B1 (nl) * 1973-02-02 1977-08-26 Radiotechnique Compelec
US3836997A (en) * 1973-09-26 1974-09-17 Rca Corp Semiconductor darlington circuit
US3836996A (en) * 1973-09-26 1974-09-17 Rca Corp Semiconductor darlington circuit
US3898483A (en) * 1973-10-18 1975-08-05 Fairchild Camera Instr Co Bipolar memory circuit
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation

Also Published As

Publication number Publication date
FR2297495A1 (fr) 1976-08-06
DE2600375A1 (de) 1976-07-15
JPS5193683A (nl) 1976-08-17
GB1531811A (en) 1978-11-08
IT1054024B (it) 1981-11-10
US4058825A (en) 1977-11-15
JPS561782B2 (nl) 1981-01-16
DE2600375B2 (de) 1981-03-12
FR2297495B1 (nl) 1983-07-08
DE2600375C3 (de) 1981-11-26
CA1046167A (en) 1979-01-09

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Legal Events

Date Code Title Description
BC A request for examination has been filed
BI The patent application has been withdrawn