DE2553519A1 - Verfahren zur erzeugung eines bildes - Google Patents
Verfahren zur erzeugung eines bildesInfo
- Publication number
- DE2553519A1 DE2553519A1 DE19752553519 DE2553519A DE2553519A1 DE 2553519 A1 DE2553519 A1 DE 2553519A1 DE 19752553519 DE19752553519 DE 19752553519 DE 2553519 A DE2553519 A DE 2553519A DE 2553519 A1 DE2553519 A1 DE 2553519A1
- Authority
- DE
- Germany
- Prior art keywords
- film
- image
- generating
- electron beams
- materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 11
- 239000000463 material Substances 0.000 claims description 16
- 238000010894 electron beam technology Methods 0.000 claims description 10
- 229920002678 cellulose Polymers 0.000 claims description 5
- 239000001913 cellulose Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 3
- 230000003381 solubilizing effect Effects 0.000 claims description 3
- 239000000020 Nitrocellulose Substances 0.000 claims description 2
- 229920001220 nitrocellulos Polymers 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- UIQGEWJEWJMQSL-UHFFFAOYSA-N 2,2,4,4-tetramethylpentan-3-one Chemical compound CC(C)(C)C(=O)C(C)(C)C UIQGEWJEWJMQSL-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 6
- 229920006254 polymer film Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 3
- FERIUCNNQQJTOY-UHFFFAOYSA-M Butyrate Chemical group CCCC([O-])=O FERIUCNNQQJTOY-UHFFFAOYSA-M 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical group CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920002301 cellulose acetate Polymers 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical group CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- PJGSXYOJTGTZAV-UHFFFAOYSA-N pinacolone Chemical compound CC(=O)C(C)(C)C PJGSXYOJTGTZAV-UHFFFAOYSA-N 0.000 description 1
- -1 poly (olefin sulfones Chemical class 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Polysaccharides And Polysaccharide Derivatives (AREA)
- Graft Or Block Polymers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/534,542 US3985915A (en) | 1974-12-20 | 1974-12-20 | Use of nitrocellulose containing 10.5 to 12% nitrogen as electron beam positive resists |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2553519A1 true DE2553519A1 (de) | 1976-07-01 |
Family
ID=24130514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752553519 Withdrawn DE2553519A1 (de) | 1974-12-20 | 1975-11-28 | Verfahren zur erzeugung eines bildes |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3985915A (enExample) |
| JP (1) | JPS5845693B2 (enExample) |
| DE (1) | DE2553519A1 (enExample) |
| FR (1) | FR2295466A1 (enExample) |
| GB (1) | GB1476289A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3045519A1 (de) * | 1980-12-03 | 1982-06-09 | Franz Dr. 7317 Wendlingen Hasselbach | "maskierungsverfahren hoechster aufloesung fuer lithographische anwendung" |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55106453A (en) * | 1979-02-08 | 1980-08-15 | Inst Opusuchiei I Neoruganichi | Photograph material |
| US4582776A (en) * | 1981-10-09 | 1986-04-15 | Pioneer Electronic Corporation | Information recording disc having light absorbing cellulose nitrate coating |
| JPS61256348A (ja) * | 1985-05-10 | 1986-11-13 | Nec Corp | エネルギ−感応性樹脂 |
| US4837125A (en) * | 1986-03-25 | 1989-06-06 | Siemens Aktiengesellschaft | Electron-beam-sensitive resist material for microstructures in electronics |
| JP2001106785A (ja) * | 1999-08-05 | 2001-04-17 | Canon Inc | 感光性樹脂及び該感光性樹脂を用いたレジスト組成物、該レジスト組成物を用いたパターン形成方法、該パターン形成方法により製造されるデバイス及び該感光性樹脂を有するレジストを用いた露光方法 |
