JPS6025901B2 - 集積回路装置の製造方法 - Google Patents

集積回路装置の製造方法

Info

Publication number
JPS6025901B2
JPS6025901B2 JP51054508A JP5450876A JPS6025901B2 JP S6025901 B2 JPS6025901 B2 JP S6025901B2 JP 51054508 A JP51054508 A JP 51054508A JP 5450876 A JP5450876 A JP 5450876A JP S6025901 B2 JPS6025901 B2 JP S6025901B2
Authority
JP
Japan
Prior art keywords
aluminum
layer
substrate
silicon dioxide
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51054508A
Other languages
English (en)
Japanese (ja)
Other versions
JPS525287A (en
Inventor
ミカエル・アール・ポポニアク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS525287A publication Critical patent/JPS525287A/ja
Publication of JPS6025901B2 publication Critical patent/JPS6025901B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0142—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations the dielectric materials being chemical transformed from non-dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective

Landscapes

  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
JP51054508A 1975-06-30 1976-05-14 集積回路装置の製造方法 Expired JPS6025901B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/592,150 US4542579A (en) 1975-06-30 1975-06-30 Method for forming aluminum oxide dielectric isolation in integrated circuits
US592150 2000-06-12

Publications (2)

Publication Number Publication Date
JPS525287A JPS525287A (en) 1977-01-14
JPS6025901B2 true JPS6025901B2 (ja) 1985-06-20

Family

ID=24369509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51054508A Expired JPS6025901B2 (ja) 1975-06-30 1976-05-14 集積回路装置の製造方法

Country Status (5)

Country Link
US (1) US4542579A (https=)
JP (1) JPS6025901B2 (https=)
DE (1) DE2628382A1 (https=)
FR (1) FR2316732A1 (https=)
GB (1) GB1487546A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS638608U (https=) * 1986-07-04 1988-01-20

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547245B2 (https=) * 1973-09-07 1979-04-05
JPS5363871A (en) * 1976-11-18 1978-06-07 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS53144813A (en) * 1977-05-24 1978-12-16 Sumitomo Electric Ind Ltd Manufacture of electroconductive aluminum alloy
US4242791A (en) * 1979-09-21 1981-01-06 International Business Machines Corporation High performance bipolar transistors fabricated by post emitter base implantation process
JPS5871640A (ja) * 1981-10-26 1983-04-28 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路の形成方法
JPS5943545A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd 半導体集積回路装置
US5378330A (en) * 1993-05-07 1995-01-03 Panasonic Technologies, Inc. Method for polishing micro-sized structures
JP3456790B2 (ja) * 1995-04-18 2003-10-14 三菱電機株式会社 半導体装置の製造方法及び選択エッチング用シリコン基板カセット
US6107201A (en) * 1995-04-28 2000-08-22 Vanguard International Semiconductor Corporation Aluminum spiking inspection method
US6495709B1 (en) 2000-03-16 2002-12-17 Symetrix Corporation Liquid precursors for aluminum oxide and method making same
GB0820629D0 (en) * 2008-11-11 2008-12-17 Univ Bath Biocompatible electrode
US9985345B2 (en) 2015-04-10 2018-05-29 Apple Inc. Methods for electrically isolating areas of a metal body

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
FR1527898A (fr) * 1967-03-16 1968-06-07 Radiotechnique Coprim Rtc Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication
FR1064185A (fr) * 1967-05-23 1954-05-11 Philips Nv Procédé de fabrication d'un système d'électrodes
US3634203A (en) * 1969-07-22 1972-01-11 Texas Instruments Inc Thin film metallization processes for microcircuits
US3723258A (en) * 1970-12-14 1973-03-27 Fairchild Camera Instr Co Use of anodized aluminum as electrical insulation and scratch protection for semiconductor devices
US3671819A (en) * 1971-01-26 1972-06-20 Westinghouse Electric Corp Metal-insulator structures and method for forming
JPS5120265B2 (https=) * 1972-03-23 1976-06-23
JPS5063881A (https=) * 1973-10-08 1975-05-30
US3919060A (en) * 1974-06-14 1975-11-11 Ibm Method of fabricating semiconductor device embodying dielectric isolation
US4005452A (en) * 1974-11-15 1977-01-25 International Telephone And Telegraph Corporation Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS638608U (https=) * 1986-07-04 1988-01-20

Also Published As

Publication number Publication date
JPS525287A (en) 1977-01-14
GB1487546A (en) 1977-10-05
DE2628382A1 (de) 1977-01-27
US4542579A (en) 1985-09-24
FR2316732A1 (fr) 1977-01-28
FR2316732B1 (https=) 1980-05-09

Similar Documents

Publication Publication Date Title
EP0098374B1 (en) Isolated dielectric structure for integrated circuits and method for fabricating such structure
JPS6152596B2 (https=)
JPS6025901B2 (ja) 集積回路装置の製造方法
JPH0719838B2 (ja) 半導体装置およびその製造方法
US4661832A (en) Total dielectric isolation for integrated circuits
US4005452A (en) Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby
JP2002299620A (ja) 炭化珪素半導体装置の製造方法
JPH01287942A (ja) 多孔性歪み層を有する半導体構造とｓｏｉ半導体構造の製造方法
EP0231274B1 (en) Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices
EP0095328B1 (en) Method for manufacturing semiconductor device by controlling thickness of insulating film at peripheral portion of element formation region
JPH08195433A (ja) 半導体装置及びその製造方法
US4343078A (en) IGFET Forming method
JPS62108539A (ja) Ｓｏｉ構造半導体装置の製造方法
JPS6010718A (ja) 半導体装置の製造方法
JP2904545B2 (ja) 高耐圧プレーナ型半導体素子およびその製造方法
US4036706A (en) Method for providing electrical isolation between spaced portions of a layer of semiconductive material and the product produced thereby
JPS5834943A (ja) 半導体装置の製造方法
JPH11289082A (ja) 半導体装置及び半導体装置の製造方法
JPH01144648A (ja) 半導体装置
JPH0234930A (ja) 半導体装置の製造方法
JPS5942979B2 (ja) 半導体装置の製造方法
KR100226483B1 (ko) 반도체장치의 소자분리방법
JPH081927B2 (ja) 半導体装置の基板構造の製造方法
JPH0653310A (ja) 半導体装置およびその製造方法
JPH0629533A (ja) 半導体装置および、その製造方法