FR2316732A1 - Procede pour former des regions dielectriquement isolees dans un substrat semi-conducteur - Google Patents

Procede pour former des regions dielectriquement isolees dans un substrat semi-conducteur

Info

Publication number
FR2316732A1
FR2316732A1 FR7616133A FR7616133A FR2316732A1 FR 2316732 A1 FR2316732 A1 FR 2316732A1 FR 7616133 A FR7616133 A FR 7616133A FR 7616133 A FR7616133 A FR 7616133A FR 2316732 A1 FR2316732 A1 FR 2316732A1
Authority
FR
France
Prior art keywords
semiconductor substrate
isolated regions
dielectrically isolated
forming dielectrically
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7616133A
Other languages
English (en)
French (fr)
Other versions
FR2316732B1 (https=
Inventor
Michael R Poponiak
Robert O Schwenker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2316732A1 publication Critical patent/FR2316732A1/fr
Application granted granted Critical
Publication of FR2316732B1 publication Critical patent/FR2316732B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0142—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations the dielectric materials being chemical transformed from non-dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
FR7616133A 1975-06-30 1976-05-21 Procede pour former des regions dielectriquement isolees dans un substrat semi-conducteur Granted FR2316732A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/592,150 US4542579A (en) 1975-06-30 1975-06-30 Method for forming aluminum oxide dielectric isolation in integrated circuits

Publications (2)

Publication Number Publication Date
FR2316732A1 true FR2316732A1 (fr) 1977-01-28
FR2316732B1 FR2316732B1 (https=) 1980-05-09

Family

ID=24369509

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7616133A Granted FR2316732A1 (fr) 1975-06-30 1976-05-21 Procede pour former des regions dielectriquement isolees dans un substrat semi-conducteur

Country Status (5)

Country Link
US (1) US4542579A (https=)
JP (1) JPS6025901B2 (https=)
DE (1) DE2628382A1 (https=)
FR (1) FR2316732A1 (https=)
GB (1) GB1487546A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0025854A1 (de) * 1979-09-21 1981-04-01 International Business Machines Corporation Verfahren zum Herstellen von bipolaren Transistoren

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547245B2 (https=) * 1973-09-07 1979-04-05
JPS5363871A (en) * 1976-11-18 1978-06-07 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS53144813A (en) * 1977-05-24 1978-12-16 Sumitomo Electric Ind Ltd Manufacture of electroconductive aluminum alloy
JPS5871640A (ja) * 1981-10-26 1983-04-28 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路の形成方法
JPS5943545A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd 半導体集積回路装置
JPS638608U (https=) * 1986-07-04 1988-01-20
US5378330A (en) * 1993-05-07 1995-01-03 Panasonic Technologies, Inc. Method for polishing micro-sized structures
JP3456790B2 (ja) * 1995-04-18 2003-10-14 三菱電機株式会社 半導体装置の製造方法及び選択エッチング用シリコン基板カセット
US6107201A (en) * 1995-04-28 2000-08-22 Vanguard International Semiconductor Corporation Aluminum spiking inspection method
US6495709B1 (en) 2000-03-16 2002-12-17 Symetrix Corporation Liquid precursors for aluminum oxide and method making same
GB0820629D0 (en) * 2008-11-11 2008-12-17 Univ Bath Biocompatible electrode
US9985345B2 (en) 2015-04-10 2018-05-29 Apple Inc. Methods for electrically isolating areas of a metal body

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
FR1527898A (fr) * 1967-03-16 1968-06-07 Radiotechnique Coprim Rtc Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication
FR1064185A (fr) * 1967-05-23 1954-05-11 Philips Nv Procédé de fabrication d'un système d'électrodes
US3634203A (en) * 1969-07-22 1972-01-11 Texas Instruments Inc Thin film metallization processes for microcircuits
US3723258A (en) * 1970-12-14 1973-03-27 Fairchild Camera Instr Co Use of anodized aluminum as electrical insulation and scratch protection for semiconductor devices
US3671819A (en) * 1971-01-26 1972-06-20 Westinghouse Electric Corp Metal-insulator structures and method for forming
JPS5120265B2 (https=) * 1972-03-23 1976-06-23
JPS5063881A (https=) * 1973-10-08 1975-05-30
US3919060A (en) * 1974-06-14 1975-11-11 Ibm Method of fabricating semiconductor device embodying dielectric isolation
US4005452A (en) * 1974-11-15 1977-01-25 International Telephone And Telegraph Corporation Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0025854A1 (de) * 1979-09-21 1981-04-01 International Business Machines Corporation Verfahren zum Herstellen von bipolaren Transistoren

Also Published As

Publication number Publication date
JPS525287A (en) 1977-01-14
GB1487546A (en) 1977-10-05
DE2628382A1 (de) 1977-01-27
JPS6025901B2 (ja) 1985-06-20
US4542579A (en) 1985-09-24
FR2316732B1 (https=) 1980-05-09

Similar Documents

Publication Publication Date Title
BE850180A (fr) Procede pour sucrer une substance
FR2328288A1 (fr) Perfectionnements au procede pour fabriquer des dispositifs electroniques
FR2299895A1 (fr) Procede pour la
FR2298959A1 (fr) Procede pour la pro
BE839972A (fr) Procede pour la fabrication d&#39;un dispositif semiconducteur
FR2315170A1 (fr) Procede de fabrication de dispositifs mos complementaires sur substrat de saphir
BE810777A (fr) Procede pour la fabrication de circuits imprimes sur les deux faces d &#39;un substrat en matiere ceramique
FR2316732A1 (fr) Procede pour former des regions dielectriquement isolees dans un substrat semi-conducteur
BE814300A (fr) Procede pour interconnecter des elements de circuit integre
FR2303315A1 (fr) Procede pour aligner un masque et une pastille semiconductrice
BE805951A (fr) Procede pour realiser des structures fines de voies conductrices sur un substrat en ceramique
FR2301922A1 (fr) Procede pour fabriquer un transistor commande en inverse
FR2329344A1 (fr) Procede de croissance de monocristaux semiconducteurs
BE813023A (fr) Procede de fabrication de substrats en ceramique pour des circuits a couches minces
BE785287A (fr) Procede de fabrication des conducteurs-poutres pour dispositifssemiconducteurs
CA1001535A (en) Process for etching silicon wafers
FR2297574A1 (fr) Procede de fabrication de sucreries
FR2312116A1 (fr) Procede pour fabriquer des composants a semi-conducteurs
FR2286579A1 (fr) Procede pour fabriquer des microcablages pour la realisation de contacts sur des circuits a semi-conducteurs
JPS5222878A (en) Process for silicon semiconductor devices
FR2330147A1 (fr) Procede pour fabriquer un dispositif a semi-conducteurs
BE783938A (fr) Procede pour eliminer les proeminences sur une surface de semi-conducteur
FR2298189A1 (fr) Procede pour fabriquer des dispositifs semicon
IT1012363B (it) Procedimento perfezionato per formare pellicole di biossido di silicio su substrati di silicio
FR2333347A1 (fr) Procede de fabrication de dispositifs semiconducteurs pour fusion de zone a gradient de temperature

Legal Events

Date Code Title Description
ST Notification of lapse