| FR3034881B1 (fr) * | 2015-04-09 | 2017-05-05 | Univ Claude Bernard Lyon | Mise en œuvre de chitosane ou d'alginate en tant que masque de transfert dans des procedes de lithographie et de transfert |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3535137A (en) * | 1967-01-13 | 1970-10-20 | Ibm | Method of fabricating etch resistant masks |
-
1974
- 1974-12-20 US US05/534,542 patent/US3985915A/en not_active Expired - Lifetime
-
1975
- 1975-10-22 FR FR7533276A patent/FR2295466A1/fr active Granted
- 1975-11-05 JP JP50132206A patent/JPS5845693B2/ja not_active Expired
- 1975-11-11 GB GB4648975A patent/GB1476289A/en not_active Expired
- 1975-11-28 DE DE19752553519 patent/DE2553519A1/de not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3045519A1 (de) * | 1980-12-03 | 1982-06-09 | Franz Dr. 7317 Wendlingen Hasselbach | "maskierungsverfahren hoechster aufloesung fuer lithographische anwendung" |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2295466B1 (enExample) | 1981-08-21 |
| FR2295466A1 (fr) | 1976-07-16 |
| JPS5184640A (enExample) | 1976-07-24 |
| US3985915A (en) | 1976-10-12 |
| GB1476289A (en) | 1977-06-10 |
| JPS5845693B2 (ja) | 1983-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2655455C2 (de) | Verfahren zum Herstellen einer Maske und Lackstruktur zur Verwendung bei dem Verfahren | |
| DE2534801C2 (de) | Verfahren zum Herstellen von dotierten Gebieten in einem Halbleiterkörper durch Ionen-Implantation | |
| DE954127C (de) | Verfahren zur Herstellung lichtempfindlicher Platten und aus ihnen Druckplatten | |
| DE1108079B (de) | Vorsensibilisierte, positiv arbeitende Flachdruckfolie | |
| DE2459156C3 (de) | Verfahren zum Herstellen einer Photolackmaske auf einem Halbleitersubstrat | |
| DE2834059A1 (de) | Lichtempfindliches kopiermaterial und verfahren zu seiner herstellung | |
| DE3525901A1 (de) | Mit wasser entwickelbare photopolymerisierbare zusammensetzungen und druckplatten | |
| DE3710210A1 (de) | Bilderzeugendes material | |
| DE3600442A1 (de) | Photopolymerisierbare masse | |
| EP0003804B1 (de) | Photopolymerisierbares Gemisch, das einen Monoazofarbstoff enthält | |
| DE3889415T2 (de) | Photoschablone für Siebdruck. | |
| DE2539690A1 (de) | Verfahren zum entwickeln von resistfilmen | |
| DE2615055B2 (de) | Lichtempfindliches Gemisch | |
| DE2552582A1 (de) | Verfahren zur erzeugung eines bildes | |
| DE2826894C3 (de) | Verfahren zur Oberflächenbehandlung eines Filmschichtträgers | |
| DE69032464T2 (de) | Verfahren zur Herstellung von Photolackmustern | |
| EP0064733B1 (de) | Verfahren zur Herstellung von Reliefkopien | |
| DE1244582B (de) | Verfahren zur Herstellung einer Flachdruckform | |
| DE3382630T2 (de) | Lichtempfindliche elastomere kunststoffzusammensetzung fuer flexographische druckplatten. | |
| DE1104339B (de) | Kopierschicht aus Epoxydharzen fuer Flachdruckplatten | |
| DE2207503A1 (de) | Verfahren zum Aufbringen einer Zwi sehen bzw Haftschicht auf einen photo graphischen Film | |
| DE2452326C2 (de) | Verfahren zur Herstellung einer Ätzmaske mittels energiereicher Strahlung | |
| DE2806928B2 (de) | Strahlungsempfindliches Material und seine Verwendung als Resistmaterial | |
| US3985915A (en) | Use of nitrocellulose containing 10.5 to 12% nitrogen as electron beam positive resists | |
| DE3030816A1 (de) | Lichtempfindliche bildausbildungsmaterialien und bildausbildungsverfahren unter anwendung derselben |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8130 | Withdrawal |