DE2628382A1 - Verfahren zum herstellen von aus aluminiumoxid bestehenden dielektrischen isolationszonen in integrierten schaltungen - Google Patents

Verfahren zum herstellen von aus aluminiumoxid bestehenden dielektrischen isolationszonen in integrierten schaltungen

Info

Publication number
DE2628382A1
DE2628382A1 DE19762628382 DE2628382A DE2628382A1 DE 2628382 A1 DE2628382 A1 DE 2628382A1 DE 19762628382 DE19762628382 DE 19762628382 DE 2628382 A DE2628382 A DE 2628382A DE 2628382 A1 DE2628382 A1 DE 2628382A1
Authority
DE
Germany
Prior art keywords
layer
aluminum
silicon dioxide
depressions
dielectric material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19762628382
Other languages
German (de)
English (en)
Inventor
Michael Robert Poponiak
Robert Otto Schwenker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2628382A1 publication Critical patent/DE2628382A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0142—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations the dielectric materials being chemical transformed from non-dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective

Landscapes

  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
DE19762628382 1975-06-30 1976-06-24 Verfahren zum herstellen von aus aluminiumoxid bestehenden dielektrischen isolationszonen in integrierten schaltungen Withdrawn DE2628382A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/592,150 US4542579A (en) 1975-06-30 1975-06-30 Method for forming aluminum oxide dielectric isolation in integrated circuits

Publications (1)

Publication Number Publication Date
DE2628382A1 true DE2628382A1 (de) 1977-01-27

Family

ID=24369509

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762628382 Withdrawn DE2628382A1 (de) 1975-06-30 1976-06-24 Verfahren zum herstellen von aus aluminiumoxid bestehenden dielektrischen isolationszonen in integrierten schaltungen

Country Status (5)

Country Link
US (1) US4542579A (https=)
JP (1) JPS6025901B2 (https=)
DE (1) DE2628382A1 (https=)
FR (1) FR2316732A1 (https=)
GB (1) GB1487546A (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547245B2 (https=) * 1973-09-07 1979-04-05
JPS5363871A (en) * 1976-11-18 1978-06-07 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS53144813A (en) * 1977-05-24 1978-12-16 Sumitomo Electric Ind Ltd Manufacture of electroconductive aluminum alloy
US4242791A (en) * 1979-09-21 1981-01-06 International Business Machines Corporation High performance bipolar transistors fabricated by post emitter base implantation process
JPS5871640A (ja) * 1981-10-26 1983-04-28 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路の形成方法
JPS5943545A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd 半導体集積回路装置
JPS638608U (https=) * 1986-07-04 1988-01-20
US5378330A (en) * 1993-05-07 1995-01-03 Panasonic Technologies, Inc. Method for polishing micro-sized structures
JP3456790B2 (ja) * 1995-04-18 2003-10-14 三菱電機株式会社 半導体装置の製造方法及び選択エッチング用シリコン基板カセット
US6107201A (en) * 1995-04-28 2000-08-22 Vanguard International Semiconductor Corporation Aluminum spiking inspection method
US6495709B1 (en) 2000-03-16 2002-12-17 Symetrix Corporation Liquid precursors for aluminum oxide and method making same
GB0820629D0 (en) * 2008-11-11 2008-12-17 Univ Bath Biocompatible electrode
US9985345B2 (en) 2015-04-10 2018-05-29 Apple Inc. Methods for electrically isolating areas of a metal body

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
FR1527898A (fr) * 1967-03-16 1968-06-07 Radiotechnique Coprim Rtc Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication
FR1064185A (fr) * 1967-05-23 1954-05-11 Philips Nv Procédé de fabrication d'un système d'électrodes
US3634203A (en) * 1969-07-22 1972-01-11 Texas Instruments Inc Thin film metallization processes for microcircuits
US3723258A (en) * 1970-12-14 1973-03-27 Fairchild Camera Instr Co Use of anodized aluminum as electrical insulation and scratch protection for semiconductor devices
US3671819A (en) * 1971-01-26 1972-06-20 Westinghouse Electric Corp Metal-insulator structures and method for forming
JPS5120265B2 (https=) * 1972-03-23 1976-06-23
JPS5063881A (https=) * 1973-10-08 1975-05-30
US3919060A (en) * 1974-06-14 1975-11-11 Ibm Method of fabricating semiconductor device embodying dielectric isolation
US4005452A (en) * 1974-11-15 1977-01-25 International Telephone And Telegraph Corporation Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby

Also Published As

Publication number Publication date
JPS525287A (en) 1977-01-14
GB1487546A (en) 1977-10-05
JPS6025901B2 (ja) 1985-06-20
US4542579A (en) 1985-09-24
FR2316732A1 (fr) 1977-01-28
FR2316732B1 (https=) 1980-05-09

Similar Documents

Publication Publication Date Title
EP0001100B1 (de) Verfahren zum Herstellen von in Silicium eingelegten dielektrischen Isolationsbereichen mittels geladener und beschleunigter Teilchen
DE2745857C2 (https=)
EP0010624B1 (de) Verfahren zur Ausbildung sehr kleiner Maskenöffnungen für die Herstellung von Halbleiterschaltungsanordnungen
DE1589810C3 (de) Passiviertes Halbleiterbauelement und Verfahren zu seiner Herstellung
DE68922819T2 (de) Ultradichte DRAM-Zelle-Matrix und ihr Herstellungsverfahren.
DE3106202C2 (https=)
DE2646308C3 (de) Verfahren zum Herstellen nahe beieinander liegender elektrisch leitender Schichten
EP0005728B1 (de) Verfahren zum Herstellen eines lateralen PNP- oder NPN-Transistors mit hoher Verstärkung und dadurch hergestellter Transistor
DE3245064C2 (https=)
DE2611158A1 (de) Verfahren zum herstellen von oeffnungen in siliciumkoerpern
DE3242113A1 (de) Verfahren zur herstellung einer duennen dielektrischen isolation in einem siliciumhalbleiterkoerper
DE3014363C2 (https=)
DE3841588A1 (de) Dynamischer vertikal-halbleiterspeicher mit wahlfreiem zugriff und verfahren zu seiner herstellung
DE3834241A1 (de) Halbleitereinrichtung
DE2502235A1 (de) Ladungskopplungs-halbleiteranordnung
EP0001574B1 (de) Halbleiteranordnung für Widerstandsstrukturen in hochintegrierten Schaltkreisen und Verfahren zur Herstellung dieser Halbleiteranordnung
DE2328090C2 (de) Verfahren zur Herstellung eines Halbleiterkondensators
DE2628382A1 (de) Verfahren zum herstellen von aus aluminiumoxid bestehenden dielektrischen isolationszonen in integrierten schaltungen
DE2615438A1 (de) Verfahren zur herstellung von schaltungskomponenten integrierter schaltungen in einem siliziumsubstrat
DE3242736A1 (de) Verfahren zum herstellen feldgesteuerter elemente mit in vertikalen kanaelen versenkten gittern, einschliesslich feldeffekt-transistoren und feldgesteuerten thyristoren
DE2729973C2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE2550346A1 (de) Verfahren zum herstellen eines elektrisch isolierenden bereiches in dem halbleiterkoerper eines halbleiterbauelements
DE2454705A1 (de) Ladungskopplungsanordnung
DE2265257A1 (de) Verfahren zum herstellen von inselartigen einkristallbereichen fuer integrierte halbleiterschaltungen
DE1764378A1 (de) Randschichtdiodenmatrix und Verfahren zu ihrer Herstellung

Legal Events

Date Code Title Description
8141 Disposal/no request for examination