DE2626738C2 - Verfahren zur Bildung versenkter dielektrischer Isolationszonen bei monolithisch integrierten Halbleiterschaltungen - Google Patents

Verfahren zur Bildung versenkter dielektrischer Isolationszonen bei monolithisch integrierten Halbleiterschaltungen

Info

Publication number
DE2626738C2
DE2626738C2 DE2626738A DE2626738A DE2626738C2 DE 2626738 C2 DE2626738 C2 DE 2626738C2 DE 2626738 A DE2626738 A DE 2626738A DE 2626738 A DE2626738 A DE 2626738A DE 2626738 C2 DE2626738 C2 DE 2626738C2
Authority
DE
Germany
Prior art keywords
silicon
layer
nitride
silicon nitride
areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2626738A
Other languages
German (de)
English (en)
Other versions
DE2626738A1 (de
Inventor
Bai-Cwo Wappingers Falls N.Y. Feng
George Cheng-Cwo Puoghkeepsie N.Y. Feng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2626738A1 publication Critical patent/DE2626738A1/de
Application granted granted Critical
Publication of DE2626738C2 publication Critical patent/DE2626738C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/143—Shadow masking

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
DE2626738A 1975-06-30 1976-06-15 Verfahren zur Bildung versenkter dielektrischer Isolationszonen bei monolithisch integrierten Halbleiterschaltungen Expired DE2626738C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/592,014 US3966514A (en) 1975-06-30 1975-06-30 Method for forming dielectric isolation combining dielectric deposition and thermal oxidation

Publications (2)

Publication Number Publication Date
DE2626738A1 DE2626738A1 (de) 1977-01-20
DE2626738C2 true DE2626738C2 (de) 1982-05-27

Family

ID=24368919

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2626738A Expired DE2626738C2 (de) 1975-06-30 1976-06-15 Verfahren zur Bildung versenkter dielektrischer Isolationszonen bei monolithisch integrierten Halbleiterschaltungen

Country Status (7)

Country Link
US (1) US3966514A (enExample)
JP (1) JPS525289A (enExample)
CA (1) CA1041227A (enExample)
DE (1) DE2626738C2 (enExample)
FR (1) FR2316733A1 (enExample)
GB (1) GB1487547A (enExample)
IT (1) IT1063554B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3402825A1 (de) * 1983-01-31 1984-08-02 Hitachi, Ltd., Tokio/Tokyo Halbleiteranordnung mit isolationsnut und herstellungsverfahren

Families Citing this family (22)

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Publication number Priority date Publication date Assignee Title
US4038110A (en) * 1974-06-17 1977-07-26 Ibm Corporation Planarization of integrated circuit surfaces through selective photoresist masking
DE2529598C3 (de) * 1975-07-02 1978-05-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer monolithisch integrierten Halbleiterschaltung mit bipolaren Transistoren
CA1090006A (en) * 1976-12-27 1980-11-18 Wolfgang M. Feist Semiconductor structures and methods for manufacturing such structures
US4149915A (en) * 1978-01-27 1979-04-17 International Business Machines Corporation Process for producing defect-free semiconductor devices having overlapping high conductivity impurity regions
JPS54115085A (en) * 1978-02-28 1979-09-07 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating semiconductor
US4271583A (en) * 1980-03-10 1981-06-09 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor devices having planar recessed oxide isolation region
US4318759A (en) * 1980-07-21 1982-03-09 Data General Corporation Retro-etch process for integrated circuits
EP0052948A1 (en) * 1980-11-24 1982-06-02 Motorola, Inc. Oxide isolation process
DE3170644D1 (en) * 1980-11-29 1985-06-27 Toshiba Kk Method of filling a groove in a semiconductor substrate
US4506435A (en) * 1981-07-27 1985-03-26 International Business Machines Corporation Method for forming recessed isolated regions
US4454646A (en) * 1981-08-27 1984-06-19 International Business Machines Corporation Isolation for high density integrated circuits
US4454647A (en) * 1981-08-27 1984-06-19 International Business Machines Corporation Isolation for high density integrated circuits
JPS5970964U (ja) * 1982-11-05 1984-05-14 三菱自動車工業株式会社 Ｏ−リングの固定構造
US4561172A (en) * 1984-06-15 1985-12-31 Texas Instruments Incorporated Integrated circuit fabrication method utilizing selective etching and oxidation to form isolation regions
US4538343A (en) * 1984-06-15 1985-09-03 Texas Instruments Incorporated Channel stop isolation technology utilizing two-step etching and selective oxidation with sidewall masking
US4749662A (en) * 1984-12-14 1988-06-07 Rockwell International Corporation Diffused field CMOS-bulk process
US4631219A (en) * 1985-01-31 1986-12-23 International Business Machines Corporation Growth of bird's beak free semi-rox
JPS6281727A (ja) * 1985-10-05 1987-04-15 Fujitsu Ltd 埋込型素子分離溝の形成方法
JPS63234548A (ja) * 1987-03-24 1988-09-29 Oki Electric Ind Co Ltd 半導体素子の製造方法
US4814290A (en) * 1987-10-30 1989-03-21 International Business Machines Corporation Method for providing increased dopant concentration in selected regions of semiconductor devices
US4948456A (en) * 1989-06-09 1990-08-14 Delco Electronics Corporation Confined lateral selective epitaxial growth
KR102434436B1 (ko) * 2017-05-31 2022-08-19 삼성전자주식회사 집적회로 소자 및 그 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH516871A (it) * 1969-07-30 1971-12-15 Soc Gen Semiconduttori Spa Procedimento per ottenere dispositivi a semiconduttore con minimi dislivelli in superficie, e dispositivo a semiconduttore ottenuto mediante detto procedimento
US3681153A (en) * 1970-01-05 1972-08-01 Motorola Inc Process for fabricating small geometry high frequency semiconductor device
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
NL173110C (nl) * 1971-03-17 1983-12-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht.
US3793090A (en) * 1972-11-21 1974-02-19 Ibm Method for stabilizing fet devices having silicon gates and composite nitride-oxide gate dielectrics
GB1437112A (en) * 1973-09-07 1976-05-26 Mullard Ltd Semiconductor device manufacture
US3886000A (en) * 1973-11-05 1975-05-27 Ibm Method for controlling dielectric isolation of a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3402825A1 (de) * 1983-01-31 1984-08-02 Hitachi, Ltd., Tokio/Tokyo Halbleiteranordnung mit isolationsnut und herstellungsverfahren

Also Published As

Publication number Publication date
GB1487547A (en) 1977-10-05
FR2316733A1 (fr) 1977-01-28
JPS5346704B2 (enExample) 1978-12-15
CA1041227A (en) 1978-10-24
JPS525289A (en) 1977-01-14
US3966514A (en) 1976-06-29
IT1063554B (it) 1985-02-11
DE2626738A1 (de) 1977-01-20
FR2316733B1 (enExample) 1979-07-27

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Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8339 Ceased/non-payment of the annual fee